IPB156N22NFDATMA1

IPB156N22NFD MOSFET OptiMOSTMFDPower-Transistor,220V D²PAK Features •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 220 V RDS(on),max 15.6 mΩ ID 72 A Type/OrderingCode Package IPB156N22NFD PG-TO 263-3 1) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 156N22NF RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2017-06-19 OptiMOSTMFDPower-Transistor,220V IPB156N22NFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.0,2017-06-19 OptiMOSTMFDPower-Transistor,220V IPB156N22NFD 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 72 56 A TC=25°C TC=100°C - 288 A TC=25°C - - 400 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 300 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.3 0.5 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area3) - - 40 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 220 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=270µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=176V,VGS=0V,Tj=25°C VDS=176V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 12.9 15.6 mΩ VGS=10V,ID=50A Gate resistance RG - 2.8 - Ω - Transconductance gfs 60 119 - S |VDS|>2|ID|RDS(on)max,ID=72A 1) See Diagran 3 for more detailed information See Diagran 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2017-06-19 OptiMOSTMFDPower-Transistor,220V IPB156N22NFD Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 6930 pF VGS=0V,VDS=110V,f=1MHz 343 456 pF VGS=0V,VDS=110V,f=1MHz - 6.2 - pF VGS=0V,VDS=110V,f=1MHz td(on) - 15 - ns VDD=110V,VGS=10V,ID=36A, RG,ext=1.6Ω Rise time tr - 15 - ns VDD=110V,VGS=10V,ID=36A, RG,ext=1.6Ω Turn-off delay time td(off) - 45 - ns VDD=110V,VGS=10V,ID=36A, RG,ext=1.6Ω Fall time tf - 15 - ns VDD=110V,VGS=10V,ID=36A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 5210 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 25 - nC VDD=110V,ID=72A,VGS=0to10V Gate to drain charge Qgd - 9.4 - nC VDD=110V,ID=72A,VGS=0to10V Switching charge Qsw - 19 - nC VDD=110V,ID=72A,VGS=0to10V Gate charge total Qg - 66 87 nC VDD=110V,ID=72A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=110V,ID=72A,VGS=0to10V Qoss - 153 203 nC VDD=110V,VGS=0V Unit Note/TestCondition 1) 1) Output charge Table7Reversediode3) Parameter Symbol Diode continous forward current Values Min. Typ. Max. IS - - 72 A TC=25°C IS,pulse - - 288 A TC=25°C Diode hard commutation current IS,hard - - 144 A TC=25°C,diF/dt=1500A/µs Diode forward voltage VSD - 0.91 1.2 V VGS=0V,IF=72A,Tj=25°C Reverse recovery time trr - 140 - ns VR=100V,IF=50A,diF/dt=100A/µs Reverse recovery charge Qrr - 340 - nC VR=100V,IF=50A,diF/dt=100A/µs Diode pulse current4) 1) 1) Define by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition 3) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs 4) Diode pulse current is defined by thermal and/or package limits 2) Final Data Sheet 4 Rev.2.0,2017-06-19 OptiMOSTMFDPower-Transistor,220V IPB156N22NFD 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 320 80 72 280 64 240 56 48 ID[A] Ptot[W] 200 160 40 32 120 24 80 16 40 0 8 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 10 µs 2 10 100 µs ZthJC[K/W] ID[A] 0.5 1 ms 101 10 ms 10-1 0.2 0.1 DC 0.05 0 10 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.0,2017-06-19 OptiMOSTMFDPower-Transistor,220V IPB156N22NFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 200 25 175 4.5 V 20 150 10 V 5V 7V RDS(on)[mΩ] ID[A] 125 100 5V 75 15 7V 10 V 10 50 5 4.5 V 25 0 0 1 2 3 4 0 5 0 20 40 60 VDS[V] 80 100 120 140 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 180 180 160 160 140 140 120 gfs[S] ID[A] 120 100 100 80 80 60 60 40 40 175 °C 20 0 0 2 20 25 °C 4 6 8 0 0 25 VGS[V] 75 100 125 150 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 50 gfs=f(ID);Tj=25°C 6 Rev.2.0,2017-06-19 OptiMOSTMFDPower-Transistor,220V IPB156N22NFD Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 50 4.0 45 3.5 40 2700 µA 3.0 270 µA 2.5 30 VGS(th)[V] RDS(on)[mΩ] 35 25 98% 20 2.0 1.5 typ 15 1.0 10 0.5 5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 Ciss 25 °C 175 °C 25°C, 98% 175°C, 98% Coss 103 IF[A] C[pF] 102 102 Crss 101 101 100 0 40 80 120 160 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.0,2017-06-19 OptiMOSTMFDPower-Transistor,220V IPB156N22NFD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 25 °C 8 176 V 110 V 100 °C 44 V VGS[V] IAS[A] 6 1 10 4 150 °C 2 100 100 101 102 103 0 0 tAV[µs] 20 40 60 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=72Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 260 240 VBR(DSS)[V] 220 200 180 160 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.0,2017-06-19 OptiMOSTMFDPower-Transistor,220V IPB156N22NFD 5PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches Final Data Sheet 9 Rev.2.0,2017-06-19 OptiMOSTMFDPower-Transistor,220V IPB156N22NFD RevisionHistory IPB156N22NFD Revision:2017-06-19,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-06-19 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.0,2017-06-19