IPD65R660CFDAATMA1

IPD65R660CFDA MOSFET 650VCoolMOSªCFDAPowerTransistor DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseries combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Theresultingdevicesprovideallbenefitsofafast switchingSJMOSFETwhileofferinganextremelyfastandrobustbody diode.Thiscombinationofextremelylowswitching,commutationand conductionlossestogetherwithhighestrobustnessmakeespecially resonantswitchingapplicationsmorereliable,moreefficient,lighter,and cooler. tab 1 2 3 Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Easytouse/drive •QualifiedaccordingtoAECQ101 •Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformold compound Drain Pin 2 Gate Pin 1 Source Pin 3 Applications 650VCoolMOS™CFDAisdesignedforswitchingapplications. Table1KeyPerformanceParameters Parameter Value Unit VDS 650 V RDS(on),max 0.66 Ω Qg,typ 20 nC ID,pulse 17 A Eoss @ 400V 1.8 µJ Body diode di/dt 900 A/µs Qrr 0.2 µC trr 65 ns Irrm 4.5 A Type/OrderingCode Package Marking RelatedLinks IPD65R660CFDA PG-TO 252 65F660A - Final Data Sheet 1 Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Values Min. Typ. Max. 6 Unit Note/TestCondition A TC=25°C TC=100°C 3.8 Pulsed drain current2) ID‚pulse 17 A TC=25°C Avalanche energy, single pulse EAS 115 mJ ID=1.2A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.21 mJ ID=1.2A,VDD=50V Avalanche current, repetitive IAR 1.2 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V Gate source voltage VGS -20 20 V static -30 30 Power dissipation (SMD) DPAK Ptot Operating and storage temperature Tj‚Tstg Continuous diode forward current AC (f > 1 Hz) TC=25°C 62.5 W 150 °C IS 6 A TC=25°C Diode pulse current IS‚pulse 17 A TC=25°C Reverse diode dv/dt3) dv/dt 50 V/ns Maximum diode commutation speed dif/dt 900 -40 VDS=0...400V,ISD≤ID, Tj=25°C A/µs (see table 8) 1) Limited by Tj max. Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 3 Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA 2Thermalcharacteristics Table3ThermalcharacteristicsDPAK Parameter Symbol Thermal resistance, junction - case RthJC Values Min. Typ. Thermal resistance, junction - ambient1) RthJA Max. Unit 2 K/W 62 K/W Tsold SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm² cooling area 35 Soldering temperature, wave- & reflowsoldering allowed Note/TestCondition 260 °C reflow MSL 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 4 Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Parameter Symbol Drain-source breakdown voltage1) V(BR)DSS 650 Gate threshold voltage VGS(th) 3.5 Zero gate voltage drain current IDSS Min. Typ. 4 Unit Note/TestCondition V VGS=0V,ID=1mA 4.5 V VDS=VGS,ID=0.2mA 1 µA VDS=650V,VGS=0V,Tj=25°C Max. VDS=650V,VGS=0V,Tj=150°C 100 Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) 0.594 100 nA VGS=20V,VDS=0V 0.66 Ω VGS=10V,ID=3.2A,Tj=25°C VGS=10V,ID=3.2A,Tj=150°C 1.54 Gate resistance RG 6.5 Ω f=1MHz,opendrain Unit Note/TestCondition VGS=0V,VDS=100V,f=1MHz Table5Dynamiccharacteristics Values Parameter Symbol Input capacitance Ciss 543 pF Output capacitance Coss 32 pF Effective output capacitance, energy related2) Co(er) 24 pF VGS=0V,VDS=0...400V Effective output capacitance, time related3) Co(tr) 97 pF ID=constant,VGS=0V, VDS=0...400V Turn-on delay time td(on) 9 ns Rise time tr 8 ns Turn-off delay time td(off) 40 ns Fall time tf 10 ns Min. Typ. Max. VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω (see table 9) Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Qgs Gate to drain charge Values Unit Note/TestCondition 3.5 nC Qgd 11 nC VDD=480V,ID=3.2A, VGS=0to10V Gate charge total Qg 20 nC Gate plateau voltage Vplateau 6.4 V Min. Typ. Max. 1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to evaluate the impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales office. 2) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V 3) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V Final Data Sheet 5 Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage VSD Reverse recovery time Values Unit Note/TestCondition 0.9 V VGS=0V,IF=3.2A,Tj=25°C trr 65 ns Reverse recovery charge Qrr 0.2 µC VR=400V,IF=3.2A, diF/dt=100A/µs (see table 8) Peak reverse recovery current Irrm 4.5 A Final Data Sheet Min. 6 Typ. Max. Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA 4Electricalcharacteristicsdiagrams Max.transientthermalimpedance Typ.outputcharacteristics 1 10 20 20 V 18 10 V 16 8V 7V 14 0 10 ZthJC[K/W] 6V ID[A] 0.5 0.2 0.1 10-1 12 5.5 V 10 5V 4.5 V 8 0.05 6 0.02 10-2 10-5 10-4 10-3 0.01 4 single pulse 2 10-2 0 10-1 0 5 10 tp[s] 15 20 VDS[V] ZthJC=f(tP);parameter:D=tp/T ID=f(VDS);Tj=25°C;parameter:VGS Typ.outputcharacteristics Typ.drain-sourceon-stateresistance 20 3.0 20 V 18 10 V 16 8V 2.5 7V 14 5V 5.5 V 7V 12 5.5 V 10 5V RDS(on)[Ω] ID[A] 6V 4.5 V 8 2.0 6V 6.5 V 10 V 6 1.5 4 2 0 0 5 10 15 20 VDS[V] 0 2 4 6 8 10 ID[A] ID=f(VDS);Tj=125°C;parameter:VGS Final Data Sheet 1.0 RDS(on)=f(ID);Tj=125°C;parameter:VGS 7 Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA Powerdissipation Diagram18:Safeoperatingarea 102 80 70 60 1 µs 10 1 10 µs 100 µs ID[A] Ptot[W] 50 40 1 ms 10 ms 30 100 20 10 0 0 50 100 10-1 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;forVgs>7.5V;parameter:tp Diagram7:Safeoperatingarea Typ.drain-sourceon-stateresistance 2 10 2.0 1.5 1 µs 101 RDS(on)[mΩ] 10 µs ID[A] 100 µs 10 ms 1 ms 1.0 100 typ 0.5 10-1 100 101 102 103 0.0 -60 -20 20 VDS[V] ID=f(VDS);TC=80°C;D=0;forVgs>7.5V;parameter:D=tp/T Final Data Sheet 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=3.2A;VGS=10V 8 Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA Typ.transfercharacteristics Typ.forwardcharacteristicsofreversediode 102 18 16 150 °C 125 °C 25 °C 25 °C 14 101 10 IF[A] ID[A] 12 8 100 6 4 2 0 0 2 4 6 8 10-1 10 0.0 0.5 1.0 VGS[V] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj IF=f(VSD);parameter:Tj Typ.gatecharge Avalancheenergy 10 2.0 2.5 100 125 150 1200 1100 9 1000 8 7 120 V 900 480 V 800 EAS[mJ] 6 VGS[V] 1.5 VSD[V] 5 4 700 600 500 400 3 300 2 200 1 0 100 0 5 10 15 20 25 0 25 50 Qgate[nC] Tj[°C] VGS=f(Qgate);ID=19.2Apulsed;parameter:VDD Final Data Sheet 75 EAS=f(Tj);ID=6.6A;VDD=50V 9 Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA Drain-sourcebreakdownvoltage Typ.capacitances 105 760 Ciss 740 Coss 720 Crss 104 700 103 660 C[pF] VBR(DSS)[V] 680 640 102 620 600 101 580 560 540 -40 0 40 80 120 160 100 0 100 200 Tj[°C] 300 400 500 600 VDS[V] VBR(DSS)=f(Tj);ID=0.25mA C=f(VDS);VGS=0V;f=1MHz Typ.Cossstoredenergy 4 Eoss[µJ] 3 2 1 0 0 100 200 300 400 500 600 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA 6PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 12 Rev.2.2,2016-04-18 650VCoolMOSªCFDAPowerTransistor IPD65R660CFDA RevisionHistory IPD65R660CFDA Revision:2016-04-18,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-07-12 Preliminary 2.1 2014-11-19 Correction of Marking Code 2.2 2016-04-18 Updated: SOA diagrams, Idss at 150C, Rdson vs. Tj. 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Warnings Duetotechnicalrequirementscomponentsmaycontaindangeroussubstances.Forinformationonthetypesinquestionplease contactyournearestInfineonTechnologiesOffice. InfineonTechnologiesComponentsmayonlybeusedinlife-supportdevicesorsystemswiththeexpresswrittenapprovalof InfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support deviceorsystem,ortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintended tobeimplantedinthehumanbody,ortosupportand/ormaintainandsustainand/orprotecthumanlife. Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.2,2016-04-18