IPDD60R080G7XTMA1

IPDD60R080G7 MOSFET 600VCoolMOS™G7SJPowerDevice PG-HDSOP-10-1 TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand theimprovedthermalpropertiesoftheDDPAKpackagetoenablea possibleSMDsolutionforhighcurrenttopologiessuchasPFCupto3kW. 10 6 tab Pin 1 5 Features •C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg. •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint. •DDPAKpackagehasinbuilt4thpinKelvinSourceconfigurationandlow parasiticsourceinductance(~3nH). •DDPAKpackageisMSL1compliant,totalPb-freeandhaseasyvisual inspectionleads. •DDPAKSMDpackagecombinedwithleadfreedieattachprocess enablesimprovedthermalperformance(Rth). Drain Pin 6-10, Tab *1 Gate Pin 1 Driver Source Pin 2 Benefits •C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling fasterswitchingleadingtohigherefficiency. •PossibilitytoincreasseeconomiesofscalesbyusageinPFCandPWM topologiesintheapplication. •C7Goldcanreach50mΩinDDPAK115mm2footprint,whereasprevious BICC7600Vwas40mΩin150mm2D2PAKfootprint. •ReducingparasiticsourceinductancebyKelvinSourceimproves efficiencybyfasterswitchingandeaseofuseduetolessringing. •DDPAKpackageiseasytouseandhasthehighestqualitystandards. •ImprovedthermalsenableSMDDDPAKpackagetobeusedinhigher currentdesignsthanhasbeenpreviouslypossible. *1: Internal body diode Power Source Pin 3,4,5 Potentialapplications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS@Tj,max 650 V RDS(on),max 80 mΩ Qg,typ 42 nC ID,pulse 83 A ID,continuous @ Tj1 Hz) Power dissipation Ptot - - 174 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - n.a. Ncm - IS - - 29 A TC=25°C Diode pulse current IS,pulse - - 83 A TC=25°C Reverse diode dv/dt3) dv/dt - - 25 V/ns VDS=0...400V,ISD