IPD60R180C7ATMA1

IPD60R180C7 MOSFET 600VCoolMOSªC7PowerDevice DPAK CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. tab 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². 1 2 3 Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package Drain Pin 2, Tab Gate Pin 1 Benefits •IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency •Enablinghighersystemefficiencybylowerswitchinglosses •Increasedpowerdensitysolutionsduetosmallerpackages •Suitableforapplicationssuchasserver,telecomandsolar •Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto lowEossandQg *1: Internal body diode *1 Source Pin 3 Potentialapplications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 180 mΩ Qg.typ 24 nC ID,pulse 45 A ID,continuous @ Tj1 Hz) Power dissipation Ptot - - 68 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - n.a. Ncm - IS - - 13 A TC=25°C Diode pulse current IS,pulse - - 45 A TC=25°C Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD