IPC100N04S4-02
OptiMOSTM-T2 Power-Transistor
Product Summary
VDS
40
V
RDS(on)
2.4
m
ID
100
A
Features
• N-channel - Enhancement mode
PG-TDSON-8-23
• AEC qualified
• MSL1 up to 260°C peak reflow
• Green product (RoHS compliant)
1
• 100% Avalanche tested
1
• Feasible for automatic optical inspection (AOI)
Type
Package
Marking
IPC100N04S4-02
PG-TDSON-8-23
4N0402
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
T C=25°C,
T J =175°C,
V GS=10V
1001)
A
T C=100 °C,
T J =175°C,
V GS=10 V
891, 2)
Conditions
Pulsed drain current2)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse4)
E AS
I D=50 A
315
mJ
Avalanche current, single pulse
I AS
-
100
A
Gate source voltage
V GS
-
+/-20
V
Power dissipation
P tot
T C=25 °C,
T J =175°C
150
W
Operating and storage temperature
T j, T stg
-
-55 ... +1753)
°C
Rev. 1.0
page 1
2015-05-22
IPC100N04S4-02
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
-
1
K/W
V
Thermal characteristics
Thermal resistance, junction - case
R thJC
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D= 80µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
20
V DS=18 V, V GS=0 V,
T j=85 °C2)
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D= 50A
-
2.2
2.4
m
Rev. 1.0
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2015-05-22
IPC100N04S4-02
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
6210
8100
-
1400
1830
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
50
115
Turn-on delay time
t d(on)
-
20
-
Rise time
tr
-
9
-
Turn-off delay time
t d(off)
-
23
-
Fall time
tf
-
19
-
Gate to source charge
Q gs
-
34
44
Gate to drain charge
Q gd
-
11
26
Gate charge total
Qg
-
79
105
Gate plateau voltage
V plateau
-
5.5
-
V
-
-
100
A
-
-
400
-
0.9
1.3
V
-
50
-
ns
-
55
-
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=100 A, R G=3.5
pF
ns
Gate Charge Characteristics2)
V DD=32 V, I D=100 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time2)
t rr
Reverse recovery charge2)
Q rr
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=20 V, I F=50A,
di F/dt =100 A/µs
1)
Current is limited by package; with an R thJC = 1K/W the chip is able to carry 191A at 25°C.
2)
Defined by design. Not subject to production test.
3)
T J > 150°C is limited to 200h operation time over life time of the device
Rev. 1.0
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IPC100N04S4-02
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS = 10 V
175
120
150
100
125
100
ID [A]
Ptot [W]
80
60
75
40
50
20
25
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
10 µs
100
100 µs
0.5
ZthJC [K/W]
100
ID [A]
150 µs
0.05
10
0.01
10-2
1
single pulse
10-3
0.1
1
10
100
VDS [V]
Rev. 1.0
0.1
10-1
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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2015-05-22
IPC100N04S4-02
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
14
400
10 V
12
7V
5V
300
10
RDS(on) [m]
ID [A]
6.5 V
200
6V
8
6
5.5 V
4
100
6V
6.5 V
5.5 V
7V
10 V
2
5V
0
0
0
1
2
3
0
4
25
50
75
100
ID [A]
VDS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
parameter: T j
400
4
350
3.5
300
RDS(on) [m]
ID [A]
250
200
150
3
2.5
100
2
175 °C
25 °C
50
-55 °C
1.5
0
3
4
5
6
-60
7
20
60
100
140
180
Tj [°C]
VGS [V]
Rev. 1.0
-20
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2015-05-22
IPC100N04S4-02
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
Ciss
3.75
3.5
Coss
3.25
800 µA
103
2.75
C [pF]
VGS(th) [V]
3
80 µA
2.5
2.25
102
2
Crss
1.75
1.5
1.25
101
1
-60
-20
20
60
100
140
0
180
5
10
15
20
25
30
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I AS = f(t AV)
parameter: T j
parameter: Tj(start)
103
1000
102
100
25 °C
IF [A]
IAV [A]
100 °C
175 °C
150 °C
25 °C
10
101
1
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD [V]
Rev. 1.0
1
10
100
1000
tAV [µs]
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IPC100N04S4-02
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
52
700
600
48
500
VBR(DSS) [V]
EAS [mJ]
25 A
400
300
200
44
40
50 A
36
100
100 A
32
0
25
75
125
-60
175
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 180 A pulsed
parameter: V DD
10
V GS
9
Qg
8
8V
32 V
7
VGS [V]
6
5
4
3
2
Q gate
1
Q gs
Q gd
0
0
40
80
Qgate [nC]
Rev. 1.0
page 7
2015-05-22
IPC100N04S4-02
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2015-05-22
IPC100N04S4-02
Revision History
Version
Date
Changes
Revision 1.0
Rev. 1.0
2015-05-22 Final Data Sheet
page 9
2015-05-22