IPD65R420CFDAATMA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor CFDAAutomotive 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA DataSheet Rev.2.1 Final Automotive 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA 1Description DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseries combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Theresultingdevicesprovideallbenefitsofafast switchingSJMOSFETwhileofferinganextremelyfastandrobustbody diode.Thiscombinationofextremelylowswitching,commutationand conductionlossestogetherwithhighestrobustnessmakeespecially resonantswitchingapplicationsmorereliable,moreefficient,lighter,and cooler. tab 1 2 3 Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Easytouse/drive •QualifiedaccordingtoAECQ101 •Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformold compound Drain Pin 2 Gate Pin 1 Source Pin 3 Applications 650VCoolMOS™CFDAisdesignedforswitchingapplications. Table1KeyPerformanceParameters Parameter Value Unit VDS 650 V RDS(on),max 0.42 Ω Qg,typ 90 nC ID,pulse 80 A Eoss @ 400V 2.8 µJ Body diode di/dt 500 A/µs Qrr 0.7 µC trr 140 ns Irrm 8.8 A Type/OrderingCode Package Marking RelatedLinks IPD65R420CFDA PG-TO 252 65F420A - Final Data Sheet 2 Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 3 Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Values Min. Typ. Max. 8.7 Unit Note/TestCondition A TC=25°C TC=100°C 5.5 Pulsed drain current ID‚pulse 27 A TC=25°C Avalanche energy, single pulse EAS 227 mJ ID=1.8A,VDD=50V Avalanche energy, repetitive EAR 0.34 mJ ID=1.8A,VDD=50V Avalanche current, repetitive IAR 1.8 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V Gate source voltage VGS -20 20 V static -30 30 2) Power dissipation (SMD) DPAK Ptot Operating and storage temperature Tj‚Tstg Continuous diode forward current Diode pulse current AC (f > 1 Hz) TC=25°C 83.3 W 150 °C IS 8.7 A TC=25°C IS‚pulse 27 A TC=25°C Reverse diode dv/dt dv/dt 50 V/ns Maximum diode commutation speed dif/dt 900 A/µs VDS=0...400V,ISD≤ID, Tj=25°C 3) -40 1) Limited by Tj max Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 4 Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK Values Parameter Symbol Thermal resistance, junction - case RthJC 1.5 K/W Thermal resistance, junction - ambient1) RthJA 62 K/W Min. Typ. Max. Unit Tsold SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm² cooling area 35 Soldering temperature, wave- & reflowsoldering allowed Note/TestCondition 260 °C reflow MSL 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 5 Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Parameter Symbol Drain-source breakdown voltage V(BR)DSS 650 Gate threshold voltage VGS(th) 3.5 Zero gate voltage drain current IDSS Min. Typ. 4 Unit Note/TestCondition V VGS=0V,ID=1mA 4.5 V VDS=VGS,ID=0.3445mA 5 µA VDS=650V,VGS=0V,Tj=25°C Max. VDS=650V,VGS=0V,Tj=150°C 600 Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) 0.378 100 nA VGS=20V,VDS=0V 0.42 Ω VGS=10V,ID=3.4A,Tj=25°C VGS=10V,ID=3.4A,Tj=150°C 0.983 Gate resistance RG 4 Ω f=1MHz,opendrain Unit Note/TestCondition VGS=0V,VDS=100V,f=1MHz Table5Dynamiccharacteristics Values Parameter Symbol Input capacitance Ciss 870 pF Output capacitance Coss 45 pF Effective output capacitance, energy related1) Co(er) 36 pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) 161 pF ID=constant,VGS=0V, VDS=0...400V Turn-on delay time td(on) 10 ns Rise time tr 7 ns VDD=400V,VGS=13V,ID=5.2A, RG=3.4Ω Turn-off delay time td(off) 38 ns Fall time tf 8 ns Min. Typ. Max. Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Qgs Gate to drain charge Values Unit Note/TestCondition 5.5 nC Qgd 17.5 nC VDD=480V,ID=5.2A, VGS=0to10V Gate charge total Qg 32 nC Gate plateau voltage Vplateau 6.4 V 1) 2) Min. Typ. Max. