IPB180N04S4-00
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
40
V
RDS(on)
0.98
mW
ID
180
A
Features
• N-channel - Enhancement mode
PG-TO263-7-3
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Marking
IPB180N04S4-00
PG-TO263-7-3
4N0400
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
T C=25°C, V GS=10V1)
T C=100 °C,
Value
180
V GS=10 V2)
180
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
720
Avalanche energy, single pulse2)
E AS
I D=90 A
1250
mJ
Avalanche current, single pulse
I AS
-
180
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25 °C
300
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Rev. 1.1
page 1
2015-10-07
IPB180N04S4-00
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
0.5
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=230 µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.1
1
T j=85 °C2)
-
1
20
V DS=18 V, V GS=0 V,
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=100 A
-
0.8
0.98
mΩ
Rev. 1.1
page 2
2015-10-07
IPB180N04S4-00
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
17600
22880 pF
-
3780
4900
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
130
300
Turn-on delay time
t d(on)
-
53
-
Rise time
tr
-
24
-
Turn-off delay time
t d(off)
-
67
-
Fall time
tf
-
58
-
Gate to source charge
Q gs
-
87
113
Gate to drain charge
Q gd
-
29
67
Gate charge total
Qg
-
220
286
Gate plateau voltage
V plateau
-
5.0
-
V
-
-
180
A
-
-
720
-
0.9
1.3
V
-
85
-
ns
-
132
-
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=180 A, R G=3.5 W
ns
Gate Charge Characteristics2)
V DD=32 V, I D=180 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time2)
t rr
Reverse recovery charge2)
Q rr
T C=25 °C
V GS=0 V, I F=100 A,
T j=25 °C
V R=20 V, I F=50A,
di F/dt =100 A/µs
1)
Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 425A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2015-10-07
IPB180N04S4-00
1 Power dissipation
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V
350
200
180
300
160
140
120
200
ID [A]
Ptot [W]
250
150
100
80
60
100
40
50
20
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
100
1 µs
10 µs
0.5
100 µs
1 ms
100
10-1
ID [A]
ZthJC [K/W]
0.1
0.05
0.01
10
10-2
single pulse
1
10-3
0.1
1
10
100
VDS [V]
Rev. 1.1
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2015-10-07
IPB180N04S4-00
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
6
700
10 V
5V
5.5 V
6V
7V
6.5 V
600
5
6V
500
RDS(on) [mW]
4
ID [A]
400
300
5.5 V
3
2
200
6.5 V
1
5V
100
7V
10 V
0
0
0
2
4
0
6
100
200
300
400
500
600
ID [A]
VDS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
parameter: T j
720
1.5
630
1.25
540
RDS(on) [mW]
ID [A]
450
360
1
270
175 °C
0.75
180
25 °C
90
-55 °C
0.5
0
2
4
6
8
-20
20
60
100
140
180
Tj [°C]
VGS [V]
Rev. 1.1
-60
page 5
2015-10-07
IPB180N04S4-00
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
105
4
3.5
Ciss
2300 µA
104
Coss
C [pF]
VGS(th) [V]
3
230 µA
2.5
103
2
1.5
Crss
102
1
-60
-20
20
60
100
140
0
180
5
10
Tj [°C]
15
20
25
30
VDS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I AS = f(t AV)
parameter: T j
parameter: Tj(start)
103
1000
102
100
25 °C
175 °C
IAV [A]
IF [A]
100 °C
25 °C
10
101
1
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD [V]
Rev. 1.1
150 °C
1
10
100
1000
tAV [µs]
page 6
2015-10-07
IPB180N04S4-00
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
44
3000
45 A
2500
42
VBR(DSS) [V]
EAS [mJ]
2000
1500
90 A
40
1000
180 A
500
38
0
25
75
125
-60
175
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 180 A pulsed
parameter: V DD
12
V GS
10
Qg
8V
32 V
VGS [V]
8
6
4
Q gate
2
Q gs
Q gd
0
0
40
80
120
160
200
240
Qgate [nC]
Rev. 1.1
page 7
2015-10-07
IPB180N04S4-00
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 8
2015-10-07
IPB180N04S4-00
Revision History
Version
Date
Changes
Revision 1.0
2010-04-13 Final Data Sheet
Revision 1.1
2015-10-07 Update of labeling of diagram 6
Rev. 1.1
page 9
2015-10-07
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