MO SF ET
Metall Oxide Semiconductor Field Effect Transistor
Cool MO S E6
650V CoolMOSTM E6 Power Transistor
IPx65R600E6
Data Sheet
Rev. 2.4
Final
Po wer Ma nage ment & Multi mark et
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Description
1
TM
CoolMOS is a revolutionary technology for high voltage power MOSFETs,
designed according to the superjunction (SJ) principle and pioneered by
TM
Infineon Technologies. CoolMOS DE series combines the experience of the
leading SJ MOSFET supplier with high class innovation. The resulting devices
provide all benefits of a fast switching SJ MOSFET while not sacrificing ease
of use. Extremely low switching and conduction losses make
switching applications even more efficient, more compact, lighter, and
cooler.
Features
Extremely low losses due to very low FoM Rdson*Q g and Eoss
Very high commutation ruggedness
Easy to use/drive, Pb-free plating, Halogen free mold compound
Fully qualified according to JEDEC for Industrial Applications
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages
e.g. PC Silverbox, Adapter, LCD & PDP TV, Lightning, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use o ferrite beads on the gate or
separate totem poles is generally recommended.
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDS @Tj max
700
V
RDS(on), max
0.6
Ω
QG, typ
23
nC
ID, pulse
18
A
Eoss @ 400V
2
µJ
Body diode di/dt
500
A/µs
Type / Ordering Code
IPD65R600E6
IPP65R600E6
IPA65R600E6
Rev. 2.4
Package
PG-TO252
PG-TO220
PG-TO220 FullPAK
Marking
65E6600
Page 2
Related links
IFX CoolMOS Webpage
IFX Design tools
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table of Contents
1
Description .......................................................................................................................................... 2
2
Maximum ratings ................................................................................................................................ 4
3
Thermal characteristics ..................................................................................................................... 5
4
Electrical characteristics ................................................................................................................... 5
5
Electrical characteristics diagrams .................................................................................................. 8
6
Test circuits ...................................................................................................................................... 13
7
Package outlines .............................................................................................................................. 14
8
Revision History ............................................................................................................................... 17
Rev. 2.4
Page 3
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Maximum ratings
2
At Tj = 25 °C, unless otherwise specified.
Table 2
Parameter
Maximum ratings
Symbol
Values
Min.
Note/Test Condition
–
–
Max.
7.3
–
–
4.6
TC = 100°C
ID, pulse
–
–
18
Averlanche energy, single pulse
EAS
–
–
142
TC = 25°C
ID = 1.3A; VDD = 50V;
TC = 25°C
(see Table 21)
Averlanche energy, repetitive
EAR
–
–
0.21
Avalanche current, repetitive
IAR
–
–
1.3
A
dv/dt
–
–
50
V/ns
VDS=0…480 V
-20
–
20
V
static
Continuous drain current
Pulsed drain current
1)
2)
MOSFET dv/dt ruggedness
Gate source voltage
ID
VGS
Typ.
Unit
A
mJ
ID=1.3 A, VDD=50V
30
-30
TC = 25°C
AC (f >1 Hz)
Power dissipation for
Non FullPAK
Ptot
–
–
63
W
TC = 25°C
Power dissipation for
FullPAK
Ptot
–
–
28
W
TC = 25°C
Operating and storage temperature
Tj, Tstg
-55
–
150
°C
Mounting torque
TO-220
–
–
60
Ncm
Mounting torque
TO-220 FullPAK
–
–
50
IS
–
–
6.3
A
TC = 25°C
IS, pulsed
–
–
18
A
TC = 25°C
dv/dt
–
–
15
V/ns
500
A/µs
VDS=0…480 V, ISD ≤ ID,
TC = 125°C
(see table 22)
Continous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
Maxumum diode commutation
3)
speed
1)
dif/dt
M3 and M3.5 screws
M2.5 Screws
Limited by Tj, max. Maximum duty cycle D=0.75
2)
Pulse width tp limited by Tj, max
3)
Identical low side and high side switch with identical RG
Rev. 2.4
Page 4
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Thermal characteristics
3
Table 3
Parameter
Thermal characteristics TO-220 (IPP65R600E6)
Symbol
Values
Min.
Typ.
Unit
Max.
2.0
Thermal resistance, junction-case
RthJC
–
–
Thermal resistance, junctionambient
RthJA
–
–
62
Tsold
Soldering temperature,
wavesoldering only allowed at leads
–
–
260
Table 4
Parameter
Thermal characteristics TO-220 FullPAK (IPA65R600E6)
Symbol
Values
Min.
Typ.
Max.
4.5
Thermal resistance, junction-case
RthJC
–
–
Thermal resistance, junctionambient
RthJA
–
–
80
Tsold
Soldering temperature,
wavesoldering only allowed at leads
–
–
260
Table 5
Parameter
Thermal characteristics TO-252 (IPD65R600E6)
Symbol
Values
Min.
Thermal resistance, junction-case
Thermal resistance, junction-ambient
Typ.
RthJC
–
–
RthJA
–
–
°C/W
leaded
°C
Unit
62
1)
Tsold
–
–
Note/Test Condition
leaded
°C
1.6mm (0.063 in.) from
case for 10 s
Note/Test Condition
°C/W
SMD version, device on
PCB, minimal footprint
35
Soldering temperature,
wave- &reflowsoldering only allowed
1.6mm (0.063 in.) from
case for 10 s
°C/W
Unit
Max.
2.0
Note/Test Condition
SMD version, device on
2
1)
PCB, 6cm cooling area
260
°C
Reflow MSL1
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical
without air stream cooling.
Rev. 2.4
Page 5
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Electrical characteristics
4
Electrical characteristics, at Tj=25°C, unless otherwise specified
Table 6
Parameter
Static characteristics
Symbol
Drain-source Breakdown voltage
Gate threshold voltage
Values
Unit
V(BR)DSS
Min.
650
Typ.
–
–
VGS(th)
2.5
3
3.5
–
–
1
V
µA
IDSS
–
10
–
Gate- source leakage current
IGSS
–
–
100
nA
–
0.54
0.6
Ω
Drain- source on- state resistance
RDS(on)
–
1.40
–
Gate resistance
RG
–
10.5
–
Dynamic characteristics
Symbol
Ω
Values
Min.
VGS= 0V, ID= 1.0mA
VDS= VGS, ID= 0.21mA
Zero gate Voltage drain current
Table7
Parameter
Note/Test Condition
Max.
Unit
VDS=600 V, VGS=0V,
Tj=25°C
VDS=600 V, VGS=0V,
Tj=150°C
VGS= 20V, VDS= 0V
VGS= 10V, ID=2.1A,
Tj= 25°C
VGS= 10V, ID=2.1A,
Tj= 150°C
f= 1MHz, open drain
Note/Test Condition
Typ.
440
–
30
–
–
21
–
VGS= 0V,
VDS=0…480V
Co(tr)
–
88
–
Turn- on delay time
td(on)
–
10
–
ID= const
VGS= 0V, VDS=0…480 V
Rise time
tr
–
8
–
Turn- off delay time
td(off)
–
64
–
tf
–
11
–
Input capacitance
Ciss
Output capacitance
Coss
–
–
Effective output capacitance,
1)
energy related
Co(er)
Effective output capacitance,
2)
time related
Fall time
Max.
pF
ns
VGS= 0V, VDS= 100V,
f= 1MHz
VDD=400 V
VGS=13 V, ID=3.2A,
RG= 6.8 Ω
(see table 20)
1)
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
2)
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Rev. 2.4
Page 6
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 8
Parameter
Gate charge characteristics
Symbol
Values
Min.
Typ.
2.75
–
12
–
Gate to drain charge
QGD
–
–
Gate charge, total
QG
–
23
Gate plateau voltage
Vplateau
–
5.5
Gate to source charge
Table 8
Parameter
QGS
Reverse diode characteristics
Symbol
Unit
Max.
nC
–
VDD= 480V, ID= 3.2A,
VGS=0 to 10 V
V
Values
Min.
Note/Test Condition
Unit
Note/Test Condition
Diode forward voltage
VSD
–
Typ.
0.9
–
V
VGS=0V, IF=3.2A,
Tj=25°C
Reverse recovery time
trr
–
270
–
ns
Reverse recovery charge
Qrr
–
2.0
–
nC
Peak reverse recovery current
Irrm
–
13
–
A
VR=400 V, IF=3.2A,
diF/dt=100 A/µs
(see table 22)
Rev. 2.4
Page 7
Max.
