IPB160N04S3-H2

IPB160N04S3-H2 OptiMOS®-T Power-Transistor Product Summary V DS 40 V R DS(on) 2.1 mΩ ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB160N04S3-H2 PG-TO263-7-3 3QN04H2 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Value 160 Unit A 157 Pulsed drain current2) I D,pulse T C=25 °C 640 Avalanche energy, single pulse E AS I D=80 A 898 mJ Gate source voltage V GS ±20 V Power dissipation P tot 214 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2007-04-16 IPB160N04S3-H2 Parameter Symbol Values Conditions Unit min. typ. max. - - 0.7 minimal footprint - - 62 6 cm2 cooling area3) - - 40 Thermal characteristics2) Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=150 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - - 1 - - 100 V DS=40 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A - 1.6 2.1 mΩ Rev. 1.0 page 2 2007-04-16 IPB160N04S3-H2 Parameter Symbol Values Conditions Unit min. typ. max. - 7400 9600 - 2000 2600 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 310 465 Turn-on delay time t d(on) - 30 - Rise time tr - 16 - Turn-off delay time t d(off) - 46 - Fall time tf - 17 - Gate to source charge Q gs - 38 50 Gate to drain charge Q gd - 25 45 Gate charge total Qg - 110 145 Gate plateau voltage V plateau - 5.2 - V - - 160 A - - 640 - 0.85 1.3 V - 60 - ns - 95 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=80 A, R G=3.3 Ω pF ns Gate Charge Characteristics2) V DD=32 V, I D=80 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=20 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.7 K/W the chip is able to carry 221 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2007-04-16 IPB160N04S3-H2 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 180 250 160 200 140 120 I D [A] P tot [W] 150 100 80 100 60 40 50 20 0 0 0 50 100 150 0 200 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs 0.5 10 µs 100 µs Z thJC [K/W] 10-1 I D [A] 1 ms 100 0.1 0.05 0.01 10-2 single pulse 10-3 10 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2007-04-16 IPB160N04S3-H2 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 14 10 V 600 6V 5.5 V 7V 6.5 V 7V 12 500 10 I D [A] R DS(on) [mΩ] 6.5 V 400 300 6V 200 8 6 4 5.5 V 100 2 10 V 5V 0 0 0 2 4 0 6 100 200 V DS [V] 300 400 500 600 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V parameter: T j 3 600 500 2.5 R DS(on) [mΩ] I D [A] 400 300 2 200 1.5 175 °C 100 25 °C -55 °C 1 0 2 3 4 5 6 7 8 -20 20 60 100 140 180 T j [°C] V GS [V] Rev. 1.0 -60 page 5 2007-04-16 IPB160N04S3-H2 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 1500µA 3 104 C [pF] V GS(th) [V] Ciss 150µA 2.5 Coss 103 2 1.5 Crss 1 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 30 V DS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: T j(start) 103 1000 102 100 25°C 175 °C I AV [A] I F [A] 100°C 25 °C 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 150°C 1 10 100 1000 t AV [µs] page 6 2007-04-16 IPB160N04S3-H2 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 52 4000 3500 48 20 A 3000 E AS [mJ] V BR(DSS) [V] 2500 2000 1500 40 A 44 40 1000 36 80 A 500 32 0 25 75 125 -60 175 -20 20 T j [°C] 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 V GS 10 Qg 8V 32 V V GS [V] 8 6 4 Q gate 2 Q gs Q gd 0 0 20 40 60 80 100 120 Q gate [nC] Rev. 1.0 page 7 2007-04-16 IPB160N04S3-H2 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2007-04-16 IPB160N04S3-H2 Revision History Version Rev. 1.0 Date Changes page 9 2007-04-16