IPC100N04S5-2R8

IPC100N04S5-2R8 OptiMOS™-5 Power-Transistor Product Summary VDS 40 V RDS(on),max 2.8 mW ID 100 A Features • OptiMOS™ - power MOSFET for automotive applications PG-TDSON-8-33 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature 1 • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPC100N04S5-2R8 PG-TDSON-8-33 5N042R8 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25°C, V GS=10V 100 T C=100°C, V GS=10V2) 85 Unit A Pulsed drain current2) I D,pulse T C=25°C 400 Avalanche energy, single pulse2) E AS I D=50A 66 mJ Avalanche current, single pulse4) I AS - 100 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 75 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2016-12-06 IPC100N04S5-2R8 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 2 Thermal resistance, junction ambient R thJA 6 cm2 cooling area3) - - 50 40 - - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA Gate threshold voltage V GS(th) V DS=V GS, I D=30µA 2.2 2.8 3.4 Zero gate voltage drain current I DSS V DS=40V, V GS=0V, T j=25°C - - 1 - - 100 V DS=40V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=7V, I D=50A - 2.8 3.4 mW V GS=10V, I D=50A - 2.3 2.8 Rev. 1.0 page 2 2016-12-06 IPC100N04S5-2R8 Parameter Symbol Values Conditions Unit min. typ. max. - 2000 2600 - 550 730 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 30 45 Turn-on delay time t d(on) - 6 - Rise time tr - 3 - Turn-off delay time t d(off) - 11 - Fall time tf - 6 - Gate to source charge Q gs - 9 12 Gate to drain charge Q gd - 7.6 11.4 Gate charge total Qg - 34 45 Gate plateau voltage V plateau - 4.8 - V - - 100 A - - 400 V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=100A, R G,ext=3.5W pF ns Gate Charge Characteristics2) V DD=32V, I D=100A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=50A, T j=25°C - 0.8 1.1 V Reverse recovery time2) t rr V R=20V, I F=50A, di F/dt =100A/µs - 45 - ns Reverse recovery charge2) Q rr - 35 - nC T C=25°C 1) Current is limited by package; with an R thJC = 2 K/W the chip is able to carry 120A at 25°C. 2) The parameter is not subject to production test- verified by design/characterization. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) The device is tested in production with an avalanche current of 85 A. Rev. 1.0 page 3 2016-12-06 IPC100N04S5-2R8 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 80 110 100 70 90 60 80 70 ID [A] Ptot [W] 50 40 30 60 50 40 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 0.5 100 100 0.1 ZthJC [K/W] ID [A] 100 µs 150 µs 0.1-1 10 0.05 0.01 10 single pulse 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2016-12-06 IPC100N04S5-2R8 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 400 12 10 V 350 4.5 V 7V 10 5V 300 8 5.5 V 5.5 V RDS(on) [mΩ] ID [A] 250 200 150 6 4 5V 100 7V 10 V 2 50 4.5 V 0 0 1 2 0 3 0 100 200 VDS [V] 300 400 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 50 A; V GS = 10 V parameter: T j 400 5 350 300 4 RDS(on) [mW] ID [A] 250 200 150 100 2 50 175 °C -55 °C 25 °C 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS [V] Rev. 1.0 3 1 -60 -20 20 60 100 140 180 Tj [°C] page 5 2016-12-06 IPC100N04S5-2R8 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 Ciss 3 VGS(th) [V] 2.5 30 µA Coss 103 C [pF] 300 µA 2 1.5 102 Crss 1 0.5 101 0 -60 -20 20 60 100 140 0 180 10 11 Typical forward diode characteristics 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 102 100 175 °C IAV [A] 1000 IF [A] 103 101 25 °C 150 °C 100 °C 100 1000 25 °C 25 °C 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 30 VDS [V] Tj [°C] 175 °C 20 1 1 10 tAV [µs] page 6 2016-12-06 IPC100N04S5-2R8 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA 46 150 125 44 25 A VBR(DSS) [V] EAS [mJ] 100 75 42 40 50 A 50 38 25 100 A 36 0 25 75 125 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 100 A pulsed parameter: V DD 10 V GS 9 Qg 8 8V 7 32 V VGS [V] 6 5 V gs(th) 4 3 2 Q g(th) Q sw Q gate 1 Q gs 0 0 5 10 15 20 25 30 Q gd 35 Qgate [nC] Rev. 1.0 page 7 2016-12-06 IPC100N04S5-2R8 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2016 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2016-12-06 IPC100N04S5-2R8 Revision History Version Date Changes 06.12.2016 Final Data Sheet Revision 1.0 Rev. 1.0 page 9 2016-12-06