IPB110P06LM

IPB110P06LM MOSFET OptiMOSTMPowerTransistor,-60V D²PAK Features tab •P-Channel •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •LogicLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 1 3 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain tab Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 11 mΩ ID -100 A Type/OrderingCode Package IPB110P06LM PG-TO 263-3 Final Data Sheet Gate Pin 1 Source Pin 3 Marking 110P06LM 1 RelatedLinks - Rev.2.0,2019-04-01 OptiMOSTMPowerTransistor,-60V IPB110P06LM TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2019-04-01 OptiMOSTMPowerTransistor,-60V IPB110P06LM 1Maximumratings atTC=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition -100 -78 -91 -65 A VGS=-10V,TC=25°C VGS=-10V,TC=100°C VGS=-4.5V,TC=25°C VGS=-4.5V,TC=100°C - -400 A TC=25°C - - 1616 mJ ID=-100A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 300 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm² cooling area3) Values Min. Typ. Max. RthJC - - 0.5 °C/W - RthJA - - 62 °C/W - 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2019-04-01 OptiMOSTMPowerTransistor,-60V IPB110P06LM 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=-250µA -1.5 -2 V VDS=VGS,ID=-5550µA - -0.1 -10 -1 -100 µA VDS=-60V,VGS=0V,Tj=25°C VDS=-60V,VGS=0V,Tj=125°C IGSS - -10 -100 nA VGS=-20V,VDS=0V Drain-source on-state resistance RDS(on) - 9 11 11 16 mΩ VGS=-10V,ID=-100A VGS=-4.5V,ID=-91A Gate resistance RG - 5 - Ω - Transconductance gfs - 100 - S |VDS|≥2|ID|RDS(on)max,ID=-50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS -60 - Gate threshold voltage VGS(th) -1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 8500 - pF VGS=0V,VDS=-30V,f=1MHz Output capacitance Coss - 1200 - pF VGS=0V,VDS=-30V,f=1MHz Reverse transfer capacitance Crss - 260 - pF VGS=0V,VDS=-30V,f=1MHz Turn-on delay time td(on) - 22 - ns VDD=-30V,VGS=-10V,ID=-50A, RG,ext=1.6Ω Rise time tr - 33 - ns VDD=-30V,VGS=-10V,ID=-50A, RG,ext=1.6Ω Turn-off delay time td(off) - 277 - ns VDD=-30V,VGS=-10V,ID=-50A, RG,ext=1.6Ω Fall time tf - 74 - ns VDD=-30V,VGS=-10V,ID=-50A, RG,ext=1.6Ω Final Data Sheet 4 Rev.2.0,2019-04-01 OptiMOSTMPowerTransistor,-60V IPB110P06LM Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=-30V,ID=-100A, VGS=0to-10V -13 - nC VDD=-30V,ID=-100A, VGS=0to-10V - -76 - nC VDD=-30V,ID=-100A, VGS=0to-10V Qsw - -92 - nC VDD=-30V,ID=-100A, VGS=0to-10V Gate charge total Qg - -281 - nC VDD=-30V,ID=-100A, VGS=0to-10V Gate plateau voltage Vplateau - -3.5 - V VDD=-30V,ID=-100A, VGS=0to-10V Output charge Qoss - -88 - nC VDS=-30V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - -30 Gate charge at threshold Qg(th) - Gate to drain charge Qgd Switching charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - -100 A TC=25°C Diode pulse current IS,pulse - - -400 A TC=25°C Diode forward voltage VSD - -0.9 -1.2 V VGS=0V,IF=-100A,Tj=25°C Reverse recovery time trr - 88 - ns VR=-30V,IF=-100A, diF/dt=-100A/µs Reverse recovery charge Qrr - -324 - nC VR=-30V,IF=-100A, diF/dt=-100A/µs 1) See diagram ,Gate charge waveforms, for gate charge parameter definition Final Data Sheet 5 Rev.2.0,2019-04-01 OptiMOSTMPowerTransistor,-60V IPB110P06LM 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 320 120 280 100 240 80 -ID[A] Ptot[W] 200 160 60 120 40 80 20 40 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);|VGS|≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 100 µs 0.5 2 10 10-1 1 ms 1 10 DC 10-1 0.05 10 -2 0.02 0.01 single pulse 100 10-1 0.2 0.1 ZthJC[K/W] -ID[A] 10 ms 100 101 102 10-3 10-5 10-4 -VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2019-04-01 OptiMOSTMPowerTransistor,-60V IPB110P06LM Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 350 25 -10 V 300 -5 V -4.5 V 20 250 -3.5 V 200 -ID[A] -4 V 150 RDS(on)[mΩ] -2.8 V -4 V -3 V 15 -4.5 V -5 V -3.5 V 100 -10 V 10 50 -3 V -2.8 V 0 0 1 2 3 4 5 5 0 25 50 75 100 -VDS[V] 125 150 175 200 -ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 150 28 24 125 175 °C 20 RDS(on)[mΩ] -ID[A] 100 75 16 12 50 25 °C 8 25 4 175 °C 25 °C 0 1 2 3 4 -VGS[V] 4 5 6 7 8 9 10 -VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=-100A;parameter:Tj 7 Rev.2.0,2019-04-01 OptiMOSTMPowerTransistor,-60V IPB110P06LM Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.4 2.00 1.75 1.6 1.50 -VGS(th)[V] RDS(on)(normalizedto25°C) 2.0 1.2 1.25 -55500 µA 0.8 1.00 0.4 -5550 µA 0.0 -80 -40 0 40 80 120 160 0.75 -80 200 -40 0 Tj[°C] 40 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=-100A,VGS=-10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 °C 25 °C, max 175 °C 175 °C, max 104 102 -IF[A] C[pF] Ciss 103 101 Coss Crss 102 0 10 20 30 40 50 60 100 0.00 0.50 -VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.00 1.50 2.00 -VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2019-04-01 OptiMOSTMPowerTransistor,-60V IPB110P06LM Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 -12 V -30 V -48 V 8 102 25 °C 100 °C -VGS[V] -IAV[A] 6 4 1 10 150 °C 2 100 100 101 102 103 tAV[µs] 0 0 40 80 120 160 200 240 280 -Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=-100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 71 69 67 -VBR(DSS)[V] 65 63 61 59 57 55 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=-250µA Final Data Sheet 9 Rev.2.0,2019-04-01 OptiMOSTMPowerTransistor,-60V IPB110P06LM 5PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2019-04-01 OptiMOSTMPowerTransistor,-60V IPB110P06LM RevisionHistory IPB110P06LM Revision:2019-04-01,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-04-01 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2019-04-01