IPB180N10S403ATMA1

IPB180N10S4-03 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on) 3.3 mW ID 180 A Features • N-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB180N10S4-03 PG-TO263-7-3 4N1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V1) 180 T C=100°C, V GS=10V2) 134 Unit A Pulsed drain current2) I D,pulse T C=25°C 720 Avalanche energy, single pulse2) E AS I D=90A 530 mJ Avalanche current, single pulse I AS - 180 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 250 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2014-06-30 IPB180N10S4-03 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.6 SMD version, device on PCB R thJA minimal footprint - - 62 6cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=180µA 2.0 2.7 3.5 Zero gate voltage drain current I DSS V DS=100V, V GS=0V, T j=25°C - 0.1 1 T j=125°C2) - 10 100 V DS=100V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10V, I D=100A - 2.7 3.3 mΩ Rev. 1.0 page 2 2014-06-30 IPB180N10S4-03 Parameter Symbol Values Conditions Unit min. typ. max. - 7780 10120 pF - 2460 3200 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 150 300 Turn-on delay time t d(on) - 20 - Rise time tr - 10 - Turn-off delay time t d(off) - 40 - Fall time tf - 45 - Gate to source charge Q gs - 37 48 Gate to drain charge Q gd - 21 42 Gate charge total Qg - 108 140 Gate plateau voltage V plateau - 4.8 - V - - 180 A - - 720 - 1.0 1.3 V - 80 - ns - 170 - nC V GS=0V, V DS=25V, f =1MHz V DD=50V, V GS=10V, I D=180A, R G=3.5W ns Gate Charge Characteristics2) V DD=80V, I D=180A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25°C V GS=0V, I F=100A, T j=25°C V R=50V, I F=50A, di F/dt =100A/µs 1) Current is limited by bondwire; with an R thJC = 0.6K/W the chip is able to carry 189A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2014-06-30 IPB180N10S4-03 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 300 200 180 250 160 140 200 ID [A] Ptot [W] 120 150 100 80 100 60 40 50 20 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs 10 µs 0.5 100 µs 1 ms 100 10-1 ID [A] ZthJC [K/W] 0.1 10 0.05 0.01 10-2 single pulse 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-06-30 IPB180N10S4-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 8 720 10 V 5V 5.5 V 6V 7V 630 7 540 6 ID [A] RDS(on) [mW] 6V 450 360 5.5 V 270 5 4 7V 5V 180 3 10 V 90 2 0 0 1 2 3 4 0 5 180 360 540 720 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 720 6.5 175 °C 25 °C 630 -55 °C 5.5 540 RDS(on) [mW] ID [A] 450 360 270 4.5 3.5 180 2.5 90 1.5 0 2 4 6 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2014-06-30 IPB180N10S4-03 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 104 3 Ciss C [pF] VGS(th) [V] 1800 µA 2.5 180 µA Coss 103 2 1.5 Crss 102 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics I F = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 175 °C IAV [A] IF [A] 25 °C 25 °C 100 °C 150 °C 10 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 10 100 1000 tAV [µs] page 6 2014-06-30 IPB180N10S4-03 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 110 1250 108 45 A 1000 106 104 VBR(DSS) [V] EAS [mJ] 750 90 A 500 102 100 98 180 A 250 96 94 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 180 A pulsed parameter: V DD 12 V GS 10 Qg 20 V 80 V VGS [V] 8 6 4 Q gate 2 Q gs Q gd 0 0 40 80 120 Qgate [nC] Rev. 1.0 page 7 2014-06-30 IPB180N10S4-03 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-06-30 IPB180N10S4-03 Revision History Version Date Changes Revision 1.0 30.06.2014 Data Sheet Revision 1.0 Rev. 1.0 page 9 2014-06-30