IPD90N10S4L-06

IPD90N10S4L-06 OptiMOSTM-T2 Power-Transistor Product Summary V DS 100 V R DS(on),max 6.6 mW ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified TAB • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 3 • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N10S4L-06 PG-TO252-3-313 4N10L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25°C, V GS=10V 90 T C=100°C, V GS=10V1) 69 Unit A Pulsed drain current2) I D,pulse T C=25°C 360 Avalanche energy, single pulse2) E AS I D=45A 250 mJ Avalanche current, single pulse I AS - 70 A Gate source voltage V GS - +/-16 V Power dissipation P tot T C=25°C 136 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2011-11-30 IPD90N10S4L-06 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 1.1 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=90µA 1.1 1.6 2.1 Zero gate voltage drain current I DSS V DS=100V, V GS=0V - 0.01 1 T j=125°C2) - 1 100 V DS=100V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=45A - 6.9 8.1 mW V GS=10 V, I D=90 A - 5.8 6.6 Rev. 1.0 page 2 2011-11-30 IPD90N10S4L-06 Parameter Symbol Values Conditions Unit min. typ. max. - 4804 6250 - 1620 2110 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 147 300 Turn-on delay time t d(on) - 8 - Rise time tr - 6 - Turn-off delay time t d(off) - 42 - Fall time tf - 40 - Gate to source charge Q gs - 16 21 Gate to drain charge Q gd - 17 34 Gate charge total Qg - 75 98 Gate plateau voltage V plateau - 3.4 - V - - 90 A - - 360 V GS=0 V, V DS=25 V, f =1 MHz V DD=50V, V GS=10V, I D=90A, R G=3.5W pF ns Gate Charge Characteristics2) V DD=80V, I D=90A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=90A, T j=25°C - 1.0 1.3 V Reverse recovery time2) t rr V R=50V, I F=50A, di F/dt =100A/µs - 60 - ns Reverse recovery charge2) Q rr - 100 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry 98A at 25°C. 1) Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2011-11-30 IPD90N10S4L-06 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 160 100 140 80 120 60 I D [A] P tot [W] 100 80 40 60 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 101 1000 1 µs 10 µs 100 100 0.5 Z thJC [K/W] I D [A] 100 µs 10 1 ms 10-1 0.1 0.05 0.01 10-2 1 single pulse 10-3 0.1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2011-11-30 IPD90N10S4L-06 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 360 15 10 V 5V 3.5 V 4.5 V 4V 320 4.5 V 13 280 11 200 R DS(on) [mW] I D [A] 240 4V 160 120 9 5V 7 3.5 V 80 10 V 5 40 0 3 0 1 2 3 4 0 90 180 V DS [V] 270 360 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 90 A; V GS = 10 V parameter: T j 360 14 12 270 R DS(on) [mW] I D [A] 10 180 8 6 90 175 °C 4 25 °C -55 °C 0 1 2 3 4 5 V GS [V] Rev. 1.0 2 -60 -20 20 60 100 140 180 T j [°C] page 5 2011-11-30 IPD90N10S4L-06 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 2.5 Ciss 2 C [pF] Coss V GS(th) [V] 900 µA 1.5 103 90 µA 1 Crss 102 0.5 101 0 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 103 100 102 I F [A] I AV [A] 100 °C 175 °C 175 °C 25 °C 150 °C 10 25 °C 1 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 0.1 1 10 100 1000 t AV [µs] page 6 2011-11-30 IPD90N10S4L-06 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); I D = 45A V BR(DSS) = f(T j); I D = 1 mA 110 300 108 250 106 200 V BR(DSS) [V] E AS [mJ] 104 150 102 100 100 98 50 96 94 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 90 A pulsed parameter: V DD 10 V GS Qg 8 80 V 20 V V GS [V] 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 20 40 60 Q gate Q gd 80 Q gate [nC] Rev. 1.0 page 7 2011-11-30 IPD90N10S4L-06 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2011 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2011-11-30 IPD90N10S4L-06 Revision History Version Date Changes Revision 1.0 29.11.2011 Final Data Sheet Rev. 1.0 page 9 2011-11-30