MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
650VCoolMOS™C7PowerTransistor
IPB65R045C7
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
650VCoolMOS™C7PowerTransistor
IPB65R045C7
1Description
D²PAK
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
CoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.Theproductportfolio
providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering
betterefficiency,reducedgatecharge,easyimplementationand
outstandingreliability.
tab
2
1
3
Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2, tab
Gate
Pin 1
Source
Pin 3
Benefits
•Enablinghighersystemefficiency
•Enablinghigherfrequency/increasedpowerdensitysolutions
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetoloweroperatingtemperatures
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
45
mΩ
Qg.typ
93
nC
ID,pulse
212
A
Eoss@400V
11.7
µJ
Body diode di/dt
60
A/µs
Type/OrderingCode
Package
Marking
IPB65R045C7
PG-TO 263
65C7045
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.1,2013-04-30
650VCoolMOS™C7PowerTransistor
IPB65R045C7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.1,2013-04-30
650VCoolMOS™C7PowerTransistor
IPB65R045C7
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current 1)
Values
Unit
Note/TestCondition
46
29
A
TC=25°C
TC=100°C
-
212
A
TC=25°C
-
-
249
mJ
ID=12A; VDD=50V
EAR
-
-
1.25
mJ
ID=12A; VDD=50V
Avalanche current, single pulse
IAS
-
-
12.0
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
227
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
-
Ncm -
Continuous diode forward current
IS
-
-
46
A
TC=25°C
Diode pulse current2)
IS,pulse
-
-
212
A
TC=25°C
dv/dt
-
-
1.5
V/ns
VDS=0...400V,ISD
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