IPD50R399CPATMA1

IPD50R399CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS(on),max 0.399 W 17 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant, Halogen free 1) • Fully qualified according to JEDEC for Industrial Applications PG-TO252 CoolMOS CP is designed for: • Hard and softswitching SMPS topologies • DCM PFC for Lamp Ballast • PWM for Lamp Ballast & PDP and LCD TV Type Package Marking IPD50R399CP PG-TO252 5R399P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 9 T C=100 °C 6 Pulsed drain current2) I D,pulse T C=25 °C 20 Avalanche energy, single pulse E AS I D=3.3 A, V DD=50 V 215 Avalanche energy, repetitive t AR2),3) E AR I D=3.3 A, V DD=50 V 0.33 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Rev. 2.3 Unit A mJ 3.3 A V DS=0...400 V 50 V/ns static ±20 V AC (f>1 Hz) ±30 T C=25 °C 83 W -55 ... 150 °C page 1 2020-05-10 IPD50R399CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Value Unit 4.9 A T C=25 °C Diode pulse current2) I S,pulse 20 Reverse diode dv /dt 4) dv /dt 15 V/ns Parameter Symbol Conditions Values Unit min. typ. max. - - 1.5 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, reflowsoldering T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 500 - - Gate threshold voltage V GS(th) V DS=V GS, I D=0.33 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=500 V, V GS=0 V, T j=25 °C - - 1 V DS=500 V, V GS=0 V, T j=150 °C - 10 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=4.9 A, T j=25 °C - 0.36 0.399 W V GS=10 V, I D=4.9 A, T j=150 °C - 0.90 - f =1 MHz, open drain - 2.2 - Gate resistance Rev. 2.3 RG page 2 W 2020-05-10 IPD50R399CP Parameter Values Symbol Conditions Unit min. typ. max. - 890 - - 40 - - 38 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related6) V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 400 V Effective output capacitance, time related7) C o(tr) - 81 - Turn-on delay time t d(on) - 35 - Rise time tr - 14 - Turn-off delay time t d(off) - 80 - Fall time tf - 14 - Gate to source charge Q gs - 4 - Gate to drain charge Q gd - 6 - Gate charge total Qg - 17 23 Gate plateau voltage V plateau - 5.2 - V - 0.9 1.2 V - 260 - ns - 1.9 - µC - 12.2 - A V DD=400 V, V GS=10 V, I D=4.9 A, R G,ext=35.1 W ns Gate Charge Characteristics V DD=400 V, I D=4.9 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=4.9 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) I SD≤I D, di /dt ≤400A/µs, V DClink=400V, V peak