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
5
Electrical characteristics diagrams
Table 10
Power dissipation
Non FullPAK
Power dissipation
FULLPAK
Ptot = f(TC)
Ptot = f(TC)
Table 11
Max. transient thermal impedance
Non FullPAK
Max. transient thermal impedance
Non FullPAK
Z(thJC)=f(tp); parameter: D=tp/T
Z(thJC)=f(tp); parameter: D=tp/T
Rev. 2.4
Page 8
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 12
Safe operating area TC=25°C
Non FullPAK
Safe operating area TC=25°C
FullPAK
ID=f(VDS); TC=25°C; VGS > 7V; D=0; parameter tp
ID=f(VDS); TC=25°C; VGS > 7V; D=0; parameter tp
Table 13
Safe operating area TC=80°C
Non FullPAK
Safe operating area TC=80°C
FullPAK
ID=f(VDS); TC=80°C; VGS > 7V; D=0; parameter tp
ID=f(VDS); TC=80°C; VGS > 7V; D=0; parameter tp
Rev. 2.4
Page 9
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 14
Typ. output characteristics TC=25°C
Typ. output characteristics TC=125°C
ID=f(VDS); Tj=25°C; parameter: VGS
ID=f(VDS); Tj=125°C; parameter: VGS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)= f(Tj); ID=4.9A; VGS=10V
Rev. 2.4
Page 10
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 16
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
VGS=f(Qgate), ID=4.9 A pulsed
Table 17
Avalanche energy
Drain-source breakdown voltage
EAS=f(Tj); ID=1.8 A; VDD=50 V
VBR(DSS)=f(Tj); ID=1.0 mA
Rev. 2.4
Page 11
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Table 18
Typ. capacitances
Typ. COSS stored energy
C=f(VDS); VGS= 0 V; f=1 MHz
EOSS=f(VDS)
Table 19
Forward characteristics of reverse diode
IF= ƒ(VSD); parameter: Tj
Rev. 2.4
Page 12
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
6
Table 20
Test circuits
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
tf
td(off)
ton
tr
toff
Table 21
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VD
VDS
VDS
ID
Table 22
Test circuit for diode characteristics
Rev. 2.4
Diode recovery waveform
Page 13
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
7
Package outlines
DIMENSION
A
A1
b
b2
b3
c
c2
D
D1
E
E1
e
e1
N
H
L
L3
L4
MILLIMETERS
MAX.
MIN.
2.41
2.16
0.15
0.00
0.89
0.64
1.15
0.65
5.50
4,95
0.61
0.46
0.98
0.40
5.97
6.22
5.02
5.84
6.35
6.73
4.32
5.50
2.29
4.57
3
9.40
10.48
1.18
1.78
0.89
1.27
0.51
1.02
DOCUMENT NO.
Z8B00003328
REVISION
07
SCALE:
10:1
0
1
2mm
EUROPEAN PROJECTION
ISSUE DATE
01.04.2020
Figure 1 Outlines TO-252, dimensions in mm
Rev. 2.4
Page 14
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
Figure 2 Outlines TO220, dimensions in mm/inches
Rev. 2.4
Page 15
2020-05-20
650V CoolMOSTM E6 Power Transistor
IPD65R600E6, IPP65R600E6
IPA65R600E6
1
2
3
DIMENSIONS
A
A1
A2
b
b1
b2
b3
b4
c
D
D1
E
e
H
L
L1
øP
Q
MILLIMETERS
MIN.
MAX.
4.50
4.90
2.34
2.85
2.86
2.42
0.65
0.90
0.95
1.38
1.51
0.95
0.65
1.38
0.65
1.51
0.40
0.63
16.15
15.67
8.97
9.83
10.00
10.65
2.54
29.75
28.70
12.78
13.75
2.83
3.45
3.00
3.30
3.50
3.15
DOCUMENT NO.
Z8B00003319
REVISION
07
SCALE 5:1
0
1
2
3
4
5mm
EUROPEAN PROJECTION
ISSUE DATE
27.01.2017
Figure 3 Outlines TO220 FullPAK, dimensions in mm
Rev. 2.4
Page 16
2020-05-20
650VCoolMOSªE6PowerTransistor
IPx65R600E6
RevisionHistory
IPx65R600E6
Revision:2020-05-20,Rev.2.4
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.2
2016-08-04
Revised TO220 Full PAK package drawing on page 16
2.3
2018-03-04
Outline PG-TO-220 FullPAK update
2.4
2020-05-20
Update of the package outlines TO-252
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2020InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe
productofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s
technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct
informationgiveninthisdocumentwithrespecttosuchapplication.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
17
Rev.2.4,2020-05-20