IPB140N08S404ATMA1

IPB140N08S4-04 OptiMOS™-T2 Power-Transistor Product Summary V DS 80 V R DS(on),max 4.2 mW ID 140 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB140N08S4-04 PG-TO263-7-3 4N0804 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V 140 T C=100°C, V GS=10V2) 100 Unit A Pulsed drain current1) I D,pulse T C=25°C 560 Avalanche energy, single pulse1) E AS I D=70A 212 mJ Avalanche current, single pulse I AS - 87 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 161 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2014-06-20 IPB140N08S4-04 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 0.9 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=100µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=80V, V GS=0V, T j=25°C - 0.03 1 T j=125°C2) - 10 200 V DS=80V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=100A - 3.5 4.2 mW Rev. 1.0 page 2 2014-06-20 IPB140N08S4-04 Parameter Symbol Values Conditions Unit min. typ. max. - 4140 5500 - 1600 2130 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 84 170 Turn-on delay time t d(on) - 18 - Rise time tr - 10 - Turn-off delay time t d(off) - 28 - Fall time tf - 35 - Gate to source charge Q gs - 22 29 Gate to drain charge Q gd - 13 26 Gate charge total Qg - 60 80 Gate plateau voltage V plateau - 5.4 - V - - 140 A - - 560 V GS=0V, V DS=25V, f =1MHz V DD=40V, V GS=10V, I D=140A, R G=3.5W pF ns Gate Charge Characteristics1) V DD=64V, I D=140A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=100A, T j=25°C - 0.9 1.3 V Reverse recovery time1) t rr V R=40V, I F=50A, di F/dt =100A/µs - 60 - ns Reverse recovery charge1) Q rr - 100 - nC 1) T C=25°C Specified by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2014-06-20 IPB140N08S4-04 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS = 10 V 175 160 150 120 100 I D [A] P tot [W] 125 80 75 50 40 25 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 101 1000 1 µs 10 µs 100 100 µs 100 0.5 I D [A] Z thJC [K/W] 1 ms 0.1 10-1 0.05 10 0.01 -2 10 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 -3 t 10 p [s] 10-2 10-1 100 V DS [V] Rev. 1.0 page 4 2014-06-20 IPB140N08S4-04 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 560 7 10 V 5.5 V 6V 7V 6.5 V 8V 480 7V 6 400 I D [A] R DS(on) [mW] 6.5 V 320 240 6V 5 160 5.5 V 4 10 V 80 0 3 0 1 2 3 4 5 0 140 280 V DS [V] 420 560 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 560 8 -55 °C 7 420 25 °C 175 °C 280 R DS(on) [mW] I D [A] 6 5 4 140 3 0 3 4 5 6 7 -60 -20 20 60 100 140 180 T j [°C] V GS [V] Rev. 1.0 2 page 5 2014-06-20 IPB140N08S4-04 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 C [pF] V GS(th) [V] 104 3 Ciss Coss 1000 µA 103 2.5 100 µA Crss 2 10 2 101 1.5 -60 -20 20 60 100 140 0 180 20 40 T j [°C] 60 80 100 1000 V DS [V] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 I AV [A] I F [A] 25 °C 175 °C 25 °C 101 150 °C 10 100 1 0 0.4 0.8 1.2 1.6 V SD [V] Rev. 1.0 100 °C 0.1 1 10 t AV [µs] page 6 2014-06-20 IPB140N08S4-04 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 88 1000 900 86 800 84 22 A 700 82 V BR(DSS) [V] E AS [mJ] 600 500 400 80 78 44 A 300 76 200 87 A 74 100 72 0 25 75 125 -55 175 -15 25 65 105 145 185 T j [°C] T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 140 A pulsed parameter: V DD 10 V GS 9 Qg 16 V 64 V 8 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 20 40 60 Q gate Q gd 80 Q gate [nC] Rev. 1.0 page 7 2014-06-20 IPB140N08S4-04 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-06-20 IPB140N08S4-04 Revision History Version Date Changes Revision 1.0 Rev. 1.0 20.06.2014 Final data sheet page 9 2014-06-20