IPB60R099CPAATMA1

IPB60R099CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications Type Package Marking IPB60R099CPA PG-TO263-3-2 6R099A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 31 T C=100 °C 19 Pulsed drain current1) I D,pulse T C=25 °C 93 Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 800 Avalanche energy, repetitive t AR1),2) E AR I D=11 A, V DD=50 V 1.2 Avalanche current, repetitive t AR1),2) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage Unit A mJ 11 A V DS=0...480 V 50 V/ns V GS static ±20 V Power dissipation P tot T C=25 °C 255 W Operating temperature Tj -40 ... 150 °C Storage temperature T stg -40 ... 150 Rev. 2.1 page 1 2009-03-25 IPB60R099CPA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current1) I S,pulse Reverse diode dv /dt 3) dv /dt Parameter Symbol Conditions Value Unit 18 T C=25 °C A 93 15 V/ns Values Unit min. typ. max. - - 0.5 - - 62 - 35 - - - 245 °C V Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient Soldering temperature, reflow soldering T sold SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area4) MSL1, reflow acc. to IPC-JEDEC J-STD020C K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1.2 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 5 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A, T j=25 °C - 0.09 0.105 Ω V GS=10 V, I D=18 A, T j=150 °C - 0.24 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 2.1 RG page 2 Ω 2009-03-25 IPB60R099CPA Parameter Values Symbol Conditions Unit min. typ. max. - 2800 - - 130 - - 130 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related6) V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V Effective output capacitance, time related7) C o(tr) - 340 - Turn-on delay time t d(on) - 10 - Rise time tr - 5 - Turn-off delay time t d(off) - 60 - Fall time tf - 5 - Gate to source charge Q gs - 14 - Gate to drain charge Q gd - 20 - Gate charge total Qg - 60 80 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 450 - ns - 12 - µC - 70 - A V DD=400 V, V GS=10 V, I D=18 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=18 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=18 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) Pulse width t p limited by T j,max 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) I SD≤I D, di /dt≤ 100A/µs,V DClink = 400V, V peak