IPB60R165CPATMA1

IPB60R165CP CoolMOS® Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS(on),max • Ultra low gate charge V 39 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO263 • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies for Server and Telecom Type Package IPB60R165CP PG-TO263 Ordering Code SP000096439 Marking 6R165P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 21 T C=100 °C 13 Pulsed drain current2) I D,pulse T C=25 °C 61 Avalanche energy, single pulse E AS I D=7.9 A, V DD=50 V 522 Avalanche energy, repetitive t AR2),3) E AR I D=7.9 A, V DD=50 V 0.79 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Rev. 2.1 Unit A mJ 7.9 A V DS=0...480 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 192 W -55 ... 150 °C page 1 2009-06-05 IPB60R165CP Maximum ratings, at T j=25 °C, unless otherwise specified Value Parameter Symbol Conditions Unit Continuous diode forward current IS Diode pulse current 2) I S,pulse 61 Reverse diode dv /dt 4) dv /dt 15 V/ns Parameter Symbol Conditions Values Unit 12 T C=25 °C A min. typ. max. - - 0.65 - - 62 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) Soldering temperature, reflowsoldering T sold reflow MSL 1 K/W 35 - - 260 °C 600 - - V Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=0.79 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 1 V DS=600 V, V GS=0 V, T j=150 °C - 10 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=12 A, T j=25 °C - 0.15 0.165 Ω V GS=10 V, I D=12 A, T j=150 °C - 0.40 - f =1 MHz, open drain - 1.9 - Gate resistance Rev. 2.1 RG page 2 Ω 2007-11-22 IPB60R165CP Parameter Values Symbol Conditions Unit min. typ. max. - 2000 - - 100 - - 83 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related6) C o(er) Effective output capacitance, time related7) C o(tr) - 220 - Turn-on delay time t d(on) - 12 - Rise time tr - 5 - Turn-off delay time t d(off) - 50 - Fall time tf - 5 - Gate to source charge Q gs - 9 - Gate to drain charge Q gd - 13.0 - Gate charge total Qg - 39 52 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 390 - ns - 7.5 - µC - 38 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=12 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=12 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=12 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD≤ID, di/dt≤200A/µs,VDClink=400V, Vpeak