IPB60R120C7ATMA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 600VCoolMOS™C7PowerTransistor IPB60R120C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™C7PowerTransistor IPB60R120C7 1Description D²PAK CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. tab 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. 2 The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². 1 3 Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Benefits •IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency •Enablinghighersystemefficiencybylowerswitchinglosses •Increasedpowerdensitysolutionsduetosmallerpackages •Suitableforapplicationssuchasserver,telecomandsolar •Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto lowEossandQg Applications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 120 mΩ Qg.typ 34 nC ID,pulse 66 A ID,continuous @ Tj1 Hz) Power dissipation Ptot - - 92 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - n.a. Ncm - Continuous diode forward current IS - - 19 A TC=25°C Diode pulse current2) IS,pulse - - 66 A TC=25°C Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD