IPD033N06NATMA1

IPD033N06N MOSFET OptiMOSTMPower-Transistor,60V D-PAK Features •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 tab 1 2 3 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 3.3 mΩ ID 90 A QOSS 44 nC QG(0V..10V) 38 nC Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPD033N06N PG-TO252-3 033N06N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-09-12 OptiMOSTMPower-Transistor,60V IPD033N06N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2016-09-12 OptiMOSTMPower-Transistor,60V IPD033N06N 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 90 90 22 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W - 360 A TC=25°C - - 60 mJ ID=90A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 107 3.0 W TC=25°C TA=25°C,RthJA=50K/W Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse2) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.8 1.4 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm² cooling area3) RthJA - - 40 K/W - Soldering temperature, wave and reflow soldering are allowed Tsold - - 260 °C Reflow MSL1 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2016-09-12 OptiMOSTMPower-Transistor,60V IPD033N06N 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=50µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.0 4.1 3.3 5.0 mΩ VGS=10V,ID=90A VGS=6V,ID=22.5A Gate resistance1) RG - 1.2 1.8 Ω - Transconductance gfs 65 130 - S |VDS|>2|ID|RDS(on)max,ID=90A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 2700 3400 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 670 840 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 28 56 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 10 - ns VDD=30V,VGS=10V,ID=90A, RG,ext,ext=1.6Ω Rise time tr - 5 - ns VDD=30V,VGS=10V,ID=90A, RG,ext,ext=1.6Ω Turn-off delay time td(off) - 20 - ns VDD=30V,VGS=10V,ID=90A, RG,ext,ext=1.6Ω Fall time tf - 5 - ns VDD=30V,VGS=10V,ID=90A, RG,ext,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 14 - nC VDD=30V,ID=90A,VGS=0to10V Qg(th) - 8 - nC VDD=30V,ID=90A,VGS=0to10V Gate to drain charge Qgd - 7 10 nC VDD=30V,ID=90A,VGS=0to10V Switching charge Qsw - 13 - nC VDD=30V,ID=90A,VGS=0to10V Gate charge total Qg - 38 44 nC VDD=30V,ID=90A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=30V,ID=90A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 33 - nC VDS=0.1V,VGS=0to10V Qoss - 44 59 nC VDD=30V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2016-09-12 OptiMOSTMPower-Transistor,60V IPD033N06N Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Unit Note/TestCondition 89 A TC=25°C - 360 A TC=25°C - 0.9 1.2 V VGS=0V,IF=45A,Tj=25°C trr - 39 63 ns VR=30V,IF=89A,diF/dt=100A/µs Qrr - 45 - nC VR=30V,IF=89A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Reverse recovery time Reverse recovery charge Diode forward voltage 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.0,2016-09-12 OptiMOSTMPower-Transistor,60V IPD033N06N 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 120 100 100 80 80 ID[A] Ptot[W] 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 0.2 ZthJC[K/W] ID[A] 100 µs 0.5 101 1 ms 0.1 10-1 0.05 0.02 0.01 100 single pulse 10-2 10 ms DC -1 10 10-1 100 101 102 10-3 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2016-09-12 OptiMOSTMPower-Transistor,60V IPD033N06N Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 360 10 10V 6V 5.5 V 8 280 7 240 6V RDS(on)[mΩ] ID[A] 5V 9 320 200 160 5.5 V 120 80 5V 40 0 4.5 V 7V 0.5 1.0 1.5 2.0 2.5 5 4 7V 3 10 V 2 1 4.5 V 0.0 6 0 3.0 0 40 80 120 160 VDS[V] 200 240 280 320 360 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 360 150 320 125 280 100 200 gfs[S] ID[A] 240 160 120 75 50 80 25 40 175 °C 0 0 2 25 °C 4 6 8 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.0,2016-09-12 OptiMOSTMPower-Transistor,60V IPD033N06N Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 6.5 5 6.0 5.5 4 5.0 4.5 typ max 3 VGS(th)[V] RDS(on)[mΩ] 4.0 3.5 3.0 2.5 500 µA 50 µA 2 2.0 1.5 1 1.0 0.5 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=90A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 175°C max 25°C max Ciss IF[A] 102 C[pF] 103 Coss 102 101 Crss 1 10 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.0,2016-09-12 OptiMOSTMPower-Transistor,60V IPD033N06N Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 8 30 V 7 25 °C VGS[V] IAV[A] 101 100 °C 48 V 12 V 6 5 4 3 2 125 °C 1 100 100 101 102 103 0 0 tAV[µs] 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=90Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 66 64 VBR(DSS)[V] 62 60 58 56 54 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2016-09-12 OptiMOSTMPower-Transistor,60V IPD033N06N 5PackageOutlines Figure1OutlinePG-TO252-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2016-09-12 OptiMOSTMPower-Transistor,60V IPD033N06N RevisionHistory IPD033N06N Revision:2016-09-12,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-09-12 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2016-09-12