IPD029N04NF2SATMA1

IPD029N04NF2S MOSFET StrongIRFETTM2Power-Transistor D-PAK Features tab •Optimizedforwiderangeofapplications •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 1 3 Productvalidation QualifiedaccordingtoJEDECStandard Drain Pin 2, Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 2.9 mΩ ID 131 A Qoss 49 nC QG(0V..10V) 45 nC Gate Pin 1 Source Pin 3 Type/OrderingCode Package IPD029N04NF2S PG-TO252-3 Final Data Sheet 1 Marking RelatedLinks 029N04NS - Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 131 100 24 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C, RTHJA=50°C/W2) - 524 A TC=25°C - - 71 mJ ID=70A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 107 3.0 W TC=25°C TA=25°C,RthJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1.4 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area2) - - 50 °C/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 75 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.4 V VDS=VGS,ID=53µA - 0.1 10 1.0 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.4 2.9 2.9 4.1 mΩ VGS=10V,ID=70A VGS=6V,ID=35A Gate resistance RG - 2.5 - Ω - gfs 105 - - S |VDS|≥2|ID|RDS(on)max,ID=70A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current 1) Transconductance Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 3200 - pF VGS=0V,VDS=20V,f=1MHz Output capacitance Coss - 1160 - pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 69 - pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 14 - ns VDD=20V,VGS=10V,ID=70A, RG,ext=1.6Ω Rise time tr - 9 - ns VDD=20V,VGS=10V,ID=70A, RG,ext=1.6Ω Turn-off delay time td(off) - 26 - ns VDD=20V,VGS=10V,ID=70A, RG,ext=1.6Ω Fall time tf - 10 - ns VDD=20V,VGS=10V,ID=70A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 13.9 - nC VDD=20V,ID=70A,VGS=0to10V Gate charge at threshold Qg(th) - 8.8 - nC VDD=20V,ID=70A,VGS=0to10V Gate to drain charge Qgd - 8.6 - nC VDD=20V,ID=70A,VGS=0to10V Switching charge Qsw - 13.7 - nC VDD=20V,ID=70A,VGS=0to10V Gate charge total Qg - 45 68 nC VDD=20V,ID=70A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=20V,ID=70A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 40 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 49 - nC VDS=20V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 95 A TC=25°C - 524 A TC=25°C - 0.89 1.1 V VGS=0V,IF=70A,Tj=25°C trr - 26 - ns VR=20V,IF=70A,diF/dt=500A/µs Qrr - 89 - nC VR=20V,IF=70A,diF/dt=500A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 120 140 120 100 100 80 ID[A] Ptot[W] 80 60 60 40 40 20 0 20 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 100 µs single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 ms 1 ZthJC[K/W] ID[A] 10 10 ms 100 10-1 DC 10-2 -1 10 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 550 6.0 10 V 500 7V 6V 5.5 4.5 V 450 5.0 400 5V 5.5 V 4.5 RDS(on)[mΩ] ID[A] 350 300 250 200 5V 4.0 3.5 5.5 V 150 3.0 6V 100 50 0 0.0 0.5 1.0 1.5 2.0 7V 2.5 4.5 V 2.5 2.0 3.0 10 V 0 50 100 VDS[V] 150 200 ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 550 7.0 25 °C 500 6.5 450 6.0 400 175 °C 5.5 RDS(on)[mΩ] ID[A] 350 300 250 200 5.0 4.5 175 °C 4.0 3.5 150 3.0 100 2.5 50 0 250 ID[A] 0 1 2 3 4 5 6 7 VGS[V] 3 6 9 12 15 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 2.0 25 °C RDS(on)=f(VGS),ID=70A;parameter:Tj 7 Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 1.8 3.5 3.0 1.4 2.5 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 1.2 530 µA 2.0 53 µA 1.0 1.5 0.8 0.6 -75 -50 -25 0 25 50 75 1.0 -75 100 125 150 175 200 -50 -25 0 25 Tj[°C] 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=70A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Typ.forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 10 20 30 40 100 0.2 0.4 0.6 VDS[V] 1.0 1.2 1.4 1.6 1.8 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8V 20 V 32 V 9 25 °C 8 7 101 100 °C VGS[V] IAV[A] 6 150 °C 5 4 0 10 3 2 1 10-1 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=70Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 45 44 43 VBR(DSS)[V] 42 41 40 39 38 37 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S 5PackageOutlines DIM A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 MILLIMETERS MIN 2.16 0.00 0.64 0.65 4,95 0.46 0.40 5.97 5.02 6.35 4.32 MAX 2.41 0.15 0.89 1.15 5.50 0.61 0.98 6.22 5.84 6.73 5.21 2.29 (BSC) 4.57 (BSC) MIN 0.085 0.000 0.025 0.026 0.195 0.018 0.016 0.235 0.198 0.250 0.185 3 9.40 1.18 0.89 0.51 10.48 1.78 1.27 1.02 DOCUMENT NO. Z8B00003328 INCHES 0.370 0.046 0.035 0.020 MAX 0.095 0.006 0.035 0.045 0.217 0.024 0.039 0.245 0.230 0.265 0.205 0.090 (BSC) 0.180 (BSC) 3 0.413 0.070 0.050 0.040 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 05-02-2016 REVISION 06 Figure1OutlinePG-TO252-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2022-07-13 StrongIRFETTM2Power-Transistor IPD029N04NF2S RevisionHistory IPD029N04NF2S Revision:2022-07-13,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2022-07-13 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2022-07-13