IPD30N06S4L-23

厂商：
EUPEC(英飞凌)
封装：
TO-252(DPAK)
描述：
特性：N沟道。增强模式。 AEC Q101认证。 MSL1可达260℃峰值回流温度。 175℃工作温度。绿色产品（符合RoHS标准）。 100%雪崩测试

数据手册：

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详情介绍
数据手册
价格&库存

IPD30N06S4L-23 数据手册

IPD30N06S4L-23 OptiMOS®-T2 Power-Transistor Product Summary V DS 60 V R DS(on),max 23 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD30N06S4L-23 PG-TO252-3-11 4N06L23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V 30 T C=100°C, V GS=10V1) 21 Unit A Pulsed drain current1) I D,pulse T C=25°C 120 Avalanche energy, single pulse1) E AS I D=15A 18 mJ Avalanche current, single pulse I AS - 30 A Gate source voltage V GS - ±16 V Power dissipation P tot T C=25°C 36 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 − Rev. 1.0 page 1 2009-03-23 IPD30N06S4L-23 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 4.2 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=10µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=60V, V GS=0V, T j=25°C - 0.01 1 - 5 100 V DS=60V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=16V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=15A - 27 40 mΩ V GS=10V, I D=30A - 18 23 Rev. 1.0 page 2 2009-03-23 IPD30N06S4L-23 Parameter Symbol Values Conditions Unit min. typ. max. - 1200 1560 - 325 420 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 18 36 Turn-on delay time t d(on) - 4 - Rise time tr - 1 - Turn-off delay time t d(off) - 15 - Fall time tf - 3 - Gate to source charge Q gs - 4.9 6.4 Gate to drain charge Q gd - 2.1 4.2 Gate charge total Qg - 16.1 21 Gate plateau voltage V plateau - 4.1 - V - - 30 A - - 120 0.6 0.95 1.3 V - 10 - ns - 10 - nC V GS=0V, V DS=25V, f =1MHz V DD=30V, V GS=10V, I D=30A, R G=3.5Ω pF ns Gate Charge Characteristics1) V DD=48V, I D=30A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=30A, T j=25°C Reverse recovery time1) t rr V R=30V, I F=I S, di F/dt =100A/µs Reverse recovery charge1) Q rr 1) T C=25°C Specified by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-23 IPD30N06S4L-23 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 40 40 30 30 I D [A] P tot [W] 1 Power dissipation 20 10 20 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 0.5 100 100 0.1 0.05 Z thJC [K/W] I D [A] 1 µs 10 µs 100 µs 0.01 10-1 single pulse 10 10-2 1 ms 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2009-03-23 IPD30N06S4L-23 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 120 40 6V 10 V 4V 4.5 V 5V 100 6V 35 R DS(on) [mΩ] I D [A] 80 5V 60 4.5 V 40 4V 30 25 20 20 10 V 0 15 0 1 2 3 4 5 6 0 20 40 V DS [V] 60 80 100 120 140 180 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 30 A; V GS = 10 V parameter: T j 120 36 -55 °C 100 32 25 °C 28 R DS(on) [mΩ] I D [A] 80 60 175 °C 40 20 20 16 0 0 1 2 3 4 5 6 V GS [V] Rev. 1.0 24 12 -60 -20 20 60 100 T j [°C] page 5 2009-03-23 IPD30N06S4L-23 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 2.5 2 1.5 C [pF] V GS(th) [V] 100 µA 10 µA Ciss 103 Coss 1 102 0.5 Crss 101 0 -60 -20 20 60 100 140 0 180 5 10 15 T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 103 100 102 10 25 30 25 °C 100 °C I AV [A] I F [A] 101 150 °C 1 175 °C 25 °C 0.6 0.8 100 0.1 0 0.2 0.4 1 1.2 1.4 V SD [V] Rev. 1.0 20 V DS [V] 0.1 1 10 100 1000 t AV [µs] page 6 2009-03-23 IPD30N06S4L-23 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); I D = 15 A V BR(DSS) = f(T j); I D = 1 mA 66 20 64 V BR(DSS) [V] E AS [mJ] 15 10 62 60 5 58 56 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 30 A pulsed parameter: V DD 10 V GS 9 Qg 8 12 V 48 V 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 3 6 9 12 15 Q gate Q gd 18 Q gate [nC] Rev. 1.0 page 7 2009-03-23 IPD30N06S4L-23 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2009 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2009-03-23 IPD30N06S4L-23 Revision History Version Date Changes Revision 1.0 Rev. 1.0 23.03.2009 Final data sheet page 9 2009-03-23

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IPD30N06S4L-23

物料型号为 IPD30N06S4L-23，是一款N-Channel增强型OptiMOS®-T2功率晶体管，符合RoHS标准。

其主要特性包括：

- 30A的连续漏极电流 - 60V的漏源击穿电压 - 23mΩ的最大导通电阻 - 175°C的工作温度 - 符合AEC Q101标准 - 通过100%的雪崩测试

封装信息为PG-TO252-3-11，标记为4N06L23。

引脚分配为：引脚2/Tab为漏极，引脚1为栅极，引脚3为源极。

电气特性包括最大连续漏极电流、脉冲漏极电流、雪崩能量、雪崩电流、栅源电压、总功耗、工作和存储温度等。

热特性包括结到外壳的热阻和最小尺寸的SMD版本。

动态特性包括输入电容、输出电容、反向传输电容、开通延迟时间、上升时间、关断延迟时间和下降时间。

栅极电荷特性、反向二极管特性和安全工作区也被详细描述。

请注意，文档还包括了典型的输出特性、漏源导通电阻和转移特性等图表，以及雪崩能量、漏源击穿电压和栅极电荷波形的典型图。