IPB120N06S4-H1

IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS®-T2 Power-Transistor Product Summary V DS 60 V R DS(on),max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB120N06S4-H1 PG-TO263-3-2 4N06H1 IPI120N06S4-H1 PG-TO262-3-1 4N06H1 IPP120N06S4-H1 PG-TO220-3-1 4N06H1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25°C, V GS=10V 120 T C=100°C, V GS=10V2) 120 Unit A Pulsed drain current2) I D,pulse T C=25°C 480 Avalanche energy, single pulse2) E AS I D=60A 1060 mJ Avalanche current, single pulse I AS - 120 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 250 W Operating and storage temperature T j, T stg - -55 ... +175 °C - 55/175/56 IEC climatic category; DIN IEC 68-1 Rev. 1.0 page 1 2009-03-23 IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.60 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=200µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=60V, V GS=0V, T j=25°C - 0.03 1 - 10 200 V DS=60V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=100A - 2.1 2.4 mΩ V GS=10V, I D=100A, SMD version - 1.8 2.1 Rev. 1.0 page 2 2009-03-23 IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 Parameter Symbol Values Conditions Unit min. typ. max. - 16840 21900 pF - 4120 5360 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 160 320 Turn-on delay time t d(on) - 30 - Rise time tr - 5 - Turn-off delay time t d(off) - 60 - Fall time tf - 15 - Gate to source charge Q gs - 84 110 Gate to drain charge Q gd - 22.5 45 Gate charge total Qg - 208 270 Gate plateau voltage V plateau - 5.0 - V - - 120 A - - 480 V GS=0V, V DS=25V, f =1MHz V DD=30V, V GS=10V, I D=120A, R G=3.5Ω ns Gate Charge Characteristics2) V DD=48V, I D=120A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=100A, T j=25°C 0.6 0.95 1.3 V Reverse recovery time2) t rr V R=30V, I F=120A, di F/dt =100A/µs - 60 - ns Reverse recovery charge2) Q rr - 90 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 0.6K/W the chip is able to carry 261A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-23 IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V; SMD 300 140 120 250 100 200 I D [A] P tot [W] 80 150 60 100 40 50 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 100 0.5 I D [A] Z thJC [K/W] 100 µs 1 ms 10-1 0.1 0.05 10 10-2 0.01 single pulse 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2009-03-23 IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 480 10 10 V 5V 8V 420 6V 9 7V 6V 8 360 7 R DS(on) [mΩ] I D [A] 300 240 5V 180 6 5 4 120 3 60 7V 8V 2 10 V 0 1 0 1 2 3 4 5 6 0 60 120 180 V DS [V] 240 300 360 420 480 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD parameter: T j 3.5 480 -55 °C 25 °C 175 °C 420 3 360 R DS(on) [mΩ] I D [A] 300 240 180 2.5 2 120 1.5 60 0 3 4 5 6 7 V GS [V] Rev. 1.0 1 -60 -20 20 60 100 140 180 T j [°C] page 5 2009-03-23 IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 Ciss 4 10 V GS(th) [V] 3 C [pF] 2000 µA Coss 200 µA 103 2.5 2 102 Crss 1.5 101 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 103 1000 102 100 25 °C I AV [A] I F [A] 175 °C 25 °C 101 150 °C 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 100 °C 0.1 1 10 100 1000 t AV [µs] page 6 2009-03-23 IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); I D = 60 A V BR(DSS) = f(T j); I D = 1 mA 66 1200 1000 64 V BR(DSS) [V] E AS [mJ] 800 600 62 60 400 58 200 56 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 120 A pulsed parameter: V DD 10 V GS 9 12 V Qg 48 V 8 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 40 80 120 160 200 Q gate Q gd 240 Q gate [nC] Rev. 1.0 page 7 2009-03-23 IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2009 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2009-03-23 IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 Revision History Version Date Changes Revision 1.0 Rev. 1.0 23.03.2009 Final data sheet page 9 2009-03-23