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IPB14N03LA

IPB14N03LA

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SOT404

  • 描述:

    MOSFET N-CH 25V 30A D2PAK

  • 数据手册
  • 价格&库存
IPB14N03LA 数据手册
IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS®2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS(on),max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 • 175 °C operating temperature • dv /dt rated Type Package Ordering Code Marking IPB14N03LA P-TO263-3-2 Q67042-S4156 14N03LA IPI14N03LA P-TO262-3-1 Q67042-S4157 14N03LA IPP14N03LA P-TO220-3-1 Q67042-S4158 14N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C1) 30 T C=100 °C 30 Unit A Pulsed drain current I D,pulse T C=25 °C2) 210 Avalanche energy, single pulse E AS I D=24 A, R GS=25 Ω 60 mJ Reverse diode dv /dt dv /dt I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage3) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.3 ±20 V 46 W -55 ... 175 °C 55/175/56 page 1 2003-12-18 IPB14N03LA IPI14N03LA, IPP14N03LA Parameter Values Symbol Conditions Unit min. typ. max. - - 3.2 minimal footprint - - 62 6 cm2 cooling area4) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 25 - - Gate threshold voltage V GS(th) V DS=V GS, I D=20 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=25 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=20 A - 18.5 23.1 mΩ V GS=4.5 V, I D=20 A, SMD version - 18.2 22.7 V GS=10 V, I D=30 A - 11.6 13.9 V GS=10 V, I D=30 A, SMD version - 11.3 13.6 - 0.9 - Ω 17 33 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 1) Current is limited by bondwire; with an R thJC=3.2 K/W the chip is able to carry 45 A. 2) See figure 3 3) T j,max=150 °C and duty cycle D
IPB14N03LA 价格&库存

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