IPB110N20N3LFATMA1

IPB110N20N3LF MOSFET OptiMOSTM3LinearFET,200V D²PAK Features •Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 11 mΩ ID 88 A Ipulse(VDS=56V,tp=10 8.7 ms) A Type/OrderingCode Package IPB110N20N3LF PG-TO 263-3 1) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 110N20LF RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2017-02-16 OptiMOSTM3LinearFET,200V IPB110N20N3LF TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2017-02-16 OptiMOSTM3LinearFET,200V IPB110N20N3LF 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 88 61 11 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=40K/W1) - 352 A TC=25°C - - 560 mJ ID=80A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 250 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse3) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.3 0.5 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm² cooling area1) RthJA - - 40 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2017-02-16 OptiMOSTM3LinearFET,200V IPB110N20N3LF 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.2 4.2 V VDS=VGS,ID=260µA - 1 10 2 100 µA VDS=160V,VGS=0V,Tj=25°C VDS=160V,VGS=0V,Tj=125°C IGSS - 2 -2 5 -5 µA VGS=20V,VDS=0V VGS=-10V,VDS=0V RDS(on) - 9.8 11 mΩ VGS=10V,ID=88A Gate resistance RG - 60 90 Ω - Transconductance gfs 16 31 - S |VDS|>2|ID|RDS(on)max,ID=44A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 200 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance 1) Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 500 650 pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 390 510 pF VGS=0V,VDS=100V,f=1MHz Reverse transfer capacitance Crss - 5 - pF VGS=0V,VDS=100V,f=1MHz Turn-on delay time td(on) - 6 - ns VDD=100V,VGS=10V,ID=44A, RG,ext=1.6Ω Rise time tr - 70 - ns VDD=100V,VGS=10V,ID=44A, RG,ext=1.6Ω Turn-off delay time td(off) - 79 - ns VDD=100V,VGS=10V,ID=44A, RG,ext=1.6Ω Fall time tf - 26 - ns VDD=100V,VGS=10V,ID=44A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 4 - nC VDD=100V,ID=22A,VGS=0to10V Qgd - 51 - nC VDD=100V,ID=22A,VGS=0to10V Gate charge total Qg - 76 - nC VDD=100V,ID=22A,VGS=0to10V Gate plateau voltage Vplateau - 6.8 - V VDD=100V,ID=22A,VGS=0to10V Qoss - 154 - nC VDD=100V,VGS=0V Gate to source charge 1) Gate to drain charge 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2017-02-16 OptiMOSTM3LinearFET,200V IPB110N20N3LF Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 88 A TC=25°C - 352 A TC=25°C - 0.95 1.2 V VGS=0V,IF=88A,Tj=25°C trr - 145 - ns VR=100V,IF=44A,diF/dt=100A/µs Qrr - 770 - nC VR=100V,IF=44A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2017-02-16 OptiMOSTM3LinearFET,200V IPB110N20N3LF 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 300 100 250 80 200 ID[A] Ptot[W] 60 150 40 100 20 50 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 0.5 10 µs 100 µs 0.2 10-1 1 ms DC 0.1 ZthJC[K/W] ID[A] 102 10 ms 1 10 0.05 0.02 10 -2 0.01 single pulse 100 100 101 102 103 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2017-02-16 OptiMOSTM3LinearFET,200V IPB110N20N3LF Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 60 16 14 50 6.5 V 12 40 8V 6V 10 V 30 RDS(on)[mΩ] ID[A] 10 10 V 8 6 5.5 V 20 4 5V 10 2 4.5 V 0 0 1 2 3 4 0 5 0 10 VDS[V] 20 30 40 60 80 ID[A] ID=f(VDS);Tj=25°C,tp=30µs;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 60 50 50 40 40 gfs[S] ID[A] 30 30 20 20 0 10 150 °C 10 25 °C 0 1 2 3 4 5 6 7 0 0 VGS[V] 40 ID[A] ID=f(VGS);VDS=10V;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.1,2017-02-16 OptiMOSTM3LinearFET,200V IPB110N20N3LF Diagram9:Normalizeddrain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 2.5 4 2600 µA 2.0 260 µA 1.5 VGS(th)[V] RDS(on),normalizedto25°C 3 1.0 2 1 0.5 0.0 -80 -40 0 40 80 120 0 -60 160 -20 20 60 Tj[°C] 100 140 180 Tj[°C] RDS(on)=f(Tj),ID=88A,VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Coss 103 102 IF[A] C[pF] Ciss 102 101 101 100 Crss 0 40 80 120 160 100 0.0 0.5 VDS[V] 1.5 2.0 2.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 IF=f(VSD);parameter:Tj 8 Rev.2.1,2017-02-16 OptiMOSTM3LinearFET,200V IPB110N20N3LF Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 25 °C 10 100 °C 8 VGS[V] IAV[A] 100 V 125 °C 101 6 160 V 40 V 4 2 100 100 101 102 103 0 0 20 tAV[µs] 40 60 80 100 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=22Apulsed,resistiveload;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 230 220 VBR(DSS)[V] 210 200 190 180 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2017-02-16 OptiMOSTM3LinearFET,200V IPB110N20N3LF 5PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2017-02-16 OptiMOSTM3LinearFET,200V IPB110N20N3LF RevisionHistory IPB110N20N3LF Revision:2017-02-16,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-12-15 Release of final version 2.1 2017-02-16 Update technology heading TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2017-02-16