IPB90R340C3ATMA2

IPB90R340C3 CoolMOS™ Power Transistor Product Summary Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated VDS @ TJ=25°C 900 V RDS(on),max @TJ=25°C 0.34 W 94 nC Qg,typ • High peak current capability • Qualified according to JEDEC1) for industrial applications PG-TO263 • Pb-free lead plating; RoHS compliant • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologies • SMPS • PC Silverbox • Lighting • Solar Type Package Marking IPB90R340C3 PG-TO263 9R340C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 15 T C=100 °C 9.5 Pulsed drain current 2) I D,pulse T C=25 °C 34 Avalanche energy, single pulse E AS I D=3.1 A, V DD=50 V 678 Avalanche energy, repetitive t AR 2),3) E AR I D=3.1 A, V DD=50 V 1 Avalanche current, repetitive t AR 2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T J, T stg Rev. 2.0 Unit A mJ 3.1 A V DS=0...400 V 50 V/ns static ±20 V AC (f>1 Hz) ±30 T C=25 °C 208 W -55 ... 150 °C page 1 2012-04-16 IPB90R340C3 Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Continuous diode forward current IS Diode pulse current 2) Reverse diode dv /dt 4) Parameter Value Conditions Unit 9.2 A T C=25 °C I S,pulse 34 dv /dt 4 V/ns Values Unit Symbol Conditions min. typ. max. - - 0.6 - - 62 - 35 - - - 260 °C V Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient R thJA SMD version, device on PCB: at minimum footprint SMD version, device on PCB: at 6 cm² cooling area Soldering temperature, only reflow soldering allowed; part not qualified for direct wave soldering but bottom side PCB wave soldering is allowed T sold K/W 5) reflow MSL1 Electrical characteristics, at T J=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 900 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=900 V, V GS=0 V, T j=25 °C - - 2 V DS=900 V, V GS=0 V, T j=150 °C - 20 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.2 A, T j=25 °C - 0.28 0.34 W V GS=10 V, I D=9.2 A, T j=150 °C - 0.76 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 2.0 RG page 2 W 2012-04-16 IPB90R340C3 Parameter Values Symbol Conditions Unit min. typ. max. - 2400 - - 120 - - 71 - - 280 - - 70 - - 20 - - 400 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related 6) V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 500 V pF Effective output capacitance, time related 7) C o(tr) Turn-on delay time t d(on) Rise time tr Turn-off delay time t d(off) Fall time tf - 25 - Gate to source charge Q gs - 11 - Gate to drain charge Q gd - 41 - Gate charge total Qg - 94 - Gate plateau voltage V plateau - 4.6 - V - 0.8 1.2 V - 510 - ns - 11 - µC - 41 - A V DD=400 V, V GS=10 V, I D=9.2A, R G=23.1 W ns Gate Charge Characteristics V DD=400 V, I D=9.2 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=9.2 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T J,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak