IPB65R041CFD7ATMA1

IPB65R041CFD7 MOSFET 650VCoolMOSªCFD7SJPowerDevice D²PAK Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof theCFD7familyandisasuccessortothe650VCoolMOS™CFD2. Resultingfromimprovedswitchingperformanceandexcellentthermal behavior,650VCooMOS™CFD7offershighestefficiencyinresonant switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard commutationrobustness.TheCoolMOS™CFD7technologymeets highestefficiencyandreliabilitystandardsandfurthermoresupportshigh powerdensitysolutions. tab 2 1 3 Features Drain Pin 2, Tab •Ultra-fastbodydiode •650Vbreakdownvoltage •Best-in-classRDS(on) •Reducedswitchinglosses •LowRDS(on)dependencyovertemperature Gate Pin 1 *1: Internal body diode *1 Source Pin 3 Benefits •Excellenthardcommutationruggedness •Extrasafetymarginfordesignswithincreasedbusvoltage •Enablingincreasedpowerdensitysolutions •OutstandinglightloadefficiencyinindustrialSMPSapplications •ImprovedfullloadefficiencyinindustrialSMPSapplications •PricecompetitivenessoverpreviousCoolMOS™families Potentialapplications SuitableforSoftSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server, Telecom,EVCharging,Solar Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 41 mΩ Qg,typ 102 nC ID,pulse 211 A Eoss @ 400V 14.0 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package IPB65R041CFD7 PG-TO263-3 Final Data Sheet Marking 65R041F7 1 RelatedLinks see Appendix A Rev.2.0,2020-10-19 650VCoolMOSªCFD7SJPowerDevice IPB65R041CFD7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2020-10-19 650VCoolMOSªCFD7SJPowerDevice IPB65R041CFD7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 50 32 A TC=25°C TC=100°C - 211 A TC=25°C - - 248 mJ ID=6.4A; VDD=50V; see table 10 EAR - - 1.24 mJ ID=6.4A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 6.4 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 227 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - - - - - Ncm - IS - - 50 A TC=25°C Diode pulse current IS,pulse - - 211 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD