MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
500VCoolMOS™CEPowerTransistor
IPD50R500CE
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
500VCoolMOS™CEPowerTransistor
IPD50R500CE
1Description
DPAK
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
tab
1
2
3
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Drain
Pin 2
Gate
Pin 1
Applications
Source
Pin 3
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.5
Ω
Qg.typ
18.7
nC
ID,pulse
24
A
Eoss@400V
2.02
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
Package
IPD50R500CE
PG-TO 252
Final Data Sheet
Marking
50S500CE
2
RelatedLinks
see Appendix A
Rev.2.2,2015-11-17
500VCoolMOS™CEPowerTransistor
IPD50R500CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.2.2,2015-11-17
500VCoolMOS™CEPowerTransistor
IPD50R500CE
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
7.6
4.8
A
TC = 25°C
TC = 100°C
-
24
A
TC=25°C
-
-
129
mJ
ID =2.9A; VDD = 50V
EAR
-
-
0.20
mJ
ID =2.9A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
2.9
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...400V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation (non FullPAK)
TO-252
Ptot
-
-
57
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
Continuous diode forward current
IS
-
-
6.6
A
TC=25°C
Diode pulse current2)
IS,pulse
-
-
24.0
A
TC = 25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD
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