IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
OptiMOS® Power-Transistor
Product Summary
V DS
40
V
R DS(on),max (SMD version)
3.7
mΩ
ID
80
A
Features
• N-channel - Enhancement mode
PG-TO263-3-2
• Automotive AEC Q101 qualified
PG-TO262-3-1
PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
• Green product (RoHS compliant)
Type
Package
Marking
IPB80N04S2-H4
PG-TO263-3-2
2N04H4
IPP80N04S2-H4
PG-TO220-3-1
2N04H4
IPI80N04S2-0H4
PG-TO262-3-1
2N04H4
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
80
Unit
A
80
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse
E AS
I D=80A
660
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
300
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.1
55/175/56
page 1
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
0.5
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=40 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=80 A
-
3.5
4.0
mΩ
V GS=10 V, I D=80 A,
SMD version
-
3.2
3.7
Rev. 1.1
page 2
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
4400
-
-
1800
-
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
480
-
Turn-on delay time
t d(on)
-
23
-
Rise time
tr
-
63
-
Turn-off delay time
t d(off)
-
46
-
Fall time
tf
-
22
-
Gate to source charge
Q gs
-
21
29
Gate to drain charge
Q gd
-
38
70
Gate charge total
Qg
-
103
148
Gate plateau voltage
V plateau
-
4.9
-
V
-
-
80
A
-
-
320
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=80 A, R G=1.3 Ω
pF
ns
Gate Charge Characteristics2)
V DD=32 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
-
0.9
1.3
V
Reverse recovery time2)
t rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
-
195
-
ns
Reverse recovery charge2)
Q rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
-
370
-
nC
T C=25 °C
1)
Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 200A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 10 V
350
100
300
80
60
200
I D [A]
P tot [W]
250
150
40
100
20
50
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
100
10 µs
0.5
100 µs
10-1
1 ms
I D [A]
Z thJC [K/W]
100
0.05
10-2
10
0.1
0.01
single pulse
10-3
1
0.1
Rev. 1.1
1
V DS [V]
10
100
page 4
10-7
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
300
10 V
7V
6.5 V
5.5 V
6V
18
250
6V
6.5 V
14
RDS(on) [mW]
I D [A]
200
5.5 V
150
10
100
5V
6
50
7V
10 V
0
2
0
2
4
6
8
10
0
80
160
240
V DS [V]
8 Typ. Forward transconductance
I D = f(V GS); V DS = 6V
g fs = f(I D); T j = 25°C
parameter: T j
parameter: g fs
320
200
280
175
240
150
200
125
g fs [S]
I D [A]
7 Typ. transfer characteristics
160
100
120
75
80
50
175 °C
40
25 °C
25
-55 °C
0
0
2
3
4
5
6
7
V GS [V]
Rev. 1.1
320
I D [A]
0
50
100
150
I D [A]
page 5
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
9 Typ. Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(ON) = f(T j)
V GS(th) = f(T j); V GS = V DS
parameter: I D = 80 A; VGS = 10 V
parameter: I D
4
6
3.5
5
V GS(th) [V]
R DS(on) [mΩ]
3
4
1250 µA
250 µA
2.5
2
3
1.5
2
1
-60
-20
20
60
100
140
-60
180
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(V DS); V GS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
103
104
102
I F [A]
C [pF]
Ciss
Coss
103
175 °C
101
25 °C
Crss
102
100
0
5
10
15
20
25
30
V DS [V]
Rev. 1.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
page 6
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
13 Avalanche energy
14 Typ. gate charge
E AS = f(T j)
V GS = f(Q gate); I D = 80 A pulsed
parameter: I D
3000
12
10
2000
8
V GS [V]
E AS [mJ]
20 A
2500
1500
40 A
1000
32 V
8V
6
4
80 A
500
2
0
0
25
75
125
175
0
20
40
T j [°C]
60
80
100
120
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS) = f(T j); I D = 1 mA
48
V GS
46
Qg
V BR(DSS) [V]
44
42
40
Q gate
38
Q gs
Q gd
36
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.1
page 7
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.1
page 8
2008-02-22
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Revision History
Version
Date
Changes
Revision 1.1
22.02.2008
Update of side 1 and 10 according
to new template
Revision 1.1
22.02.2008
Update of SOA diagram, labelling
Rev. 1.1
page 9
2008-02-22
