IPD65R250E6XTMA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6650V 650VCoolMOS™E6PowerTransistor IPD65R250E6 DataSheet Rev.2.2 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPD65R250E6 1Description DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™E6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. tab 1 2 3 Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2 Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server, TelecomandUPS. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 0.25 Ω Qg,typ 45 nC ID,pulse 46 A Eoss @ 400V 3.7 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPD65R250E6 PG-TO 252 65E6250 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.2,2013-07-30 650VCoolMOS™E6PowerTransistor IPD65R250E6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) ID Values Min. Typ. Max. 16.1 Unit Note/TestCondition A TC=25°C TC=100°C 11.3 ID‚pulse 46 A TC=25°C Avalanche energy, single pulse EAS 290 mJ ID=2.4A,VDD=50V Avalanche energy, repetitive EAR 0.44 mJ ID=2.4A,VDD=50V Avalanche current, repetitive IAR 2.4 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V Gate source voltage VGS -20 20 V static -30 30 -55 150 °C Pulsed drain current 2) AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg Continuous diode forward current IS 17.9 A TC=25°C Diode pulse current IS‚pulse 46 A TC=25°C dv/dt 15 V/ns Maximum diode commutation speed dif/dt 500 A/µs VDS=0...400V,ISD≤ID, Tj=25°C Power dissipation (non FullPAK) Ptot 208 W Reverse diode dv/dt 3) Tc = 25ºC 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj max 3) Vpeak7V;