IPD50N03S2L06ATMA1

IPD50N03S2L-06 OptiMOS® Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS(on),max 6.4 mΩ ID 50 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD50N03S2L-06 PG-TO252-3-11 PN03L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 50 Unit A 50 Pulsed drain current2) I D,pulse T C=25 °C 200 Avalanche energy, single pulse E AS I D=50A 250 mJ Gate source voltage V GS ±20 V Power dissipation P tot 136 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2006-07-18 IPD50N03S2L-06 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 1.1 Thermal resistance, junction ambient, leaded R thJA - - 100 SMD version, device on PCB R thJA minimal footprint - - 75 6 cm2 cooling area3) - - 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 30 - 8 Gate threshold voltage V GS(th) V DS=V GS, I D=85 µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.01 27 - 1 100 V DS=30 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A - 7.6 9.2 mΩ Drain-source on-state resistance RDS(on) V GS=10 V, I D=50 A - 5.1 6.4 mΩ Rev. 1.0 page 2 2006-07-18 IPD50N03S2L-06 Parameter Symbol Values Conditions Unit min. typ. max. - 1900 - - 760 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 180 - Turn-on delay time t d(on) - 10 - Rise time tr - 30 - Turn-off delay time t d(off) - 40 - Fall time tf - 15 - Gate to source charge Q gs - 6 8 Gate to drain charge Q gd - 16 27 Gate charge total Qg - 50 68 Gate plateau voltage V plateau - 3.3 - V - - 50 A - - 200 V GS=0 V, V DS=25 V, f =1 MHz V DD=15 V, V GS=10 V, I D=50 A, R G=3.6 Ω pF ns Gate Charge Characteristics2) V DD=24 V, I D=50 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - 0.9 1.3 V Reverse recovery time2) t rr V R=15 V, I F=I S, di F/dt =100 A/µs - 40 - ns Reverse recovery charge2) Q rr V R=15 V, I F=I S, di F/dt =100 A/µs - 50 - nC T C=25 °C 1) Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry 113A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-07-18 IPD50N03S2L-06 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 10 V 160 60 140 50 120 40 I D [A] P tot [W] 100 80 30 60 20 40 10 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 10 µs 100 100 µs 100 0.5 I D [A] Z thJC [K/W] 1 ms 0.1 -1 10 0.05 10 0.01 10-2 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-7 page 4 2006-07-18 IPD50N03S2L-06 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 200 20 10 V 5V 3V 3.5 V 18 4V 4.5 V 16 150 RDS(on) [mW] I D [A] 14 4V 100 12 10 4.5 V 8 3.5 V 5V 50 6 10 V 3V 4 2.5 V 0 2 0 2 4 6 8 10 0 20 40 60 80 100 120 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. Forward transconductance I D = f(V GS); V DS = 6V g fs = f(I D); T j = 25°C parameter: T j parameter: g fs 200 150 125 160 100 I D [A] g fs [S] 120 75 80 50 40 25 25 °C 175 °C -55 °C 0 0 0 1 2 3 4 0 V GS [V] Rev. 1.0 50 100 150 200 I D [A] page 5 2006-07-18 IPD50N03S2L-06 9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(ON) = f(T j) V GS(th) = f(T j); V GS = V DS parameter: I D = 50 A; VGS = 10 V parameter: I D 2.5 10 2 8 V GS(th) [V] R DS(on) [mΩ] 415 µA 6 1.5 83 µA 1 4 0.5 2 0 -60 -20 20 60 100 140 -60 180 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(VSD) parameter: T j 104 103 103 102 I F [A] C [pF] Ciss Coss 101 175 °C 25 °C Crss 102 100 0 5 10 15 20 25 30 V DS [V] Rev. 1.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] page 6 2006-07-18 IPD50N03S2L-06 13 Typical avalanche energy 14 Typ. gate charge E AS = f(T j) V GS = f(Q gate); I D = 50 A pulsed parameter: I D 12 1000 12.5 A 10 6V 800 24 V V GS [V] E AS [mJ] 8 600 25 A 400 6 4 50 A 200 2 0 0 25 75 125 0 175 20 T j [°C] 40 60 Q gate [nC] 15 Typ. drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) = f(T j); I D = 1 mA 36 V GS 35 Qg 34 V BR(DSS) [V] 33 32 31 30 29 Q gate 28 Q gs Q gd 27 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 7 2006-07-18 IPD50N03S2L-06 Published by Infineon Technologies AG Am Campeon 1-12 D-85579 Neubiberg © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-07-18