IPB180P04P403ATMA2

Final Data Sheet OptiMOS®-P2 Power-Transistor IPB180P04P4-03 Product Summary VDS -40 V RDS(on) 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Drain Pin 4, Tab Gate Pin 1 Source Pin 2, 3, 5, 6, 7 Type Package Marking IPB180P04P4-03 PG-TO263-7-3 4QP0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25°C, V GS=-10V T C=100°C, Value -180 V GS=-10V2) -131 Unit A Pulsed drain current2) I D,pulse T C=25°C -720 Avalanche energy, single pulse E AS I D=-90A 90 Avalanche current, single pulse I AS - -180 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 150 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 mJ 2018-01-18 Final Data Sheet Parameter Symbol IPB180P04P4-03 Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 1.0 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= -1mA -40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-410µA -2.0 -3.0 -4.0 Zero gate voltage drain current I DSS V DS=-32V, V GS=0V, T j=25°C - -0.1 -1 T j=125°C2) - -20 -200 V DS=-32V, V GS=0V, V µA Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-10V, I D=-100A - 2.0 2.8 mW Rev. 1.1 page 2 2018-01-18 Final Data Sheet Parameter Symbol IPB180P04P4-03 Values Conditions Unit min. typ. max. - 13570 17640 pF - 4070 5290 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 110 220 Turn-on delay time t d(on) - 48 - Rise time tr - 31 - Turn-off delay time t d(off) - 72 - Fall time tf - 81 - Gate to source charge Q gs - 70 95 Gate to drain charge Q gd - 35 70 Gate charge total Qg - 190 250 Gate plateau voltage V plateau - -5.2 - V - - -180 A - - -720 - -1 -1.3 V - 83 - ns - 131 - nC V GS=0V, V DS=-25V, f =1MHz V DD=-20V, V GS=-10V, I D=-180A, R G=3.5W ns Gate Charge Characteristics2) V DD=-32V, I D=-180A, V GS=0 to -10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25°C V GS=0V, I F=-100A, T j=25°C V R=-20V, I F=-50A, di F/dt =-100A/µs 1) Current is limited by bondwire; with an R thJC = 1.0K/W the chip is able to carry -185A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2018-01-18 Final Data Sheet IPB180P04P4-03 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≤ -6V I D = f(T C); V GS ≤ -6V; SMD 160 200 180 140 160 120 140 120 -ID [A] Ptot [W] 100 80 100 80 60 60 40 40 20 20 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 1 ms 100 µs 100 10 µs 100 -ID [A] ZthJC [K/W] 0.5 10-1 0.1 0.05 10 0.01 10-2 single pulse 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 tp [s] -VDS [V] Rev. 1.1 10-6 page 4 2018-01-18 Final Data Sheet IPB180P04P4-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = (I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 10 720 -10V -8V -5V -5V -7V -5.5V 640 560 -6.5V 7 RDS(on) [mW] -ID [A] 480 400 -6V 320 4 240 -6V -6.5V -6.5V -7V 160 -8V -10V 80 1 0 0 2 4 0 6 80 160 -ID [A] -VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = -6V R DS(on) = f(T j); I D = -100 A; V GS = -10 V; SMD parameter: T j 720 3.5 630 3 540 RDS(on) [mW] -ID [A] 450 360 270 2.5 2 180 1.5 175 °C 90 -55 °C 25 °C 1 0 2 3 4 5 6 7 8 -20 20 60 100 140 180 Tj [°C] -VGS [V] Rev. 1.1 -60 page 5 2018-01-18 Final Data Sheet IPB180P04P4-03 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 Ciss 104 Coss -4100µA -410µA C [pF] -VGS(th) [V] 3 2.5 103 2 Crss 102 1.5 101 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 140 180 -VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Drain-source breakdown voltage IF = f(VSD) V BR(DSS) = f(T j); I D = -1 mA parameter: T j 45 103 44 43 42 175 °C -VBR(DSS) [V] -IF [A] 102 25 °C 41 40 39 101 38 37 36 100 35 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD [V] Rev. 1.1 -60 -20 20 60 100 Tj [°C] page 6 2018-01-18 Final Data Sheet 13 Typ. gate charge IPB180P04P4-03 14 Gate charge waveforms V GS = f(Q gate); I D = -180 A pulsed parameter: V DD 12 V GS 10 Qg 8 -VGS [V] -8V -32V 6 4 Q gate 2 Q gs Q gd 0 0 20 40 60 80 100 120 140 160 180 200 Qgate [nC] Rev. 1.1 page 7 2018-01-18 Final Data Sheet IPB180P04P4-03 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2011 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2018-01-18 Final Data Sheet IPB180P04P4-03 Revision History Version Rev. 1.1 Date Changes 1.0 27.04.2011 Final Data Sheet 1.1 18.01.2018 Condition for Avalanche energy page 9 2018-01-18