IPD60R800CE

IPD60R800CE,IPA60R800CE MOSFET 600VCoolMOSªCEPowerTransistor DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. PG-TO220FP tab 1 2 3 Features Drain Pin 2, Tab Gate Pin 1 •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson thegateorseparatetotempolesisgenerallyrecommended. Note2:*6R800CEisFullPAKmarkingonly Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 800 mΩ Id. 8.4 A Qg.typ 17.2 nC ID,pulse 15.7 A Eoss@400V 1.6 µJ Type/OrderingCode Package IPD60R800CE PG-TO 252 IPA60R800CE PG-TO 220 FullPAK Final Data Sheet Marking 60S800CE / 6R800CE* 1 RelatedLinks see Appendix A Rev.2.3,2016-08-08 600VCoolMOSªCEPowerTransistor IPD60R800CE,IPA60R800CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Final Data Sheet 2 Rev.2.3,2016-08-08 600VCoolMOSªCEPowerTransistor IPD60R800CE,IPA60R800CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 8.4 5.3 A TC=25°C TC=100°C - 15.7 A TC=25°C - - 72 mJ ID=1A; VDD=50V; see table 11 EAR - - 0.17 mJ ID=1A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 1.0 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-252 Ptot - - 74 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 5.9 A TC=25°C Diode pulse current IS,pulse - - 15.7 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD