IPBE65R075CFD7AATMA1

IPBE65R075CFD7A MOSFET 650VCoolMOSªCFD7ASJPowerDevice D²-PAK7pin 650VCoolMOS™CFD7AisInfineon'slatestgenerationofmarketleading automotivequalifiedhighvoltageCoolMOS™MOSFETs.Inadditiontothe well-knownattributesofhighqualityandreliabilityrequiredbythe automotiveindustry,thenewCoolMOS™CFD7Aseriesprovidesforan integratedfastbodydiodeandcanbeusedforPFCandresonant switchingtopologiesliketheZVSphase-shiftfull-bridgeandLLC. tab 1 Features 2 3 45 6 7 •Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr •LowestFOMRDS(on)*QgandRDS(on)*Eoss •100%avalanchetested •Kelvinsourcecontactavailable •Best-in-classRDS(on)inSMDandTHDpackages Drain tab Gate Pin 1 Benefits •Optimizedforhigherbatteryvoltagesupto475Vthankstofurther improvedrobustness •Lowerswitchinglossesenablinghigherswitchingfrequencies •Highqualityandreliability •Advancedcontrollabilityduetokelvinsource •Increasedpackagecreepagedistance •Increasedefficiencyinlightloadandfullloadconditions *1: Internal body diode *1 Power Source Pin 3-7 Driver Source Pin 2 Potentialapplications SuitableforPFCandDC-DCstagesfor: •UnidirectionalandbidirectionalDC-DCconverters, •On-BoardbatteryChargers Productvalidation QualifiedaccordingtoAECQ101 Pleasenote:Thesourceandsensesourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction.Forproductionpartapproval process(PPAP)releaseweproposetoshareapplicationrelated informationduringanearlydesignphasetoavoiddelaysinPPAPrelease. PleasecontactInfineonsalesoffice. Table1KeyPerformanceParameters Parameter Value Unit VDS 650 V RDS(on),max 75 mΩ Qg,typ 68 nC ID,pulse 139 A Eoss @ 400V 8.8 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package IPBE65R075CFD7A PG-TO263-7-11 Final Data Sheet 1 Marking RelatedLinks 65A075F7 see Appendix A Rev.2.2,2021-11-24 650VCoolMOSªCFD7ASJPowerDevice IPBE65R075CFD7A TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.2,2021-11-24 650VCoolMOSªCFD7ASJPowerDevice IPBE65R075CFD7A 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 32 20 A TC=25°C TC=100°C - 139 A TC=25°C - - 164 mJ ID=5.1A; VDD=50V; see table 10 IAS - - 5.1 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGSk,pulse -30 - 30 V frepetition