IPB80N06S2L-07

IPB80N06S2L-07 IPP80N06S2L-07 OptiMOS® Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS(on),max (SMD version) 6.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 • Green package (lead free) PG-TO220-3-1 • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2L-07 PG-TO263-3-2 SP0002-18867 2N06L07 IPP80N06S2L-07 PG-TO220-3-1 SP0002-18831 2N06L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 80 Unit A 80 Pulsed drain current2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse2) E AS I D= 80 A 450 mJ Gate source voltage4) V GS ±20 V Power dissipation P tot 210 W Operating and storage temperature T j, T stg -55 ... +175 °C Rev. 1.0 T C=25 °C page 1 2005-12-27 IPB80N06S2L-07 IPP80N06S2L-07 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.7 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=150 µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=60 A - 7.1 10 mΩ V GS=4.5 V, I D=60 A, SMD version - 6.8 9.7 V GS=10 V, I D=60 A, - 5.6 7.0 V GS=10 V, I D=60 A, SMD version - 5.3 6.7 Drain-source on-state resistance Rev. 1.0 RDS(on) page 2 mΩ 2005-12-27 IPB80N06S2L-07 IPP80N06S2L-07 Parameter Symbol Values Conditions Unit min. typ. max. - 3160 - - 740 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 210 - Turn-on delay time t d(on) - 18 - Rise time tr - 35 - Turn-off delay time t d(off) - 28 - Fall time tf - 31 - Gate to source charge Q gs - 11 14 Gate to drain charge Q gd - 32 48 Gate charge total Qg - 95 130 Gate plateau voltage V plateau - 3.5 - V - - 80 A - - 320 V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=80 A, R G=2 Ω pF ns Gate Charge Characteristics2) V DD=44 V, I D=80 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.9 1.3 V Reverse recovery time2) t rr V R=30 V, I F=I S, di F/dt =100 A/µs - 59 75 ns Reverse recovery charge2) Q rr - 80 100 nC T C=25 °C 1) Current is limited by bondwire; with an R thJC = 0.7 K/W the chip is able to carry 121 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2005-12-27 IPB80N06S2L-07 IPP80N06S2L-07 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 4 V I D = f(T C); V GS ≥ 10 V 100 200 80 150 60 I D [A] P tot [W] 250 100 40 50 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 0.5 1 µs 10 µs 100 10-1 100 µs I D [A] Z thJC [K/W] 1 ms 0.05 10-2 10 0.1 0.01 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-7 page 4 2005-12-27 IPB80N06S2L-07 IPP80N06S2L-07 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 300 16 10 V 3.5 V 3V 14 250 12 4V R DS(on) [mΩ] I D [A] 200 150 10 4V 8 4.5 V 3.5 V 100 6 10 V 50 4 3V 2.5 V 0 0 2 4 2 6 8 10 0 20 40 60 80 100 120 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. Forward transconductance I D = f(V GS); V DS = 6V g fs = f(I D); T j = 25°C parameter: T j parameter: g fs 200 250 180 160 200 140 150 g fs [S] I D [A] 120 100 80 100 60 40 50 175 °C 20 25 °C -55 °C 0 0 1 2 3 4 Rev. 1.0 0 50 100 150 200 I D [A] V GS [V] page 5 2005-12-27 IPB80N06S2L-07 IPP80N06S2L-07 10 Typ. gate threshold voltage R DS(ON) = f(T j) V GS(th) = f(T j); V GS = V DS parameter: I D = 80 A; VGS = 10 V parameter: I D 12 2.5 10 2 8 1.5 750 µA V GS(th) [V] R DS(on) [mΩ] 9 Typ. Drain-source on-state resistance 6 4 150 µA 1 0.5 2 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(VSD) parameter: T j 104 103 Ciss I F [A] C [pF] 102 Coss 103 175 °C 101 25 °C Crss 102 100 0 5 10 15 20 25 30 V DS [V] Rev. 1.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] page 6 2005-12-27 IPB80N06S2L-07 IPP80N06S2L-07 13 Typical avalanche energy 14 Typ. gate charge E AS = f(T j) V GS = f(Q gate); I D = 80 A pulsed parameter: I D 800 12 50 A 700 11 V 44 V 10 600 60 A 8 500 V GS [V] E AS [mJ] 80 A 400 6 300 4 200 2 100 0 0 0 50 100 150 200 0 20 40 T j [°C] 60 80 100 120 Q gate [nC] 15 Typ. drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) = f(T j); I D = 1 mA 66 64 V GS Qg 62 V BR(DSS) [V] 60 58 56 54 52 50 Q gate 48 Q gs Q gd 46 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 7 2005-12-27 IPB80N06S2L-07 IPP80N06S2L-07 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2005-12-27