IPB64N25S3-20

IPB64N25S3-20 OptiMOS®-T Power-Transistor Product Summary VDS 250 V RDS(on),max 20 m ID 64 A Features PG‐TO263‐3‐2 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB64N25S3-20 PG-TO263-3-2 3PN2520 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25 °C, V GS=10 V 64 T C=100°C, V GS=10V1) 46 Unit A Pulsed drain current1) I D,pulse T C=25°C 256 Avalanche energy, single pulse1) E AS I D=27A 270 mJ Avalanche current, single pulse I AS - 27 A Reverse diode dv /dt dv /dt 6 kV/µs Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 300 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2014-09-12 IPB64N25S3-20 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1), 3) Thermal resistance, junction - case R thJC - - - 0.5 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 250 - - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA Gate threshold voltage V GS(th) V DS=V GS, I D=270µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=250V, V GS=0V - 0.1 1 - 10 100 V DS=250V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=64A - 17.5 20 m Rev. 1.1 page 2 2014-09-12 IPB64N25S3-20 Parameter Symbol Values Conditions Unit min. typ. max. - 5240 7000 - 2900 3900 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 85 170 Turn-on delay time t d(on) - 18 - Rise time tr - 20 - Turn-off delay time t d(off) - 45 - Fall time tf - 12 - Gate to source charge Q gs - 24 31 Gate to drain charge Q gd - 11 22 Gate charge total Qg - 67 89 Gate plateau voltage V plateau - 4.8 - V - - 64 A - - 256 V GS=0V, V DS=25V, f =1MHz V DD=100V, V GS=10V, I D=25A, R G=1.6 pF ns Gate Charge Characteristics1) V DD=200V, I D=64A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=64A, T j=25°C - 1 1.2 V Reverse recovery time1) t rr V R=125V, I F=50A, di F/dt =100A/µs - 174 - ns Reverse recovery charge1) Q rr - 1095 - nC 1) T C=25°C Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Devices thermal performance determined according to EIA JESD 51-14 "Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance" Rev. 1.1 page 3 2014-09-12 IPB64N25S3-20 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V; SMD 350 80 300 60 200 ID [A] Ptot [W] 250 40 150 100 20 50 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 0.5 1 µs 10 µs 100 0.1 ZthJC [K/W] ID [A] 10-1 100 µs 10 0.05 0.01 10-2 single pulse 1 ms 1 10-3 0.1 1 10 100 1000 VDS [V] Rev. 1.1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-09-12 IPB64N25S3-20 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 25 250 10 V 4.5 V 6V 5.5 V 23 150 21 ID [A] RDS(on) [m] 200 100 5V 19 5.5 V 6V 50 17 0 0 2 4 6 8 10 V 15 10 0 10 20 VDS [V] 30 40 50 60 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 64 A; V GS = 10 V; SMD parameter: T j 256 55 224 192 45 RDS(on) [m] ID [A] 160 128 96 35 25 175 °C 64 25 °C 15 32 -55 °C 0 3 4 5 6 7 VGS [V] Rev. 1.1 5 -60 -20 20 60 100 140 180 Tj [°C] page 5 2014-09-12 IPB64N25S3-20 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss 3.5 C [pF] 103 VGS(th) [V] 3 270 µA Coss 102 2.5 27 µA Crss 2 101 1.5 -60 -20 20 60 100 140 0 180 50 100 150 200 250 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 103 102 25 °C 175 °C 25 °C IAV [A] IF [A] 102 101 175 °C 101 150 °C 10 25 °C 100 100 °C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.1 1 1 10 100 tAV [µs] page 6 2014-09-12 IPB64N25S3-20 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 270 µA parameter: I D 1200 280 275 1000 270 265 6.75 A VBR(DSS) [V] EAS [mJ] 800 600 400 13.5 A 260 255 250 245 240 200 27 A 235 230 0 25 75 125 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 64 A pulsed parameter: V DD 10 V GS 80 V 9 Qg 200 V 8 7 VGS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw Q gate 1 Q gs 0 0 20 40 60 Q gd 80 Qgate [nC] Rev. 1.1 page 7 2014-09-12 IPB64N25S3-20 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2014-09-12 IPB64N25S3-20 Revision History Version Date Changes Revision 1.0 2012-10-18 Final Data Sheet Revision 1.1 2014-09-12 Through-hole parts removed Rev. 1.1 page 9 2014-09-12