IPD50N12S3L-15
OptiMOS®-T Power-Transistor
Product Summary
VDS
120
V
RDS(on),max
15
mW
ID
50
A
Features
• OptiMOS™ - power MOSFET for automotive applications
PG-TO252-3-11
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD50N12S3L-15
PG-TO252-3-11
QN12L15
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
Value
T C=25°C, V GS=10V
50
T C=100°C, V GS=10V1)
38
Unit
A
Pulsed drain current1)
I D,pulse
T C=25°C
200
Avalanche energy, single pulse1)
E AS
I D=25A
330
mJ
Avalanche current, single pulse
I AS
-
50
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25 °C
100
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Rev. 1.0
page 1
2016-06-20
IPD50N12S3L-15
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
Thermal resistance, junction - case
R thJC
-
-
-
1.5
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
120
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=60µA
1.2
1.7
2.4
Zero gate voltage drain current
I DSS
V DS=120V, V GS=0V,
T j=25°C
-
0.01
0.1
T j=125°C1)
-
1
10
100
V DS=120V, V GS=0V,
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
Drain-source on-state resistance
R DS(on)
V GS=4.5V, I D=50A
-
15
20
V GS=10 V, I D=50 A
-
13
15
Rev. 1.0
page 2
V
µA
nA
mW
2016-06-20
IPD50N12S3L-15
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
3215
4180
-
730
950
Dynamic characteristics1)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
63
95
Turn-on delay time
t d(on)
-
10
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
29
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
11
14
Gate to drain charge
Q gd
-
8
12
Gate charge total
Qg
-
44
57
Gate plateau voltage
V plateau
-
3.7
-
V
-
-
50
A
-
-
200
0.6
1
1.2
V
-
97
-
ns
-
178
-
nC
V GS=0V, V DS=25V,
f =1MHz
V DD=20V, V GS=10V,
I D=50A, R G=3.5W
pF
ns
Gate Charge Characteristics1)
V DD=96V, I D=50A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current1)
IS
Diode pulse current1)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=50A,
T j=25°C
Reverse recovery time1)
t rr
V R=60V, I F=I S,
di F/dt =100A/µs
Reverse recovery charge1)
Q rr
1)
T C=25°C
Defined by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2016-06-20
IPD50N12S3L-15
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V
120
60
100
50
80
40
ID [A]
Ptot [W]
1 Power dissipation
60
30
40
20
20
10
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
0.5
100
ZthJC [K/W]
10 µs
100
ID [A]
100 µs
0.1
10-1
0.05
0.01
1 ms
10
10-2
single pulse
1
10-3
0.1
1
10
100
1000
VDS [V]
Rev. 1.0
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2016-06-20
IPD50N12S3L-15
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
200
50
10 V
5V
3V
160
3.5 V
40
4.5 V
4V
4.5 V
ID [A]
RDS(on) [mΩ]
120
4V
80
30
20
3.5 V
40
5V
10 V
3V
0
0
2
4
10
6
0
40
80
VDS [V]
120
160
ID [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
parameter: T j
160
30
-55 °C
25 °C
25
120
RDS(on) [mW]
ID [A]
175 °C
80
20
15
40
10
0
1
2
3
4
5
VGS [V]
Rev. 1.0
5
-60
-20
20
60
100
140
180
Tj [°C]
page 5
2016-06-20
IPD50N12S3L-15
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
2.5
Ciss
2
60 µA
1.5
VGS(th) [V]
C [pF]
300 µA
103
Coss
1
102
Crss
0.5
101
0
-60
-20
20
60
100
140
0
180
5
10
15
20
25
30
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
100
103
25 °C
100 °C
102
150 °C
IF [A]
IAV [A]
10
175 °C
101
175 °C
25 °C
1
25 °C
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD [V]
Rev. 1.0
0.1
0.1
1
10
100
1000
tAV [µs]
page 6
2016-06-20
IPD50N12S3L-15
13 Typical avalanche energy
14 Typ. drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
135
600
12.5 A
500
130
300
VBR(DSS) [V]
EAS [mJ]
400
25 A
125
120
200
50 A
115
100
110
0
25
75
125
-55
175
-15
Tj [°C]
25
65
105
145
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 50 A pulsed
parameter: V DD
10
V GS
9
Qg
8
24 V
96 V
7
VGS [V]
6
5
V gs(th)
4
3
2
Q g(th)
Q sw
Q gate
1
Q gs
0
0
10
20
30
40
Q gd
50
Qgate [nC]
Rev. 1.0
page 7
2016-06-20
IPD50N12S3L-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2016
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0
page 8
2016-06-20
IPD50N12S3L-15
Revision History
Version
Date
Changes
Revision 1.0
Rev. 1.0
20.06.2016 Final Data Sheet
page 9
2016-06-20
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