IPD5N25S3-430

IPD5N25S3-430 OptiMOS™-T Power-Transistor Product Summary V DS 250 V R DS(on),max 430 mW ID 5 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD5N25S3-430 PG-TO252-3- 3N25430 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V 5 T C=100°C, V GS=10V1) 4 Unit A Pulsed drain current1) I D,pulse T C=25°C 20 Avalanche energy, single pulse1) Avalanche current, single pulse E AS I D=1.3A 13 mJ I AS - 1.3 A Reverse diode dv /dt Gate source voltage dv /dt V GS - ±20 V Power dissipation P tot T C=25°C 41 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 6 page 1 kV/µs 2012-10-18 IPD5N25S3-430 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 3.7 SMD version, device on PCB R thJA minimal footprint - - 40 6 cm2 cooling area2) - - 62 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 250 - - Gate threshold voltage V GS(th) V DS=V GS, I D=13µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=250V, V GS=0V, T j=25°C - 0.1 1 T j=125°C2) - 10 100 V DS=250V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=5A - 370 430 mW Rev. 1.0 page 2 2012-10-18 IPD5N25S3-430 Parameter Symbol Values Conditions Unit min. typ. max. - 317 422 - 117 156 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 6 13 Turn-on delay time t d(on) - 3 - Rise time tr - 2 - Turn-off delay time t d(off) - 8 - Fall time tf - 5 - Gate to source charge Q gs - 1.5 2 Gate to drain charge Q gd - 1.3 2.7 Gate charge total Qg - 4.7 6.2 Gate plateau voltage V plateau - 4.7 - V - - 5 A - - 20 V GS=0V, V DS=25V, f =1MHz V DD=125V, V GS=10V, I D=5A, R G=3.5W pF ns Gate Charge Characteristics1), 3) V DD=200V, I D=5A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=5A, T j=25°C - 0.9 1.2 V Reverse recovery time1) t rr V R=125V, I F=5A, di F/dt =100A/µs - 70 - ns Reverse recovery charge1) Q rr - 159 - nC 1) T C=25°C Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Devices thermal performance determined according to EIA JESD 51-14 "Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance" Rev. 1.0 page 3 2012-10-18 IPD5N25S3-430 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 50 6 40 I D [A] P tot [W] 30 3 20 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 101 100 0.5 Z thJC [K/W] 100 I D [A] 1 µs 10 10 µs 100 µs 0.1 0.05 10-1 single pulse 1 ms 10-2 1 1 10 100 1000 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 0.01 page 4 2012-10-18 IPD5N25S3-430 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 20 10 V 6.5 V 6V 440 18 16 420 14 5.5 V 400 R DS(on) [mW] I D [A] 12 10 8 5V 5V 5.5 V 380 6V 6.5 V 360 10 V 6 340 4 320 2 0 300 0 5 10 15 20 25 30 0 1 2 V DS [V] 3 4 5 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 5 A; V GS = 10 V parameter: T j 20 1200 18 1000 16 14 R DS(on) [mW] 800 I D [A] 12 10 8 600 400 6 175 °C 4 200 2 25 °C -55 °C 0 3 3.5 4 4.5 5 5.5 6 V GS [V] Rev. 1.0 0 -60 -20 20 60 100 140 180 T j [°C] page 5 2012-10-18 IPD5N25S3-430 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 103 4 Ciss 3 C [pF] V GS(th) [V] 3.5 130 µA 102 13 µA Coss 2.5 Crss 2 1.5 101 -60 -20 20 60 100 140 0 180 50 100 150 200 250 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 10 1012 1 I F [A] I AV [A] 1023 150 °C 100 °C 25 °C 01 10 175 °C 10 10-10 0 0.2 0.4 175 °C 0.6 0.1 25 °C 0.8 25 °C 0.01 1 1.2 1.4 V SD [V] Rev. 1.0 0.1 1 10 100 1000 10000 t AV [µs] page 6 2012-10-18 IPD5N25S3-430 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); I D = 45 A V BR(DSS) = f(T j); I D = 1 mA 290 5 280 4 V BR(DSS) [V] E AS [mJ] 270 3 2 260 250 0.325 A 0.65 A 1 240 1.3 A 230 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 5 A pulsed parameter: V DD 10 V GS 9 Qg 8 50 V 7 200 V V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 1 2 3 4 Q gate Q gd 5 Q gate [nC] Rev. 1.0 page 7 2012-10-18 IPD5N25S3-430 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2012 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2012-10-18 IPD5N25S3-430 Revision History Version Date Changes Revision 0.1 21.10.2010 Initial target data sheet Revision 0.2 24.07.2012 Preliminary data sheet Revision 1.0 18.10.2012 Final Data Sheet Rev. 1.0 page 9 2012-10-18