IPD30N12S3L31ATMA1

IPD30N12S3L-31 OptiMOS™-T Power-Transistor Product Summary VDS 120 V RDS(on),max 31 mW ID 30 A Features • OptiMOS™ - power MOSFET for automotive applications PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested Type Package Marking IPD30N12S3L-31 PG-TO252-3-11 3N12L31 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V 30 T C=100°C, V GS=10V1) 20 Unit A Pulsed drain current1) I D,pulse T C=25°C 120 Avalanche energy, single pulse1) E AS I D=15A 138 mJ Avalanche current, single pulse I AS - 30 A Gate source voltage3) V GS - ±20 V Power dissipation P tot T C=25°C 57 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.1 page 1 2023-06-15 IPD30N12S3L-31 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 2.6 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (Br)DSS V GS=0V, I D= 1mA 120 - - Gate threshold voltage V GS(th) V DS=V GS, I D=29µA 1.2 1.7 2.4 Zero gate voltage drain current I DSS V DS=120V, V GS=0V, T j=25°C - 0.01 0.1 - 1 10 V DS=120V, V GS=0V, T j=125°C1) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=30A - 32 42 mW V GS=10 V, I D=30 A - 26 31 Rev. 1.1 page 2 2023-06-15 IPD30N12S3L-31 Parameter Symbol Values Conditions Unit min. typ. max. - 1520 1976 - 380 494 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 45 68 Turn-on delay time t d(on) - 6 - Rise time tr - 4 - Turn-off delay time t d(off) - 18 - Fall time tf - 3 - Gate to source charge Q gs - 5 7 Gate to drain charge Q gd - 4 6 Gate charge total Qg - 24 31 Gate plateau voltage V plateau - 3.7 - V - - 30 A - - 120 0.6 1 1.2 V - 72 - ns - 150 - nC V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=30A, R G=3.5W pF ns Gate Charge Characteristics1) V DD=96V, I D=30A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=30A, T j=25°C Reverse recovery time1) t rr V R=60V, I F=I S, di F/dt =100A/µs Reverse recovery charge1) Q rr 1) T C=25°C Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) -5V to -20V for max. 168 non-consecutive hours Rev. 1.1 page 3 2023-06-15 IPD30N12S3L-31 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 60 30 50 20 ID [A] Ptot [W] 40 30 20 10 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 0.5 100 1 µs 100 0.1 ZthJC [K/W] ID [A] 10 µs 100 µs 0.05 10-1 0.01 10 single pulse 10-2 1 ms 1 10-3 0.1 1 10 100 1000 VDS [V] Rev. 1.1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2023-06-15 IPD30N12S3L-31 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 120 80 10 V 5V 3V 70 3.5 V 80 60 4.5 V ID [A] RDS(on) [mΩ] 4V 4V 40 50 40 4.5 V 3.5 V 5V 30 10 V 3V 0 0 2 4 20 6 0 20 VDS [V] 40 60 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 30 A; V GS = 10 V parameter: T j α = 0.4 60 60 25 °C -55 °C 175 °C 50 ID [A] RDS(on) [mW] 40 40 30 20 20 0 1 2 3 4 5 VGS [V] Rev. 1.1 10 -60 -20 20 60 100 140 180 Tj [°C] page 5 2023-06-15 IPD30N12S3L-31 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 2.5 2 150 µA C [pF] Ciss 30 µA VGS(th) [V] 1.5 103 1 Coss 102 0.5 Crss 101 0 -60 -20 20 60 100 140 0 180 20 40 60 80 100 120 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Typ. avalanche characteristics IF = f(VSD) I AS= f(t AV) parameter: T j parameter: Tj(start) 100 103 100 °C 10 IF [A] IAV [A] 102 25 °C 150 °C 175 °C 25 °C 101 1 175 °C 25 °C 0.6 0.8 100 0 0.2 0.4 1 1.2 1.4 VSD [V] Rev. 1.1 0.1 0.1 1 10 100 1000 tAV [µs] page 6 2023-06-15 IPD30N12S3L-31 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V (Br)DSS = f(T j); I D = 1 mA parameter: I D 135 300 7.5 A 250 130 150 V(Br)DSS [V] EAS [mJ] 200 15 A 125 120 100 30 A 115 50 110 0 25 75 125 -55 175 -15 Tj [°C] 25 65 105 145 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 30 A pulsed parameter: V DD 10 V GS 9 Qg 8 24 V 96 V 7 VGS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 5 10 15 20 Q gate Q gd 25 Qgate [nC] Rev. 1.1 page 7 2023-06-15 IPD30N12S3L-31 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-06-15 IMPORTANT NOTICE Published by The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). Infineon Technologies AG 81726 Munich, Germany © 2023 Infineon Technologies AG All Rights Reserved. Do you have any questions about any aspect of this document? Email: erratum@infineon.com Document reference IPD30N12S3L-31-Data-Sheet11-Infineon Rev. 1.1 With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. page 8 For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact the nearest Infineon Technologies Office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 2023-06-15 IPD30N12S3L-31 Revision History Version Revision 1.0 Date 2016-06-20 Changes Final Data Sheet Revision 1.1 2023-06-15 Revision 1.1 2023-06-15 Diagram 8 Typ. drain-source onstate resistance: used α value clarified Ratings of V GS refined in footnote 3) Revision 1.1 Rev. 1.1 2023-06-15 Corrected diagram 10 typical capacitances page 9 2023-06-15