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V Final Data Sheet 6 Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage VSD Reverse recovery time Values Unit Note/TestCondition 0.9 V VGS=0V,IF=5.2A,Tj=25°C trr 90 ns Reverse recovery charge Qrr 0.3 µC VR=400V,IF=5.2A, diF/dt=100A/µs (see table 8) Peak reverse recovery current Irrm 6.2 A Final Data Sheet Min. 7 Typ. Max. Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA 5Electricalcharacteristicsdiagrams Powerdissipation Max.transientthermalimpedance 101 90 0.5 80 0.2 70 0.1 0.05 100 ZthJC[K/W] Ptot[W] 60 50 40 0.02 0.01 single pulse 10-1 30 20 10 0 0 40 80 120 10-2 160 10-5 10-4 10-3 TC[°C] 10-2 Ptot=f(TC) ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea Safeoperatingarea 2 102 10 1 µs 100 µs 10 µs 1 10 101 1 µs 1 ms 100 µs 10 µs 10 ms DC 1 ms ID[A] ID[A] 10 ms 100 10-1 10-2 10-1 tp[s] DC 100 10-1 100 101 102 103 10-2 100 101 102 VDS[V] VDS[V] ID=f(VDS);TC=25°C;D=0;parameter:tp ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 8 103 Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA Typ.outputcharacteristics Typ.outputcharacteristics 35 20 20 V 20 V 18 10 V 30 25 8V 16 8V 7V 14 7V 6V 20 ID[A] ID[A] 6V 12 5.5 V 5V 15 10 V 5.5 V 10 5V 8 4.5 V 4.5 V 6 10 4 5 2 0 0 5 10 15 0 20 0 5 VDS[V] 10 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Typ.drain-sourceon-stateresistance Typ.drain-sourceon-stateresistance 2.0 1.2 typ 1.8 1.0 1.6 5.5 V 0.8 6.5 V RDS(on)[Ω] RDS(on)[Ω] 1.4 10 V 1.2 5V 6V 7V 1.0 0.6 0.4 0.8 0.2 0.6 0.4 0 6 12 18 24 0.0 -40 0 40 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 80 120 Tj[°C] RDS(on)=f(Tj);ID=18.1A;VGS=10V 9 Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA Typ.transfercharacteristics Typ.forwardcharacteristicsofreversediode 102 30 150 °C 125 °C 25 °C 25 °C 25 101 IF[A] ID[A] 20 15 100 10 5 0 0 2 4 6 8 10-1 10 0.0 0.5 VGS[V] 1.0 1.5 2.0 VSD[V] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj IF=f(VSD);parameter:Tj Typ.gatecharge Drain-sourcebreakdownvoltage 10 760 120 V 9 740 480 V 720 8 700 7 680 VBR(DSS)[V] VGS[V] 6 5 4 3 640 620 600 2 580 1 0 660 560 0 10 20 30 40 540 -40 0 Qgate[nC] 80 120 Tj[°C] VGS=f(Qgate);ID=5.1Apulsed;parameter:VDD Final Data Sheet 40 VBR(DSS)=f(Tj);ID=0.25mA 10 Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA Avalancheenergy Typ.capacitances 104 250 Ciss Coss 200 Crss 103 C[pF] EAS[mJ] 150 102 100 101 50 0 25 75 100 125 0 100 200 Tj[°C] 300 400 500 600 VDS[V] EAS=f(Tj);ID=1.8A;VDD=50V C=f(VDS);VGS=0V;f=1MHz Typ.Cossstoredenergy 6 5 Eoss[µJ] 4 3 2 1 0 0 100 200 300 400 500 600 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 12 ID VDS Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 13 Rev.2.1,2015-02-11 650VCoolMOS™CFDAPowerTransistor IPD65R420CFDA RevisionHistory IPD65R420CFDA Revision:2015-02-11,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-07-12 Preliminary 2.1 2015-02-11 Correction of Marking Code DisclaimerATV WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Edition2011-09-30 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/orany informationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilities ofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirementscomponentsmaycontaindangeroussubstances.Forinformationonthetypesinquestionplease contactyournearestInfineonTechnologiesOffice. InfineonTechnologiesComponentsmayonlybeusedinlife-supportdevicesorsystemswiththeexpresswrittenapprovalof InfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support deviceorsystem,ortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintended tobeimplantedinthehumanbody,ortosupportand/ormaintainandsustainand/orprotecthumanlife. Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.1,2015-02-11