IPC60N04S406ATMA1

IPC60N04S4-06 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 6.0 m ID 60 A Features • N-channel - Enhancement mode PG-TDSON-8-23 • AEC qualified • MSL1 up to 260°C peak reflow • Green product (RoHS compliant) 1 • 100% Avalanche tested 1 • Feasible for automatic optical inspection (AOI) Type Package Marking IPC60N04S4-06 PG-TDSON-8-23 4N0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, T J =175°C, V GS=10V 601) T C=100 °C, T J =175°C, V GS=10 V 581, 2) Unit A Pulsed drain current2) I D,pulse T C=25 °C 240 Avalanche energy, single pulse E AS I D=30 A 120 mJ Avalanche current, single pulse I AS - 60 A Gate source voltage V GS - +/-20 V Power dissipation P tot T C=25 °C, T J =175°C 63 W Operating and storage temperature T j, T stg - -55 ... +1753) °C Rev. 1.0 page 1 2015-05-22 IPC60N04S4-06 Parameter Symbol Values Conditions Unit min. typ. max. - - 2.4 Thermal characteristics Thermal resistance, junction - case R thJC - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D= 30µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.01 1 T j=85 °C2) - 1 20 V DS=18 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D= 30A - 5.4 6.0 m Rev. 1.0 page 2 2015-05-22 IPC60N04S4-06 Parameter Symbol Values Conditions Unit min. typ. max. - 2040 2650 - 510 660 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 16 37 Turn-on delay time t d(on) - 6 - Rise time tr - 5 - Turn-off delay time t d(off) - 6 - Fall time tf - 6 - Gate to source charge Q gs - 12 15 Gate to drain charge Q gd - 4 8 Gate charge total Qg - 25 33 Gate plateau voltage V plateau - 5.8 - V - - 60 A - - 240 - 0.9 1.3 V - 45 - ns - 45 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=60 A, R G=3.5  pF ns Gate Charge Characteristics2) V DD=32 V, I D=60 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=30 A, T j=25 °C V R=20 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by package; with an R thJC = 2.4 K/W the chip is able to carry 78 A at 25°C. 2) Defined by design. Not subject to production test. 3) T J > 150°C is limited to 200h operation time over life time of the device Rev. 1.0 page 3 2015-05-22 IPC60N04S4-06 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 70 70 60 60 50 50 40 40 ID [A] Ptot [W] 1 Power dissipation 30 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 0.5 100 10 µs 100 ZthJC [K/W] 100 µs ID [A] 150 µs 0.1 0.05 10-1 0.01 10 single pulse 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2015-05-22 IPC60N04S4-06 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 240 10 V 34 200 5.5 V 5V 160 RDS(on) [m] ID [A] 7V 120 6.5 V 24 5.5 V 80 14 6V 40 6.5 V 5.5 V 7V 5V 10 V 4 0 0 1 2 3 0 4 30 60 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 30 A; V GS = 10 V parameter: T j 10 240 9 200 8 RDS(on) [m] ID [A] 160 120 7 6 80 5 40 4 175 °C 25 °C -55 °C 3 0 3 4 5 6 7 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2015-05-22 IPC60N04S4-06 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.8 3.6 Ciss 3.4 3.2 103 300 µA Coss 2.8 2.6 C [pF] VGS(th) [V] 3 30 µA 2.4 2.2 102 2 1.8 1.6 Crss 1.4 101 1.2 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 100 103 25 °C 100 °C 102 IF [A] IAV [A] 150 °C 101 175 °C 25 °C 0.6 0.8 1 100 0 0.2 0.4 1 1.2 1.4 1 VSD [V] Rev. 1.0 10 10 100 1000 tAV [µs] page 6 2015-05-22 IPC60N04S4-06 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 52 240 15 A 48 VBR(DSS) [V] EAS [mJ] 180 120 30 A 44 40 60 36 60 A 32 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 60 A pulsed parameter: V DD 10 8V 9 32 V V GS Qg 8 7 VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 10 20 30 Qgate [nC] Rev. 1.0 page 7 2015-05-22 IPC60N04S4-06 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2015 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2015-05-22 IPC60N04S4-06 Revision History Version Date Changes Revision 1.0 Rev. 1.0 2015-05-22 Final Data Sheet page 9 2015-05-22