IPB180N10S402ATMA1

IPB180N10S4-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on) 2.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB180N10S4-02 PG-TO263-7-3 4N1002 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V1) 180 T C=100°C, V GS=10V2) 171 Unit A Pulsed drain current2) I D,pulse T C=25°C 720 Avalanche energy, single pulse2) E AS I D=90A 1110 mJ Avalanche current, single pulse I AS - 180 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 300 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2013-01-30 IPB180N10S4-02 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.5 SMD version, device on PCB R thJA minimal footprint - - 62 6cm2 cooling area3) - - 40 100 - - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA Gate threshold voltage V GS(th) V DS=V GS, I D=275µA 2.0 2.7 3.5 Zero gate voltage drain current I DSS V DS=100V, V GS=0V, T j=25°C - 0.1 1 - 10 100 V DS=100V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10V, I D=100A - 2.0 2.5 mΩ Rev. 1.0 page 2 2013-01-30 IPB180N10S4-02 Parameter Symbol Values Conditions Unit min. typ. max. - 11240 14600 pF - 3660 4760 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 230 460 Turn-on delay time t d(on) - 15 - Rise time tr - 9 - Turn-off delay time t d(off) - 30 - Fall time tf - 40 - Gate to source charge Q gs - 52 68 Gate to drain charge Q gd - 30 60 Gate charge total Qg - 156 200 Gate plateau voltage V plateau - 4.7 - V - - 180 A - - 720 - 1.0 1.2 V - 100 - ns - 230 - nC V GS=0V, V DS=25V, f =1MHz V DD=50V, V GS=10V, I D=180A, R G=1.6Ω ns Gate Charge Characteristics2) V DD=80V, I D=180A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25°C V GS=0V, I F=100A, T j=25°C V R=50V, I F=50A, di F/dt =100A/µs 1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 242A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2013-01-30 IPB180N10S4-02 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 200 350 180 300 160 140 120 200 ID [A] Ptot [W] 250 150 100 80 60 100 40 50 20 0 0 0 50 100 150 0 200 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs 10 µs 100 µs 1 ms 0.5 100 10-1 ID [A] ZthJC [K/W] 0.1 10 0.05 10-2 0.01 single pulse 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-01-30 IPB180N10S4-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 6 720 10 V 5V 7V 5.5 V 6.0 V 5.5 630 6V 5 540 4.5 RDS(on) [mΩ] 450 ID [A] 5.5 V 360 270 4 3.5 3 5V 2.5 7V 180 10 V 2 90 1.5 1 0 0 1 2 3 4 0 5 180 360 540 720 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 720 4.5 630 4 540 3.5 RDS(on) [mΩ] ID [A] 450 360 3 2.5 270 2 180 175 °C 1.5 25 °C 90 -55 °C 1 0 2 4 6 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2013-01-30 IPB180N10S4-02 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 Ciss 104 3 C [pF] VGS(th) [V] 2750 µA 2.5 275 µA Coss 103 2 1.5 Crss 102 1 -60 -20 20 60 100 140 0 180 5 10 Tj [°C] 15 20 25 30 VDS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 25 °C 175 °C 25 °C 10 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 150 °C IAV [A] IF [A] 100 °C 1 10 100 1000 tAV [µs] page 6 2013-01-30 IPB180N10S4-02 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 110 2500 108 45 A 2000 106 104 VBR(DSS) [V] EAS [mJ] 1500 90 A 1000 102 100 98 180 A 500 96 94 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 180 A pulsed parameter: V DD 12 V GS 10 20 V Qg 80 V VGS [V] 8 6 4 Q gate 2 Q gs Q gd 0 0 40 80 120 160 200 Qgate [nC] Rev. 1.0 page 7 2013-01-30 IPB180N10S4-02 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2013 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2013-01-30 IPB180N10S4-02 Revision History Version Date Changes Revision 1.0 30.01.2013 Final Data Sheet Rev. 1.0 page 9 2013-01-30