IPD06P003N
MOSFET
OptiMOSTMPowerTransistor,-60V
D-PAK
Features
•P-Channel
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•NormalLevel
•Enhancementmode
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof
JEDEC47/20/22
tab
1
3
Drain
tab
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
-60
V
RDS(on),max
65
mΩ
ID
-22
A
Gate
Pin 1
Source
Pin 3
Type/OrderingCode
Package
Marking
RelatedLinks
IPD06P003N
PG-TO 252-3
06P003N
-
Final Data Sheet
1
Rev.2.0,2018-05-09
OptiMOSTMPowerTransistor,-60V
IPD06P003N
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.2.0,2018-05-09
OptiMOSTMPowerTransistor,-60V
IPD06P003N
1Maximumratings
atTC=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
-22
-17
A
VGS=-10V,TC=25°C
VGS=-10V,TC=100°C
-
-88
A
TC=25°C
-
-
329
mJ
ID=-22A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
83
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Pulsed drain current1)
2)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Device on PCB,
6 cm² cooling area3)
Values
Min.
Typ.
Max.
RthJC
-
-
1.8
°C/W -
RthJA
-
-
75
°C/W -
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=-250µA
-3
-4
V
VDS=VGS,ID=-1040µA
-
-0.1
-10
1
-100
µA
VDS=-60V,VGS=0V,Tj=25°C
VDS=-60V,VGS=0V,Tj=125°C
IGSS
-
-10
-100
nA
VGS=-20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
52
65
mΩ
VGS=-10V,ID=-22A
Gate resistance
RG
-
5
-
Ω
-
Transconductance
gfs
-
21
-
S
|VDS|≥2|ID|RDS(on)max,ID=-22A
Min.
Typ.
Max.
V(BR)DSS
-60
-
Gate threshold voltage
VGS(th)
-2.1
Zero gate voltage drain current
IDSS
Gate-source leakage current
1)
See Diagram 3 for more detailed information
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
Final Data Sheet
3
Rev.2.0,2018-05-09
OptiMOSTMPowerTransistor,-60V
IPD06P003N
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Unit
Note/TestCondition
-
pF
VGS=0V,VDS=-30V,f=1MHz
220
-
pF
VGS=0V,VDS=-30V,f=1MHz
-
54
-
pF
VGS=0V,VDS=-30V,f=1MHz
td(on)
-
12
-
ns
VDD=-30V,VGS=-10V,ID=-11A,
RG,ext=1.6Ω
Rise time
tr
-
14
-
ns
VDD=-30V,VGS=-10V,ID=-11A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
33
-
ns
VDD=-30V,VGS=-10V,ID=-11A,
RG,ext=1.6Ω
Fall time
tf
-
12
-
ns
VDD=-30V,VGS=-10V,ID=-11A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Min.
Typ.
Max.
Ciss
-
1600
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
Turn-on delay time
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
-9
-
nC
VDD=-30V,ID=-22A,VGS=0to-10V
Gate charge at threshold
Qg(th)
-
-5
-
nC
VDD=-30V,ID=-22A,VGS=0to-10V
Gate to drain charge
Qgd
-
-15
-
nC
VDD=-30V,ID=-22A,VGS=0to-10V
Switching charge
Qsw
-
-19
-
nC
VDD=-30V,ID=-22A,VGS=0to-10V
Gate charge total
Qg
-
-39
-
nC
VDD=-30V,ID=-22A,VGS=0to-10V
Gate plateau voltage
Vplateau
-
-5.5
-
V
VDD=-30V,ID=-22A,VGS=0to-10V
Output charge
Qoss
-
-28
-
nC
VDD=-30V,VGS=0V
Unit
Note/TestCondition
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Min.
Typ.
Max.
IS
-
-
-22
A
TC=25°C
Diode pulse current
IS,pulse
-
-
-88
A
TC=25°C
Diode forward voltage
VSD
-
-0.9
-1.2
V
VGS=0V,IF=-22A,Tj=25°C
Reverse recovery time
trr
-
39
-
ns
VR=-30V,IF=-22A,diF/dt=-100A/µs
Reverse recovery charge
Qrr
-
-83
-
nC
VR=-30V,IF=-22A,diF/dt=-100A/µs
1)
See Diagram ″Gate charge waveforms″ for gate charge parameter definition
Final Data Sheet
4
Rev.2.0,2018-05-09
OptiMOSTMPowerTransistor,-60V
IPD06P003N
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
100
24
90
20
80
70
16
-ID[A]
Ptot[W]
60
50
12
40
8
30
20
4
10
0
0
25
50
75
100
125
150
175
0
200
0
25
50
75
TC[°C]
100
125
150
175
200
TC[°C]
Ptot=f(TC)
ID=f(TC);|VGS|≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
10
101
1 µs
100 µs
1 ms
100
-ID[A]
ZthJA[K/W]
101
100
0.2
0.1
10-1
10 ms
DC
0.5
0.05
0.02
0.01
single pulse
10-1
10-1
100
101
102
10-2
10-5
10-4
-VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
5
Rev.2.0,2018-05-09
OptiMOSTMPowerTransistor,-60V
IPD06P003N
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
60
140
-10 V
-8 V
-7 V
120
50
100
40
30
RDS(on)[mΩ]
-6 V
-ID[A]
-5 V
-4.5 V
-6 V
80
-7 V
-8 V
-10 V
60
20
40
-5 V
10
20
-4.5 V
0
0
1
2
3
4
0
5
0
10
20
-VDS[V]
30
40
50
-ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
30
160
140
25
120
175 °C
20
RDS(on)[mΩ]
-ID[A]
100
15
80
60
25 °C
10
40
5
20
0
175 °C
25 °C
0
1
2
3
4
5
6
7
-VGS[V]
6
7
8
9
10
-VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
0
RDS(on)=f(VGS),ID=-22A;parameter:Tj
6
Rev.2.0,2018-05-09
OptiMOSTMPowerTransistor,-60V
IPD06P003N
Diagram9:Normalizeddrain-sourceonresistance
Diagram10:Typ.gatethresholdvoltage
2.4
3.5
1.6
3.0
-VGS(th)[V]
RDS(on)(normalizedto25°C)
2.0
1.2
0.8
-10400 µA
2.5
0.4
-1040 µA
0.0
-80
-40
0
40
80
120
160
2.0
-80
200
-40
0
40
Tj[°C]
80
120
160
RDS(on)=f(Tj),ID=-22A,VGS=-10V
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
102
10
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
101
C[pF]
103
102
-IF[A]
Coss
101
200
Tj[°C]
100
Crss
0
10
20
30
40
50
60
10-1
0.00
0.25
-VDS[V]
0.75
1.00
1.25
1.50
-VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
7
Rev.2.0,2018-05-09
OptiMOSTMPowerTransistor,-60V
IPD06P003N
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
-12 V
-30 V
-48 V
8
101
25 °C
-VGS[V]
-IAV[A]
6
4
100 °C
2
100
100
101
150 °C
103
102
tAV[µs]
0
0
5
10
15
20
25
30
35
40
-Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=-22Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
68
66
-VBR(DSS)[V]
64
62
60
58
56
-80
-40
0
40
80
120
160
200
Tj[°C]
VBR(DSS)=f(Tj);ID=-250µA
Final Data Sheet
8
Rev.2.0,2018-05-09
OptiMOSTMPowerTransistor,-60V
IPD06P003N
5PackageOutlines
DIM
A
A1
b
b2
b3
c
c2
D
D1
E
E1
e
e1
N
H
L
L3
L4
MILLIMETERS
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
2.29 (BSC)
4.57 (BSC)
MIN
0.085
0.000
0.025
0.026
0.195
0.018
0.016
0.235
0.198
0.250
0.185
3
9.40
1.18
0.89
0.51
10.48
1.78
1.27
1.02
DOCUMENT NO.
Z8B00003328
INCHES
0.370
0.046
0.035
0.020
MAX
0.095
0.006
0.035
0.045
0.217
0.024
0.039
0.245
0.230
0.265
0.205
0.090 (BSC)
0.180 (BSC)
3
0.413
0.070
0.050
0.040
SCALE
0
2.5
0
2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
05-02-2016
REVISION
06
Figure1OutlinePG-TO252-3,dimensionsinmm/inches
Final Data Sheet
9
Rev.2.0,2018-05-09
OptiMOSTMPowerTransistor,-60V
IPD06P003N
RevisionHistory
IPD06P003N
Revision:2018-05-09,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2018-05-09
Release of final version
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Final Data Sheet
10
Rev.2.0,2018-05-09