IPD60N10S412ATMA1

IPD60N10S4-12 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on),max 12.2 mW ID 60 A Features • N-channel - Normal Level - Enhancement mode PG-TO252-3-313 • AEC qualified TAB • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 • Green Product (RoHS compliant) 3 • 100% Avalanche tested Drain pin 2/Tab Type Package Marking IPD60N10S4-12 PG-TO252-3-313 4N1012 Gate pin 1 Source pin 3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V 60 T C=100°C, V GS=10V1) 43 Unit A Pulsed drain current1) I D,pulse T C=25°C 240 Avalanche energy, single pulse1) E AS I D=30A 120 mJ Avalanche current, single pulse I AS - 40 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 94 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2014-06-30 IPD60N10S4-12 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 1.6 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=1mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=46µA 2.0 2.7 3.5 Zero gate voltage drain current I DSS V DS=100V, V GS=0V - 0.01 1 T j=125°C2) - 1 100 V DS=100V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=60A - 10.4 12.2 mW Rev. 1.0 page 2 2014-06-30 IPD60N10S4-12 Parameter Symbol Values Conditions Unit min. typ. max. - 1900 2470 - 600 900 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 40 80 Turn-on delay time t d(on) - 6 - Rise time tr - 3 - Turn-off delay time t d(off) - 9 - Fall time tf - 13 - Gate to source charge Q gs - 10 13 Gate to drain charge Q gd - 5 10 Gate charge total Qg - 26 34 Gate plateau voltage V plateau - 5.1 - V - - 60 A - - 240 V GS=0V, V DS=25V, f =1MHz V DD=50V, V GS=10V, I D=60A, R G=3.5W pF ns Gate Charge Characteristics1) V DD=80V, I D=60A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0V, I F=60A, T j=25°C - 1.0 1.3 V Reverse recovery time1) t rr V R=50V, I F=50A, di F/dt =100A/µs - 60 - ns Reverse recovery charge1) Q rr - 110 - nC 1) T C=25°C Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2014-06-30 IPD60N10S4-12 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 100 80 90 80 60 70 ID [A] Ptot [W] 60 50 40 40 30 20 20 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 100 100 0.5 ZthJC [K/W] ID [A] 10 µs 100 µs 10 0.1 10-1 0.05 0.01 1 ms single pulse 1 10-2 0.1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-06-30 IPD60N10S4-12 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 240 50 10 V 5.5 V 5V 7V 6V 45 40 180 120 RDS(on) [mW] ID [A] 35 6V 5.5 V 30 25 20 7V 60 15 5V 10 V 10 0 0 1 2 3 4 5 5 0 60 120 VDS [V] 180 240 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 60 A; V GS = 10 V parameter: T j 240 25 -55 °C 25 °C 22 175 °C 180 RDS(on) [mW] ID [A] 19 120 16 13 10 60 7 0 3 4 5 6 7 8 VGS [V] Rev. 1.0 4 -60 -20 20 60 100 140 180 Tj [°C] page 5 2014-06-30 IPD60N10S4-12 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 C [pF] Ciss VGS(th) [V] 3 103 Coss 460 µA 2.5 46 µA 102 2 Crss 101 1.5 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics I F = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 103 25 °C 150 °C 102 100 °C IF [A] IAV [A] 10 101 175 175 °C °C 25 °C 0.6 0.8 1 100 0 0.2 0.4 1 1.2 1.4 VSD [V] Rev. 1.0 0.1 0.1 1 10 100 1000 tAV [µs] page 6 2014-06-30 IPD60N10S4-12 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); I D = 30 A V BR(DSS) = f(T j); I D = 1 mA 110 140 108 120 106 100 VBR(DSS) [V] EAS [mJ] 104 80 60 102 100 98 40 96 20 94 92 0 25 75 125 -55 175 -15 Tj [°C] 25 65 105 145 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 60 A pulsed parameter: V DD 10 V GS 20 V Qg 8 80 V VGS [V] 6 V gs(th) 4 2 Q g(th) Q sw Q gs 0 0 10 20 Q gate Q gd 30 Qgate [nC] Rev. 1.0 page 7 2014-06-30 IPD60N10S4-12 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-06-30 IPD60N10S4-12 Revision History Version Date Changes Revision 1.0 Rev. 1.0 30.06.2014 Data Sheet Revision 1.0 page 9 2014-06-30