IPD60R210PFD7SAUMA1

厂商：
EUPEC(英飞凌)
封装：
TO-252(DPAK)
描述：
表面贴装型 N 通道 600 V 16A（Tc） 64W（Tc） PG-TO252-3-344

数据手册：

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数据手册
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IPD60R210PFD7SAUMA1 数据手册

IPD60R210PFD7S MOSFET 600VCoolMOSªPFD7SJPowerDevice DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™PFD7isanoptimizedplatformtailoredtotarget costsensitiveapplicationsinconsumermarketssuchascharger,adapter, motordrive,lighting,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. tab 1 2 3 Features Drain Pin 2, Tab •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations Gate Pin 1 *1: Internal body diode *1 Source Pin 3 Benefits •Enableshighpowerdensitydesignsandsmallformfactors •Enablesefficiencygainsathigherswitchingfrequencies •Excellentcommutationruggedness •Easytoselectrightpartsandoptimizethedesign Potentialapplications RecommendedforZVStopologiesusedinhighdensitychargers, adapters,lightingandmotordrivesapplications,etc. Productvalidation QualifiedaccordingtoJEDECStandard Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 210 mΩ Qg,typ 23 nC ID,pulse 42 A Eoss @ 400V 2.6 µJ Body diode diF/dt 1300 A/µs ESD Class (HBM) 1C - Type/OrderingCode Package IPD60R210PFD7S PG-TO 252-3 Final Data Sheet Marking 60S210D7 1 RelatedLinks see Appendix A Rev.2.0,2019-04-09 600VCoolMOSªPFD7SJPowerDevice IPD60R210PFD7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2019-04-09 600VCoolMOSªPFD7SJPowerDevice IPD60R210PFD7S 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 16 10 A TC=25°C TC=100°C - 42 A TC=25°C - - 49 mJ ID=3.2A; VDD=50V; see table 10 EAR - - 0.24 mJ ID=3.2A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 3.2 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 64 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - - Ncm - IS - - 16 A TC=25°C Diode pulse current IS,pulse - - 42 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD

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IPD60R210PFD7SAUMA1

物料型号：IPD60R210PFD7S 器件简介：600V CoolMOS™ PFD7 SJ Power Device，适合充电器、适配器、电机驱动、照明等消费市场应用。

引脚分配：Drain Pin 2, Gate Pin 1, Source Pin 3，且内部包含体二极管。

参数特性：VDS@Tj,max 650V，RDS(on),max 210 mΩ，Qg,typ 23 nC，ID,pulse 42 A，Eoss@400V 2.6 µJ，Body diode diF/dt 1300 A/µs。

功能详解：极低损耗、快速开关损耗、快速体二极管、广泛的RDS(on)和封装变化。

应用信息：推荐用于高密度充电器、适配器、照明和电机驱动等应用的ZVS拓扑结构。

封装信息：PG-TO 252-3，具体尺寸和封装细节见数据手册的“Package Outlines”部分。

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