IPD06P005LATMA1

IPD06P005L MOSFET OptiMOSTMPowerTransistor,-60V D-PAK Features •P-Channel •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •LogicLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 tab 1 3 Drain tab Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 250 mΩ ID -6.5 A Gate Pin 1 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPD06P005L PG-TO 252-3 06P005L - Final Data Sheet 1 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P005L TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P005L 1Maximumratings atTC=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition -6.5 -5.0 -6.4 -4.5 A VGS=-10V,TC=25°C VGS=-10V,TC=100°C VGS=-4.5V,TC=25°C VGS=-4.5V,TC=100°C - -26 A TC=25°C - - 75 mJ ID=-6.5A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 28 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm² cooling area3) Values Min. Typ. Max. RthJC - - 5.3 °C/W - RthJA - - 75 °C/W - 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P005L 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=-250µA -1.5 -2 V VDS=VGS,ID=-270µA - -0.1 -10 1 -100 µA VDS=-60V,VGS=0V,Tj=25°C VDS=-60V,VGS=0V,Tj=125°C IGSS - -10 -100 nA VGS=-20V,VDS=0V Drain-source on-state resistance RDS(on) - 187 230 250 310 mΩ VGS=-10V,ID=-6.5A VGS=-4.5V,ID=-6.4A Gate resistance RG - 5 - Ω - Transconductance gfs - 8.4 - S |VDS|≥2|ID|RDS(on)max,ID=-6.5A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS -60 - Gate threshold voltage VGS(th) -1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 420 - pF VGS=0V,VDS=-30V,f=1MHz Output capacitance Coss - 60 - pF VGS=0V,VDS=-30V,f=1MHz Reverse transfer capacitance Crss - 15 - pF VGS=0V,VDS=-30V,f=1MHz Turn-on delay time td(on) - 3 - ns VDD=-30V,VGS=-10V,ID=-3.25A, RG,ext=1.6Ω Rise time tr - 6 - ns VDD=-30V,VGS=-10V,ID=-3.25A, RG,ext=1.6Ω Turn-off delay time td(off) - 22 - ns VDD=-30V,VGS=-10V,ID=-3.25A, RG,ext=1.6Ω Fall time tf - 3 - ns VDD=-30V,VGS=-10V,ID=-3.25A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - -1.5 - nC VDD=-30V,ID=-6.5A,VGS=0to-10V Gate charge at threshold Qg(th) - -0.6 - nC VDD=-30V,ID=-6.5A,VGS=0to-10V Gate to drain charge Qgd - -3.9 - nC VDD=-30V,ID=-6.5A,VGS=0to-10V Switching charge Qsw - -4.8 - nC VDD=-30V,ID=-6.5A,VGS=0to-10V Gate charge total Qg - -13.8 - nC VDD=-30V,ID=-6.5A,VGS=0to-10V Gate plateau voltage Vplateau - -3.7 - V VDD=-30V,ID=-6.5A,VGS=0to-10V Output charge Qoss - -4.4 - nC VDD=-30V,VGS=0V 1) See diagram Gate charge waverforms for gate charge parameter definition Final Data Sheet 4 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P005L Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition -6.5 A TC=25°C - -26 A TC=25°C - -0.9 -1.2 V VGS=0V,IF=-6.5A,Tj=25°C trr - 37 - ns VR=-30V,IF=-6.5A,diF/dt=-100A/µs Qrr - -63 - nC VR=-30V,IF=-6.5A,diF/dt=-100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P005L 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 30 7 6 25 5 4 -ID[A] Ptot[W] 20 15 3 10 2 5 0 1 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);|VGS|≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 100 µs 101 10 ms DC 1 ms ZthJC[K/W] -ID[A] 0.5 100 100 0.2 0.1 0.05 10-1 0.02 0.01 single pulse -2 10 10-1 100 101 102 10-1 10-5 10-4 -VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P005L Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 17.5 400 -10 V 15.0 -4 V -5 V -4.5 V -3.5 V -3 V -4.5 V -2.8 V 12.5 300 -5 V -4 V -ID[A] RDS(on)[mΩ] 10.0 7.5 -10 V 200 -3.5 V 5.0 2.5 -3 V -2.8 V 0.0 0 1 2 3 4 100 5 0 2 4 6 -VDS[V] 8 10 12 14 -ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 10.0 600 25 °C 175 °C 500 7.5 175 °C RDS(on)[mΩ] -ID[A] 400 5.0 300 200 25 °C 2.5 100 0.0 1 2 3 4 -VGS[V] 4 5 6 7 8 9 10 -VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=-6.5A;parameter:Tj 7 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P005L Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.4 2.00 1.75 1.6 1.50 -VGS(th)[V] RDS(on)(normalizedto25°C) 2.0 1.2 1.25 -2700 µA 0.8 1.00 0.4 -270 µA 0.0 -80 -40 0 40 80 120 160 0.75 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=-6.5A,VGS=-10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 3 102 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss -IF[A] C[pF] 101 102 Coss 100 Crss 101 0 10 20 30 40 50 60 10-1 0.00 0.25 -VDS[V] 0.75 1.00 1.25 1.50 -VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P005L Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 1 10 10 -12 V -30 V -48 V 8 25 °C 100 °C 100 -VGS[V] -IAV[A] 6 4 150 °C 10-1 100 101 102 103 tAV[µs] 2 0 0 2 4 6 8 10 12 14 -Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=-6.5Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 71 69 67 -VBR(DSS)[V] 65 63 61 59 57 55 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=-250µA Final Data Sheet 9 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P005L 5PackageOutlines DIM A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 MILLIMETERS MIN 2.16 0.00 0.64 0.65 4,95 0.46 0.40 5.97 5.02 6.35 4.32 MAX 2.41 0.15 0.89 1.15 5.50 0.61 0.98 6.22 5.84 6.73 5.21 2.29 (BSC) 4.57 (BSC) MIN 0.085 0.000 0.025 0.026 0.195 0.018 0.016 0.235 0.198 0.250 0.185 3 9.40 1.18 0.89 0.51 10.48 1.78 1.27 1.02 DOCUMENT NO. Z8B00003328 INCHES 0.370 0.046 0.035 0.020 MAX 0.095 0.006 0.035 0.045 0.217 0.024 0.039 0.245 0.230 0.265 0.205 0.090 (BSC) 0.180 (BSC) 3 0.413 0.070 0.050 0.040 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 05-02-2016 REVISION 06 Figure1OutlinePG-TO252-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P005L RevisionHistory IPD06P005L Revision:2018-05-09,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-05-09 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2018-05-09