IPB80N08S2L-07
IPP80N08S2L-07
OptiMOS™ Power-Transistor
Product Summary
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
V DS
75
V
R DS(on),max (SMD version)
6.8
mW
ID
80
A
• 175°C operating temperature
PG-TO263-3-2
• Green package (lead free)
PG-TO220-3-1
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Ordering Code
Marking
IPB80N08S2L-07
PG-TO263-3-2
SP0002-19051
2N08L07
IPP80N08S2L-07
PG-TO220-3-1
SP0002-19050
2N08L07
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
Value
T C=25 °C, V GS=10 V1)
80
T C=100 °C,
V GS=10 V2)
Unit
A
80
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse2)
E AS
I D=80A
810
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
300
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.1
55/175/56
page 1
2014-03-07
IPB80N08S2L-07
IPP80N08S2L-07
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
0.5
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
75
-
-
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1.2
1.6
2.0
Zero gate voltage drain current
I DSS
V DS=75 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=75 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=80 A
-
6.6
9
mW
V GS=4.5 V, I D=80 A,
SMD version
-
6.3
8.7
V GS=10 V, I D=80 A
-
5.1
7.1
V GS=10 V, I D=80 A,
SMD version
-
4.8
6.8
Drain-source on-state resistance
Rev. 1.1
RDS(on)
page 2
mΩ
2014-03-07
IPB80N08S2L-07
IPP80N08S2L-07
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
5400
-
-
1300
-
Dynamic characteristics2)
pF
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
590
-
Turn-on delay time
t d(on)
-
19
-
Rise time
tr
-
55
-
Turn-off delay time
t d(off)
-
85
-
Fall time
tf
-
22
-
Gate to source charge
Q gs
-
18
23
Gate to drain charge
Q gd
-
69
83
Gate charge total
Qg
-
183
233
Gate plateau voltage
V plateau
-
3.4
-
V
-
-
80
A
-
-
320
-
0.9
1.3
V
-
95
120
ns
-
240
300
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=40 V, V GS=10 V,
I D=80 A, R G=1.1 W
ns
Gate Charge Characteristics2)
V DD=60 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time2)
t rr
Reverse recovery charge2)
Q rr
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
V R=40 V, I F=I S,
di F/dt =100 A/µs
1)
Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 135A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2014-03-07
IPB80N08S2L-07
IPP80N08S2L-07
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 4 V
I D = f(T C); V GS ≥ 10 V
350
80
300
250
200
I D [A]
P tot [W]
60
150
40
100
20
50
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
100
1000
1 µs
0.5
10 µs
100 µs
1 ms
10-1
0.1
I D [A]
Z thJC [K/W]
100
0.05
10
10-2
1
-3
0.01
single pulse
10
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.1
10-7
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2014-03-07
IPB80N08S2L-07
IPP80N08S2L-07
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
300
20
10 V
5V
3V
4.5 V
3.5 V
4.5 V
4V
18
250
16
R DS(on) [mW]
200
I D [A]
4V
150
14
12
10
100
3.5 V
8
5V
50
6
3V
10 V
2.5 V
0
4
0
2
4
6
0
100
200
300
400
150
200
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. Forward transconductance
I D = f(V GS); V DS = 6V
g fs = f(I D); T j = 25°C
parameter: T j
parameter: g fs
400
250
200
300
g fs [S]
I D [A]
150
200
100
100
50
175 °C
25 °C
-55 °C
0
0
1
2
3
4
0
Rev. 1.1
50
100
I D [A]
V GS [V]
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IPB80N08S2L-07
IPP80N08S2L-07
9 Typ. Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(ON) = f(T j)
V GS(th) = f(T j); V GS = V DS
parameter: I D = 80 A; VGS = 10 V
parameter: I D
12
2.5
10
2
8
1.5
V GS(th) [V]
R DS(on) [mW]
1250µA
6
4
250µA
1
0.5
2
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(V DS); V GS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
104
103
Ciss
102
I F [A]
C [pF]
Coss
103
175 °C
Crss
25 °C
101
102
100
0
5
10
15
20
25
30
V DS [V]
Rev. 1.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
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2014-03-07
IPB80N08S2L-07
IPP80N08S2L-07
13 Typical avalanche energy
14 Typ. gate charge
E AS = f(T j)
V GS = f(Q gate); I D = 80 A pulsed
parameter: I D
parameter: V DD
3500
12
20 A
15V
3000
60V
10
2500
8
V GS [V]
E AS [mJ]
2000
40 A
1500
6
4
1000
80 A
2
500
0
0
25
75
125
0
175
40
80
120
160
200
Q gate [nC]
T j [°C]
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS) = f(T j); I D = 1 mA
86
V GS
Qg
V BR(DSS) [V]
81
76
71
Q gate
Q gs
Q gd
66
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.1
page 7
2014-03-07
IPB80N08S2L-07
IPP80N08S2L-07
Published by
Infineon Technologies AG
Am Campeon 1-12
D-85579 Neubiberg
© Infineon Technologies AG 2014
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 8
2014-03-07
IPB80N08S2L-07
IPP80N08S2L-07
Revision History
Version
Date
Changes
Revision 1.0
03.03.2006 Final Data Sheet
Revision 1.1
07.03.2014 SOA extended
Rev. 1.1
page 9
2014-03-07