IPD068P03L3 G
OptiMOSTM P3 Power-Transistor
Product Summary
Features
VDS
• single P-Channel in DPAK
RDS(on),max
• Qualified according JEDEC1) for target applications
• 175 °C operating temperature
-30
V
VGS = 10V
6.8
mW
VGS = 4.5V
11.0
IDD
-70
A
• 100% Avalanche tested
• Pb-free; RoHS compliant, halogen free
• applications: power management
PG-TO252-3
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
Lead free
Packing
IPD068P03L3 G
PG-TO252-3
068P03L
Yes
non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
-70
T C=100 °C
-70
Unit
A
Pulsed drain current
I D,pulse
T C=25 °C2)
-280
Avalanche energy, single pulse
E AS
I D=-70 A, R GS=25 W
149
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
100
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
ESD class
T C=25 °C
JESD22-A114 HBM
260
Soldering temperature
°C
55/175/56
IEC climatic category; DIN IEC 68-1
1)
tbd
J-STD20 and JESD22
Rev. 2.1
page 1
2014-05-16
IPD068P03L3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.5
-
-
50
Thermal characteristics
Thermal resistance,
junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
6 cm2 cooling area2)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250mA
-30
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-150 µA
-1.0
-1.5
-2.0
Zero gate voltage drain current
I DSS
V DS=-30 V, V GS=0 V,
T j=25 °C
-
-0.1
-1
V DS=-30 V, V GS=0 V,
T j=150 °C
-
-10
-100
V
µA
Gate-source leakage current
I GSS
V GS=-20 V, V DS=0 V
-
-10
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-4.5 V, I D=-45 A
-
7.0
11.0
mW
V GS=-10 V, I D=-70 A
-
5.0
6.8
-
5.8
-
W
50
100
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-70 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2014-05-16
IPD068P03L3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
5150
7720
-
2090
3140
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
160
240
Turn-on delay time
t d(on)
-
11
16.5
Rise time
tr
-
100
150
Turn-off delay time
t d(off)
-
84
126
Fall time
tf
-
31
47
Gate to source charge
Q gs
-
19
25
Gate charge at threshold
Q g(th)
-
8
11
Gate to drain charge
Q gd
-
8
13
Switching charge
Q sw
-
19
27
Gate charge total
Qg
-
68
91
Gate plateau voltage
V plateau
-
3.7
-
Output charge
Q oss
-
48
64
nC
-
-
30
A
-
-
280
V GS=0 V, V DS=-15 V,
f =1 MHz
V DD=-15 V, V GS=10 V, I D=-70 A,
R G,ext=6 W
pF
ns
Gate Charge Characteristics3)
V DD=-15 V, I D=-70 A,
V GS=0 to -10 V
V DD=-15 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
T C=25 °C
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=-70 A,
T j=25 °C
-
-
-1.2
V
Reverse recovery time
t rr
V R=15 V, I F=-70 A,
di F/dt =100 A/µs
-
46
69
ns
Reverse recovery charge
Q rr
-
44
-
nC
Rev. 2.1
page 3
2014-05-16
IPD068P03L3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); |V GS|≥10 V
110
80
100
70
90
60
80
50
60
-ID [A]
Ptot [W]
70
50
40
30
40
30
20
20
10
10
0
0
0
20
40
60
80
100 120 140 160 180
0
20
40
60
TC [°C]
80
100 120 140 160 180
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C1); D =0
Z thJS=f(t p)
parameter: t p
parameter: D =t p/T
103
101
10
1 µs
10 µs
100
102
1
0.5
ZthJS [K/W]
-ID [A]
100 µs
1 ms
10 ms
0.1
0.05
0.02
limited by on-state
resistance
101
0.2
10-1
0.1
0.01
DC
single pulse
10-2
100
0.01
0.00001
10-5
10-1
Rev. 2.1
100
-VDS [V]
101
102
page 4
0.0001
0.001
0.01
0.1
1
10
10-4
10-3
10-2
10-1
100
101
tp [s]
2014-05-16
IPD068P03L3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
70
30
-10 V
-4.5 V
60
-3.5 V
25
50
RDS(on) [mW]
20
-ID [A]
40
-3.2 V
30
-3.0 V
15
-3.2 V
-3.5 V
10
-3.0 V
20
-4.5V
5
10
-10 V
-2.7 V
0
0
0
1
2
3
0
10
20
-VDS [V]
30
40
50
60
70
50
60
70
-ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
70
110
100
60
90
80
50
70
gfs [S]
-ID [A]
40
30
60
50
40
20
30
20
10
150 °C
10
25 °C
0
0
0
1
2
3
4
-VGS [V]
Rev. 2.1
0
10
20
30
40
-ID [A]
page 5
2014-05-16
IPD068P03L3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-70 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-150 mA
12
2.5
10
2
98 %
-VGS(th) [V]
RDS(on) [mW]
8
6
max.
min.
1.5
typ.
1
typ.
4
0.5
2
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
100
Ciss
25 °C, typ
Coss
103
150 °C, 98%
150 °C, typ
IF [A]
C [pF]
10
102
Crss
1
25 °C, 98%
101
0.1
0
10
20
30
0.5
1
1.5
-VSD [V]
-VDS [V]
Rev. 2.1
0
page 6
2014-05-16
IPD068P03L3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=-70 A pulsed
parameter: T j(start)
parameter: V DD
102
10
9
8
-15 V
-6 V
7
25 °C
-24 V
6
-VGS [V]
100 °C
-IAV [A]
101
5
4
125 °C
3
2
1
0
0
100
100
tAV [µs]
101
102
20
60
80
-Qgate [nC]
103
15 Drain-source breakdown voltage
40
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 mA
34
V GS
Qg
-VBR(DSS) [V]
32
30
V gs(th)
28
Q g(th)
Q sw
Q gs
26
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.1
page 7
2014-05-16
IPD068P03L3 G
Package Outline
PG-TO252-3
Dimensions in mm
Rev. 2.1
page 8
2014-05-16
IPD068P03L3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 9
2014-05-16