IPD110N12N3GBUMA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.2.4 Final Industrial&Multimarket IPD110N12N3 G IPS110N12N3 G OptiMOSTM3Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) VDS 120 V RDS(on),max 11 mΩ ID 75 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen free according to IEC61249-2-21 * • Ideal for high-frequency switching and synchronous rectification Type IPS110N12N3 G IPD110N12N3 G Package PG-TO251-3 PG-TO252-3 Marking 110N12N 110N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 75 T C=100 °C 54 Unit A Pulsed drain current2) I D,pulse T C=25 °C 300 Avalanche energy, single pulse E AS I D=75 A, R GS=25 Ω 120 mJ Gate source voltage3) V GS ±20 V 136 W -55 ... 175 °C P tot Operating and storage temperature T C=25 °C T j, T stg IEC climatic category; DIN IEC 68-1 1) 55/175/56 J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max, I D=75 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.4 page 2 2015-06-24 IPD110N12N3 G IPS110N12N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 3240 4310 - 408 543 Dynamic characteristics6) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 22 - Turn-on delay time t d(on) - 16 - Rise time tr - 16 - Turn-off delay time t d(off) - 24 - Fall time tf - 8 - Gate to source charge Q gs - 18 - Gate to drain charge Q gd - 12 - - 20 - V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=75 A, R G,ext=1.6 Ω pF ns Gate Charge Characteristics5) V DD=60 V, I D=75 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total6) Qg - 49 65 Gate plateau voltage V plateau - 5.6 - Output charge6) Q oss - 56 75 nC - - 75 A - - 300 - 1 1.2 - 90 ns - 249 nC V DD=60 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD t rr Reverse recovery charge Q rr 5) See figure 16 for gate charge parameter definition 6) Defined by design. Not subject to production test Rev. 2.4 T C=25 °C V GS=0 V, I F=75 A, T j=25 °C V R=60 V, I F=I S, di F/dt =100 A/µs page 3 V 2015-06-24 IPD110N12N3 G IPS110N12N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 140 80 70 120 60 100 ID [A] Ptot [W] 50 80 40 60 30 40 20 20 10 0 0 0 50 100 150 200 0 50 TC [°C] 100 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 1 µs 10 µs 102 100 µs 100 DC 101 0.5 ZthJC [K/W] ID [A] 1 ms 10 ms 0.2 0.1 10-1 0.05 0.02 100 0.01 single pulse 10-1 10-2 10-1 100 101 102 103 VDS [V] Rev. 2.4 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2015-06-24 IPD110N12N3 G IPS110N12N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 250 30 10 V 8V 4.5 V 7V 5V 25 200 20 RDS(on) [mΩ] 5.5 V 150 ID [A] 6.5 V 100 6V 15 6V 10 10 V 5.5 V 50 5 5V 4.5 V 0 0 0 1 2 3 4 5 0 20 VDS [V] 40 60 80 60 80 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 100 80 150 gfs [S] ID [A] 60 100 40 175 °C 50 25 °C 20 0 0 0 2 4 6 8 VGS [V] Rev. 2.4 0 20 40 ID [A] page 5 2015-06-24 IPD110N12N3 G IPS110N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=75 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 25 4 3.5 20 830 µA 3 VGS(th) [V] RDS(on) [mΩ] 83 µA 2.5 15 98 % typ 10 2 1.5 1 5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 25 °C 175 °C 103 175 °C, 98% 102 IF [A] C [pF] Coss 102 25 °C, 98% 101 Crss 101 100 0 20 40 60 80 100 VDS [V] Rev. 2.4 0 0.5 1 1.5 2 VSD [V] page 6 2015-06-24 IPD110N12N3 G IPS110N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=67 A pulsed parameter: T j(start) parameter: V DD 103 10 96 V 8 60 V 102 24 V VGS [V] IAS [A] 6 25 °C 4 100 °C 150 °C 101 2 100 0 100 101 102 0 103 10 tAV [µs] 20 30 40 50 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 135 V GS Qg 130 VBR(DSS) [V] 125 120 V g s(th) 115 110 Q g (th) Q sw Q gs 105 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.4 page 7 2015-06-24 IPD110N12N3 G IPS110N12N3 G PG-TO-251SL : Outline Rev. 2.4 page 8 2015-06-24 IPD110N12N3 G IPS110N12N3 G PG-TO252-3: Outline Rev. 2.4 page 9 2015-06-24 OptiMOS™3Power-Transistor IPD_S110N12N3G RevisionHistory IPD_S110N12N3 G Revision:2015-07-16,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.4 2015-07-16 Update VGS(th) and package outline TO252-3 WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 11 Rev.2.4,2015-07-16