IPB120N04S4L02ATMA1

Data Sheet OptiMOSTM-T2 Power-Transistor IPB120N04S4L-02 Product Summary VDS 40 V RDS(on),max 1.7 mΩ ID 120 A Features PG-TO263-3-2 • N-channel Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB120N04S4L-02 PG-TO263-3- 4N04L02 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25°C, V GS=10V 120 T C=100°C, V GS=10V2) 120 Unit A Pulsed drain current2) I D,pulse T C=25°C 480 Avalanche energy, single pulse2) E AS I D=60A 480 mJ Avalanche current, single pulse I AS - 120 A Gate source voltage V GS - +20/-16 V Power dissipation P tot T C=25°C 158 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2013-06-03 Data Sheet Parameter Symbol IPB120N04S4L-02 Values Conditions Unit min. typ. max. - - 0.95 40 - - 1.2 1.7 2.2 - 0.05 1 - 1 20 Thermal characteristics2) Thermal resistance, junction - case R thJC - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA Gate threshold voltage V GS(th) V DS=V GS, I D=110µA Zero gate voltage drain current I DSS V DS=40V, V GS=0V V DS=18V, V GS=0V, T j=85°C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=50A - 1.9 2.3 mΩ V GS=10 V, I D=100 A - 1.4 1.7 Rev. 1.0 page 2 2013-06-03 Data Sheet Parameter Symbol IPB120N04S4L-02 Values Conditions Unit min. typ. max. - 11200 14560 pF - 1900 2470 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 95 220 Turn-on delay time t d(on) - 16 - Rise time tr - 16 - Turn-off delay time t d(off) - 80 - Fall time tf - 70 - Gate to source charge Q gs - 32 42 Gate to drain charge Q gd - 16 37 Gate charge total Qg - 143 190 Gate plateau voltage V plateau - 2.9 - V - - 120 A - - 480 V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=120A, R G=3.5Ω ns Gate Charge Characteristics2) V DD=32V, I D=120A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=100A, T j=25°C - 0.9 1.3 V Reverse recovery time2) t rr V R=20V, I F=50A, di F/dt =100A/µs - 65 - ns Reverse recovery charge2) Q rr - 85 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 0.95K/W the chip is able to carry 290A at 25°C. 2) Defined by design. Not subject to production test. Rev. 1.0 page 3 2013-06-03 Data Sheet IPB120N04S4L-02 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 175 140 150 120 125 100 100 80 ID [A] Ptot [W] 1 Power dissipation 75 60 50 40 25 20 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs 0.5 10 µs 100 µs 10-1 1 ms 10 0.05 0.01 10-2 1 single pulse 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 0.1 ZthJC [K/W] ID [A] 100 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-06-03 Data Sheet IPB120N04S4L-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 11 480 10 V 3.5 V 3V 4.5 V 4V 420 4V 9 360 RDS(on) [mΩ] ID [A] 300 240 3.5 V 180 7 5 120 3 60 3V 4.5 V 10 V 0 0 1 2 3 1 4 0 120 240 VDS [V] 360 480 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 480 3 -55 °C 25 °C 420 175 °C 2.5 360 RDS(on) [mΩ] ID [A] 300 240 180 2 1.5 120 1 60 0 1 2 3 4 5 VGS [V] Rev. 1.0 0.5 -60 -20 20 60 100 140 180 Tj [°C] page 5 2013-06-03 Data Sheet IPB120N04S4L-02 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 2 1.75 1100 µA C [pF] 110 µA 1.25 VGS(th) [V] Ciss 104 1.5 Coss 103 1 0.75 102 0.5 Crss 0.25 101 0 -60 -20 20 60 100 140 0 180 5 10 15 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 1000 102 100 IF [A] IAV [A] 103 175 °C 20 25 °C 101 25 °C 100 °C 10 150 °C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 1 10 100 1000 tAV [µs] page 6 2013-06-03 Data Sheet IPB120N04S4L-02 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 45 1000 30 A 600 41 VBR(DSS) [V] 43 EAS [mJ] 800 60 A 400 120 A 200 39 37 35 0 25 75 125 -55 175 -15 Tj [°C] 25 65 105 145 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 120 A pulsed parameter: V DD 10 V GS 9 Qg 8 7 8V 32 V VGS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw Q gate 1 Q gs 0 0 50 100 Q gd 150 Qgate [nC] Rev. 1.0 page 7 2013-06-03 Data Sheet IPB120N04S4L-02 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2013 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2013-06-03 Data Sheet IPB120N04S4L-02 Revision History Version Date Changes Revision 1.0 Rev. 1.0 03.06.2013 Final Data Sheet page 9 2013-06-03