IPB240N04S4-1R0
OptiMOS™-T2 Power-Transistor
Product Summary
V DS
40
V
R DS(on)
1.0
mW
ID
240
A
Features
• N-channel - Enhancement mode
PG-TO263-7-3
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Marking
IPB240N04S4-1R0
PG-TO263-7-3
4N041R0
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
T C=25°C, V GS=10V1)
T C=100 °C,
Value
240
V GS=10 V2)
240
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
960
Avalanche energy, single pulse2)
E AS
I D=120 A
750
mJ
Avalanche current, single pulse
I AS
-
190
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25 °C
231
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
Rev. 1.0
page 1
2013-08-22
IPB240N04S4-1R0
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
0.65
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=180 µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.1
1
T j=85 °C2)
-
1
20
V DS=18 V, V GS=0 V,
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=100 A
-
0.85
1.00
mΩ
Rev. 1.0
page 2
2013-08-22
IPB240N04S4-1R0
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
13601
17682 pF
-
2969
3860
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
104
238
Turn-on delay time
t d(on)
-
42
-
Rise time
tr
-
28
-
Turn-off delay time
t d(off)
-
44
-
Fall time
tf
-
47
-
Gate to source charge
Q gs
-
77
100
Gate to drain charge
Q gd
-
24
54
Gate charge total
Qg
-
170
221
Gate plateau voltage
V plateau
-
5.5
-
V
-
-
240
A
-
-
960
-
0.9
1.3
V
-
80
-
ns
-
130
-
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=240 A, R G=3.5 W
ns
Gate Charge Characteristics2)
V DD=32 V, I D=240 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time2)
t rr
Reverse recovery charge2)
Q rr
T C=25 °C
V GS=0 V, I F=100 A,
T j=25 °C
V R=20 V, I F=50A,
di F/dt =100 A/µs
1)
Current is limited by bondwire; with an R thJC = 0.65 K/W the chip is able to carry 367A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2013-08-22
IPB240N04S4-1R0
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
250
260
240
220
200
200
180
160
I D [A]
P tot [W]
150
100
140
120
100
80
60
50
40
20
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
100
1000
10 µs
1 µs
100 µs
0.5
1 ms
10-1
0.1
I D [A]
Z thJC [K/W]
100
0.05
0.01
10-2
10
single pulse
10-3
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
10-6
page 4
2013-08-22
IPB240N04S4-1R0
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
6
700
6.5 V
5V
10 V
7V
600
5
500
4
R DS(on) [mW]
6V
I D [A]
400
300
5.5 V
3
2
5.5 V
200
6V
6.5 V
7V
10 V
1
100
5V
0
0
0
2
4
0
6
100
200
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
parameter: T j
1000
1.5
900
800
1.25
R DS(on) [mW]
700
I D [A]
600
500
400
1
300
0.75
200
175 °C
25 °C
100
-55 °C
0.5
0
2
3
4
5
6
7
8
-20
20
60
100
140
180
T j [°C]
V GS [V]
Rev. 1.0
-60
page 5
2013-08-22
IPB240N04S4-1R0
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
105
4
3.5
Ciss
104
1800 µA
Coss
C [pF]
V GS(th) [V]
3
180 µA
2.5
103
2
Crss
102
1.5
1
-60
-20
20
60
100
140
0
180
5
10
T j [°C]
15
20
25
12 Typ. avalanche characteristics
IF = f(VSD)
I AS = f(t AV)
parameter: T j
parameter: Tj(start)
102
100
I AV [A]
1000
I F [A]
103
25 °C
101
40
25 °C
100 °C
150 °C
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
Rev. 1.0
35
V DS [V]
11 Typical forward diode characteristicis
175 °C
30
0.1
1
10
100
1000
t AV [µs]
page 6
2013-08-22
IPB240N04S4-1R0
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
44
1750
1500
60 A
1250
V BR(DSS) [V]
42
E AS [mJ]
1000
750
120 A
40
190 A
500
250
38
0
25
75
125
-60
175
-20
20
T j [°C]
60
100
140
180
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 180 A pulsed
parameter: V DD
10
9
V GS
8V
32 V
Qg
8
7
V GS [V]
6
5
4
3
2
Q gate
1
Q gs
Q gd
0
0
40
80
120
160
Q gate [nC]
Rev. 1.0
page 7
2013-08-22
IPB240N04S4-1R0
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2013
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2013-08-22
IPB240N04S4-1R0
Revision History
Version
Date
Changes
1.0
Rev. 1.0
22.08.2013 Final Data Sheet
page 9
2013-08-22
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